MJE172G
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onsemi MJE172G

Manufacturer No:
MJE172G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 80V 3A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE172G is a PNP complementary plastic silicon power transistor manufactured by onsemi. It is part of the MJE170/180 series, designed for low power audio amplifier and low current, high speed switching applications. This transistor is known for its high DC current gain and high current-gain-bandwidth product, making it suitable for a variety of electronic circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Base Voltage VCB 100 Vdc
Collector-Emitter Voltage VCEO 80 Vdc
Emitter-Base Voltage VEB 7.0 Vdc
Continuous Collector Current IC 3.0 Adc
Peak Collector Current ICM 6.0 Adc
Base Current IB 1.0 Adc
Total Power Dissipation @ TC = 25°C PD 12.5 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
Thermal Resistance, Junction-to-Case RJC 10 °C/W
Thermal Resistance, Junction-to-Ambient RJA 83.4 °C/W

Key Features

  • High DC Current Gain
  • High Current-Gain-Bandwidth Product
  • Annular Construction for Low Leakages
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • Pb-Free and RoHS Compliant

Applications

The MJE172G is suitable for various applications including:

  • Low power audio amplifiers
  • Low current, high speed switching circuits
  • General-purpose power amplification
  • Automotive and industrial control systems

Q & A

  1. What is the maximum collector-base voltage for the MJE172G?

    The maximum collector-base voltage (VCB) for the MJE172G is 100 Vdc.

  2. What is the continuous collector current rating for the MJE172G?

    The continuous collector current (IC) for the MJE172G is 3.0 Adc.

  3. Is the MJE172G Pb-Free and RoHS compliant?
  4. What is the thermal resistance, junction-to-case (RJC) for the MJE172G?

    The thermal resistance, junction-to-case (RJC) for the MJE172G is 10 °C/W.

  5. What are the typical applications for the MJE172G?

    The MJE172G is typically used in low power audio amplifiers, low current, high speed switching circuits, and general-purpose power amplification.

  6. What is the maximum operating and storage junction temperature range for the MJE172G?

    The operating and storage junction temperature range for the MJE172G is -65 to +150 °C.

  7. Does the MJE172G meet UL 94 V-0 standards?
  8. What is the package type for the MJE172G?

    The MJE172G is packaged in a TO-225 (Pb-Free) case.

  9. What is the DC current gain (hFE) for the MJE172G?

    The DC current gain (hFE) for the MJE172G is typically 50 at IC = 100 mAdc and VCE = 1.0 Vdc.

  10. What is the collector-emitter saturation voltage (VCE(sat)) for the MJE172G?

    The collector-emitter saturation voltage (VCE(sat)) for the MJE172G is typically 0.3 Vdc at IC = 500 mAdc and IB = 50 mAdc.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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In Stock

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Same Series
MJE172G
MJE172G
TRANS PNP 80V 3A TO126
MJE170G
MJE170G
TRANS PNP 40V 3A TO126
MJE171G
MJE171G
TRANS PNP 60V 3A TO126
MJE180G
MJE180G
TRANS NPN 40V 3A TO126
MJE181G
MJE181G
TRANS NPN 60V 3A TO126
MJE181
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MJE170
MJE170
TRANS PNP 40V 3A TO126
MJE171
MJE171
TRANS PNP 60V 3A TO126

Similar Products

Part Number MJE172G MJE182G MJE170G MJE171G MJE172
Manufacturer onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active
Transistor Type PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Frequency - Transition 50MHz 50MHz 50MHz 50MHz 50MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126

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