Overview
The 2N3055H is a Silicon NPN power transistor produced by onsemi, designed for high-power applications. It is mounted in a Jedec TO-3 metal case, making it suitable for various power switching and linear applications. This transistor is known for its high power dissipation capability and excellent safe operating area, particularly at higher collector-emitter voltages.
Key Specifications
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | V |
| Collector-Base Voltage | VCBO | 100 | V |
| Emitter-Base Voltage | VEBO | 7.0 | V |
| Collector Current - Continuous | IC | 15 | A |
| Base Current | IB | 7.0 | A |
| Total Power Dissipation at TC = 25°C | PD | 115 | W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -65 to +200 | °C |
| Thermal Resistance Junction to Case | Rθjc | 1.52 | °C/W |
| DC Current Gain (hFE) at IC = 4A | hFE | 20 | - |
| Collector-Emitter Saturation Voltage at IC = 4A | VCE(sat) | 1.1 | V |
Key Features
- Higher safe operating area compared to the 2N3055, especially at VCE > 40V.
- Low collector-emitter saturation voltage.
- High power dissipation capability.
- Excellent for power switching circuits such as converters or inverters.
- Suitable for high power audio, series-pass power supplies, and disk-head positioners.
- Pb-free packages available.
- DC current gain (hFE) up to 70.
Applications
- Power switching circuits, such as converters or inverters.
- High power audio applications.
- Series-pass power supplies.
- Disk-head positioners.
- Output stages and high fidelity amplifiers.
- General-purpose switching and amplifier applications.
Q & A
- What is the maximum collector-emitter voltage of the 2N3055H transistor?
The maximum collector-emitter voltage (VCEO) is 60V.
- What is the maximum continuous collector current of the 2N3055H transistor?
The maximum continuous collector current (IC) is 15A.
- What is the total power dissipation of the 2N3055H transistor at 25°C?
The total power dissipation (PD) at 25°C is 115W.
- What is the operating and storage junction temperature range of the 2N3055H transistor?
The operating and storage junction temperature range (TJ, TSTG) is -65°C to +200°C.
- What is the thermal resistance junction to case of the 2N3055H transistor?
The thermal resistance junction to case (Rθjc) is 1.52°C/W.
- What is the DC current gain (hFE) of the 2N3055H transistor at IC = 4A?
The DC current gain (hFE) at IC = 4A is a minimum of 20.
- What is the collector-emitter saturation voltage of the 2N3055H transistor at IC = 4A?
The collector-emitter saturation voltage (VCE(sat)) at IC = 4A is a maximum of 1.1V.
- In what package type is the 2N3055H transistor available?
The 2N3055H transistor is available in a Jedec TO-3 metal case.
- What are some typical applications of the 2N3055H transistor?
Typical applications include power switching circuits, high power audio, series-pass power supplies, and disk-head positioners.
- Is the 2N3055H transistor Pb-free?
