2N3055AG
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onsemi 2N3055AG

Manufacturer No:
2N3055AG
Manufacturer:
onsemi
Package:
Tray
Description:
TRANS NPN 60V 15A TO204
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N3055AG is a high-power NPN silicon transistor manufactured by onsemi. It is part of the PowerBase complementary transistor series, designed for various high-power applications. This transistor is housed in a TO-3 metal case and is known for its excellent safe operating area and high current gain-bandwidth product. The 2N3055AG is often used in conjunction with its PNP counterpart, the MJ2955, to provide a balanced performance in a wide range of electronic circuits.

Key Specifications

ParameterValueUnit
Maximum Collector Power Dissipation (Pc)115W
Maximum Collector-Base Voltage (Vcb)100V
Maximum Collector-Emitter Voltage (Vce)60V
Maximum Emitter-Base Voltage (Veb)7V
Maximum Collector Current (Ic max)15A
Max. Operating Junction Temperature (Tj)200°C
Transition Frequency (ft)0.8MHz
Collector Capacitance (Cc)60pF
Forward Current Transfer Ratio (hFE), MIN10
Collector-Emitter Saturation Voltage (VCE(sat))1.1Vdc
PackageTO-3

Key Features

  • High current gain-bandwidth product
  • Excellent safe operating area
  • Low collector-emitter saturation voltage (VCE(sat) = 1.1 V)
  • Pb-free packages available and RoHS compliant
  • DC current gain (hFE) up to 70
  • Improved linearity in hFE
  • Maximum voltage across collector and emitter: 60V DC
  • Maximum current allowed through collector: 15A DC
  • Operating temperature range: -65°C to +200°C

Applications

The 2N3055AG transistor is designed for high-power applications such as:

  • High power audio amplifiers
  • Stepping motor control
  • Power switching circuits (e.g., relay or solenoid drivers)
  • DC-to-DC converters
  • Inverters
  • Inductive loads requiring higher safe operating area

Q & A

  1. What is the maximum collector power dissipation of the 2N3055AG transistor?
    The maximum collector power dissipation is 115 W.
  2. What is the maximum collector-emitter voltage of the 2N3055AG transistor?
    The maximum collector-emitter voltage is 60 V.
  3. What is the maximum collector current of the 2N3055AG transistor?
    The maximum collector current is 15 A.
  4. What is the operating junction temperature range of the 2N3055AG transistor?
    The operating junction temperature range is -65°C to +200°C.
  5. What is the transition frequency (ft) of the 2N3055AG transistor?
    The transition frequency is 0.8 MHz.
  6. What are the typical applications of the 2N3055AG transistor?
    The 2N3055AG is used in high power audio, stepping motor control, power switching circuits, DC-to-DC converters, and inverters.
  7. Is the 2N3055AG transistor Pb-free and RoHS compliant?
    Yes, the 2N3055AG transistor is Pb-free and RoHS compliant.
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the 2N3055AG transistor?
    The collector-emitter saturation voltage is 1.1 V.
  9. What is the package type of the 2N3055AG transistor?
    The package type is TO-3.
  10. What is the complementary PNP type of the 2N3055AG transistor?
    The complementary PNP type is MJ2955.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):15 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:5V @ 7A, 15A
Current - Collector Cutoff (Max):700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 4A, 2V
Power - Max:115 W
Frequency - Transition:6MHz
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-204AA, TO-3
Supplier Device Package:TO-204 (TO-3)
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Same Series
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Similar Products

Part Number 2N3055AG 2N3055G 2N3055HG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 15 A 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 5V @ 7A, 15A 3V @ 3.3A, 10A 3V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 4A, 2V 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 115 W 115 W 115 W
Frequency - Transition 6MHz 2.5MHz 2.5MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3)

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