Overview
The MJE182G is an NPN bipolar power transistor from onsemi, part of the MJE180 series. This transistor is designed for low power audio amplifier and low current, high speed switching applications. It is a complementary device to the PNP transistors in the MJE170 series. The MJE182G is available in a Pb-free TO-225-3 package, making it suitable for a variety of electronic systems where reliability and performance are crucial.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | 80 | Vdc |
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Emitter-Base Voltage (VEB0) | 7 | V |
| Collector Current (IC) - DC | 3 | A |
| Collector Current (IC) - Pulse | 6 | A |
| Base Current (IB) | 1 | A |
| Collector Dissipation (PC) - TA=25°C | 1.5 | W |
| Collector Dissipation (PC) - TC=25°C | 12.5 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) - Min @ IC=0.5A | 30 | |
| DC Current Gain (hFE) - Min @ IC=1.5A | 12 | |
| Current-Gain - Bandwidth Product (fT) - Min @ IC=100mA | 50 | MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=1.5A, IB=150mA | 1.7 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) @ IC=1.5A, IB=150mA | 1.5 | V |
Key Features
- Low VCE(sat): The MJE182G has a low collector-emitter saturation voltage of 1.7V, making it efficient for low power applications.
- High Current Gain: With a minimum DC current gain (hFE) of 30 at IC=0.5A and 12 at IC=1.5A, it ensures reliable operation in various circuits.
- High Speed Switching: The transistor has a current-gain-bandwidth product (fT) of 50 MHz, suitable for high speed switching applications.
- Annular Construction: Designed to minimize leakages with an annular construction, ensuring low collector cut-off current (ICBO).
- Pb-Free Packages: Available in Pb-free TO-225-3 packages, making it compliant with environmental regulations.
Applications
- Low Power Audio Amplifiers: Ideal for use in low power audio amplifier circuits due to its low VCE(sat) and high current gain.
- High Speed Switching: Suitable for applications requiring fast switching times, such as in power supplies, motor control, and other high-speed electronic circuits.
- General Purpose Amplification: Can be used in various general-purpose amplification and switching applications where reliability and performance are critical.
Q & A
- What is the collector-emitter sustaining voltage (VCEO(sus)) of the MJE182G?
The collector-emitter sustaining voltage (VCEO(sus)) of the MJE182G is 80 Vdc.
- What is the maximum collector current (IC) for the MJE182G?
The maximum collector current (IC) for the MJE182G is 3 A (DC) and 6 A (pulse).
- What is the junction temperature (TJ) of the MJE182G?
The junction temperature (TJ) of the MJE182G is 150 °C.
- What is the current-gain-bandwidth product (fT) of the MJE182G?
The current-gain-bandwidth product (fT) of the MJE182G is 50 MHz at IC=100mA.
- Is the MJE182G available in Pb-free packages?
Yes, the MJE182G is available in Pb-free TO-225-3 packages.
- What are the typical applications of the MJE182G?
The MJE182G is typically used in low power audio amplifiers, high speed switching applications, and general-purpose amplification and switching circuits.
- What is the base-emitter saturation voltage (VBE(sat)) of the MJE182G?
The base-emitter saturation voltage (VBE(sat)) of the MJE182G is 1.5 V at IC=1.5A and IB=150mA.
- What is the collector dissipation (PC) of the MJE182G at TA=25°C?
The collector dissipation (PC) of the MJE182G at TA=25°C is 1.5 W.
- Is the MJE182G suitable for life support systems or medical devices?
No, the MJE182G is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
- What is the storage temperature range for the MJE182G?
The storage temperature range for the MJE182G is -65 to 150 °C.
