Overview
The MJE172 is a PNP bipolar power transistor manufactured by NTE Electronics, Inc. This transistor is part of the MJE170/180 series, which is designed for low power audio amplifier and low current, high speed switching applications. The MJE172 is a complementary device to the NPN transistors in the same series, such as the MJE180, MJE181, and MJE182.
Key Specifications
| Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Collector-Emitter Voltage Breakdown (Vceo) | 80 V |
| Collector-Base Voltage Breakdown (Vcbo) | 100 V |
| Collector Current (Ic) (Max) | 3 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 600mA, 3A |
| Collector Cutoff Current (ICBO) (Max) | 100 nA |
| Power Dissipation (Ptot) (Max) | 12.5 W |
| Transition Frequency (ftotal) (Min) | 50 MHz |
| Operating Temperature | -65 ℃ ~ 150 ℃ (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
Key Features
- High Collector Current: The MJE172 can handle a maximum collector current of 3 A, making it suitable for applications requiring moderate to high current handling.
- High Voltage Ratings: With a collector-emitter voltage breakdown of 80 V and a collector-base voltage breakdown of 100 V, this transistor is robust against voltage spikes and surges.
- Low Vce Saturation: The transistor has a low Vce saturation voltage of 1.7 V at 600 mA and 3 A, which is beneficial for reducing power losses in switching applications.
- High Transition Frequency: The transition frequency of 50 MHz makes the MJE172 suitable for high-speed switching applications.
- Wide Operating Temperature Range: The transistor can operate over a temperature range of -65 ℃ to 150 ℃, making it versatile for various environmental conditions.
- Pb-Free and RoHS Compliant: The MJE172 is available in lead-free and RoHS compliant packages, ensuring compliance with environmental regulations.
Applications
- Low Power Audio Amplifiers: The MJE172 is designed for use in low power audio amplifier circuits where high fidelity and low distortion are required.
- High Speed Switching: Its high transition frequency and low Vce saturation make it suitable for high-speed switching applications, such as in power supplies and motor control circuits.
- General Purpose Amplification: The transistor can be used in various general-purpose amplification circuits where a PNP transistor with high current and voltage ratings is needed.
Q & A
- What is the maximum collector current of the MJE172 transistor?
The maximum collector current of the MJE172 transistor is 3 A.
- What is the collector-emitter voltage breakdown of the MJE172?
The collector-emitter voltage breakdown of the MJE172 is 80 V.
- What is the transition frequency of the MJE172 transistor?
The transition frequency of the MJE172 transistor is 50 MHz.
- Is the MJE172 transistor RoHS compliant?
- What are the typical applications of the MJE172 transistor?
The MJE172 transistor is typically used in low power audio amplifiers, high speed switching applications, and general purpose amplification circuits.
- What is the operating temperature range of the MJE172 transistor?
The operating temperature range of the MJE172 transistor is -65 ℃ to 150 ℃ (TJ).
- What is the Vce saturation voltage of the MJE172 transistor?
The Vce saturation voltage of the MJE172 transistor is 1.7 V at 600 mA and 3 A.
- What is the DC current gain (hFE) of the MJE172 transistor?
The DC current gain (hFE) of the MJE172 transistor is 50 @ 100mA, 1V.
- What is the power dissipation of the MJE172 transistor?
The power dissipation of the MJE172 transistor is 12.5 W.
- What package types are available for the MJE172 transistor?
The MJE172 transistor is available in TO-225AA and TO-126-3 packages.
