Overview
The 2N3055HG is a silicon epitaxial-base planar NPN power transistor manufactured by ON Semiconductor. It is housed in a Jedec TO-3 metal case, making it suitable for high-power applications. This transistor is designed for general-purpose switching and amplifier applications, including power switching circuits, series and shunt regulators, output stages, and high fidelity amplifiers. The 2N3055HG has a complementary PNP type, the MJ2955, which can be used in similar applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Emitter Voltage (with resistance between base and emitter) | VCER | 70 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 7 | Vdc |
| Collector Current - Continuous | IC | 15 | A dc |
| Base Current | IB | 7 | A dc |
| Total Power Dissipation @ TC = 25°C | PD | 115 | W |
| Operating and Storage Junction Temperature Range | TJ | -65°C to +200°C | |
| DC Current Gain (hFE) | hFE | 20-70 @ IC = 4 A dc | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.1 V dc (Max) @ IC = 4 A dc |
Key Features
- Medium power transistor
- Excellent safe operating area
- Complementary NPN-PNP transistors (2N3055 and MJ2955)
- Low collector-emitter saturation voltage (VCE(sat) = 1.1 V dc Max @ IC = 4 A dc)
- Pb-free packages are available
- DC current gain (hFE) up to 70
- Improved linearity of hFE
Applications
The 2N3055HG is versatile and can be used in various applications, including:
- Power switching circuits
- Series and shunt regulators
- Output stages
- High fidelity amplifiers
Q & A
- What is the maximum collector-emitter voltage of the 2N3055HG?
The maximum collector-emitter voltage (VCEO) is 60 V dc.
- What is the maximum collector current of the 2N3055HG?
The maximum collector current (IC) is 15 A dc.
- What is the operating temperature range of the 2N3055HG?
The operating and storage junction temperature range is -65°C to +200°C.
- What is the total power dissipation of the 2N3055HG at TC = 25°C?
The total power dissipation (PD) at TC = 25°C is 115 W.
- What is the DC current gain (hFE) of the 2N3055HG?
The DC current gain (hFE) is between 20 and 70 at IC = 4 A dc.
- What is the collector-emitter saturation voltage of the 2N3055HG?
The collector-emitter saturation voltage (VCE(sat)) is 1.1 V dc Max at IC = 4 A dc.
- Is the 2N3055HG available in Pb-free packages?
- What are some common applications of the 2N3055HG?
- What is the complementary PNP transistor to the 2N3055HG?
The complementary PNP transistor is the MJ2955.
- What is the maximum base current of the 2N3055HG?
The maximum base current (IB) is 7 A dc.
