MJE3055T
  • Share:

NTE Electronics, Inc MJE3055T

Manufacturer No:
MJE3055T
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN 60V 10A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE3055T is a silicon Epitaxial-Base NPN transistor manufactured by NTE Electronics, Inc., and is packaged in the Jedec TO-220 format. This transistor is designed for use in power switching circuits and general-purpose amplifiers. It is part of a complementary pair, with the MJE2955T being the PNP counterpart.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 70 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A
Base Current (IB) 6 A
Total Power Dissipation at Tcase ≤ 25°C (Ptot) 75 W
Storage Temperature (Tstg) -55 to 150 °C
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft) 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20

Key Features

  • High DC Current Gain: Specified up to 10 A, with a minimum hFE of 20.
  • High Current Gain-Bandwidth Product: Transition frequency (ft) of 2 MHz.
  • Complementary Pair: The MJE3055T has a complementary PNP transistor, the MJE2955T.
  • Robust Package: Jedec TO-220 package for reliable thermal management and ease of mounting.
  • Wide Operating Temperature Range: Maximum operating junction temperature of 150°C and storage temperature range of -55 to 150°C.

Applications

  • Power Switching Circuits: Suitable for high-current switching applications due to its high collector current and power dissipation capabilities.
  • General-Purpose Amplifiers: Used in various amplifier circuits requiring high current gain and bandwidth.
  • Industrial and Automotive Systems: Can be used in systems requiring robust and reliable transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage of the MJE3055T?

    The maximum collector-emitter voltage (VCEO) is 60 V.

  2. What is the maximum collector current of the MJE3055T?

    The maximum collector current (IC) is 10 A.

  3. What is the transition frequency (ft) of the MJE3055T?

    The transition frequency (ft) is 2 MHz.

  4. What is the maximum operating junction temperature of the MJE3055T?

    The maximum operating junction temperature (Tj) is 150°C.

  5. What is the complementary PNP transistor for the MJE3055T?

    The complementary PNP transistor is the MJE2955T.

  6. In what package is the MJE3055T available?

    The MJE3055T is available in the Jedec TO-220 package.

  7. What are the typical applications of the MJE3055T?

    Typical applications include power switching circuits and general-purpose amplifiers.

  8. What is the minimum forward current transfer ratio (hFE) of the MJE3055T?

    The minimum forward current transfer ratio (hFE) is 20.

  9. What is the total power dissipation at Tcase ≤ 25°C for the MJE3055T?

    The total power dissipation at Tcase ≤ 25°C (Ptot) is 75 W.

  10. What is the storage temperature range for the MJE3055T?

    The storage temperature range (Tstg) is -55 to 150°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
Current - Collector Cutoff (Max):700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Power - Max:75 W
Frequency - Transition:2MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$1.16
833

Please send RFQ , we will respond immediately.

Same Series
MJE2955TG
MJE2955TG
TRANS PNP 60V 10A TO220
MJE3055TG
MJE3055TG
TRANS NPN 60V 10A TO220

Similar Products

Part Number MJE3055T MJE3055TG
Manufacturer NTE Electronics, Inc onsemi
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 75 W 75 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220

Related Product By Categories

BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3

Related Product By Brand

1N5361B
1N5361B
NTE Electronics, Inc
DIODE ZENER 27V 5W AXIAL
1N5363B
1N5363B
NTE Electronics, Inc
DIODE ZENER 30V 5W AXIAL
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
TIP147
TIP147
NTE Electronics, Inc
TRANS PNP 100V 10A TO218
TIP142
TIP142
NTE Electronics, Inc
TRANS NPN 100V 10A TO247
MJE182
MJE182
NTE Electronics, Inc
TRANS NPN 80V 3A SOT32-3
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
MJE172
MJE172
NTE Electronics, Inc
TRANS PNP 80V 3A TO126
TIP112
TIP112
NTE Electronics, Inc
TRANS NPN DARL 100V 2A TO220
MJE340
MJE340
NTE Electronics, Inc
TRANS NPN 300V 0.5A TO126
MJE15030
MJE15030
NTE Electronics, Inc
TRANS NPN 150V 8A TO220
BU806
BU806
NTE Electronics, Inc
TRANS NPN DARL 200V 8A TO220-3