Overview
The MJE3055TG is a silicon Epitaxial-Base NPN power transistor manufactured by onsemi. It is designed for use in general-purpose amplifier and switching applications. This transistor is part of a complementary pair, with the MJE2955T being the PNP counterpart. The MJE3055TG is housed in a Jedec TO-220 package, making it suitable for a variety of power switching circuits and amplifier configurations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 70 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 10 | A |
| Base Current (IB) | 6 | A |
| Total Power Dissipation at Tcase ≤ 25°C (Ptot) | 75 | W |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Maximum Operating Junction Temperature (Tj) | 150 | °C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.1 V (IC = 4 A, IB = 0.4 A) | V |
| DC Current Gain (hFE) | 20 to 70 | |
| Transistor Frequency (fT) | 2 MHz (IC = 500 mA, VCE = 10 V) | MHz |
Key Features
- High Current Capability: The transistor can handle a collector current of up to 10 A, making it suitable for high-power applications.
- High Current Gain - Bandwidth Product: The transistor has a high current gain-bandwidth product (fT) of 2 MHz, which is beneficial for high-frequency applications.
- Pb-Free Packages Available: The MJE3055TG is available in lead-free packages, which is important for environmental compliance.
- Complementary Pair: It has a complementary PNP transistor, the MJE2955T, which is useful for push-pull amplifier configurations.
Applications
The MJE3055TG is intended for use in various applications, including:
- General-Purpose Amplifiers: Suitable for a wide range of amplifier circuits due to its high current gain and bandwidth.
- Power Switching Circuits: Ideal for power switching applications where high current and voltage handling are required.
- Push-Pull Amplifiers: When used with its complementary PNP transistor, the MJE2955T, it can be used in push-pull amplifier configurations.
Q & A
- What is the collector-emitter voltage rating of the MJE3055TG?
The collector-emitter voltage (VCEO) rating is 60 V.
- What is the maximum collector current of the MJE3055TG?
The maximum collector current (IC) is 10 A.
- What is the total power dissipation of the MJE3055TG at Tcase ≤ 25°C?
The total power dissipation (Ptot) at Tcase ≤ 25°C is 75 W.
- What is the storage temperature range for the MJE3055TG?
The storage temperature range (Tstg) is -55 to 150°C.
- What is the maximum operating junction temperature for the MJE3055TG?
The maximum operating junction temperature (Tj) is 150°C.
- What is the typical collector-emitter saturation voltage of the MJE3055TG?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.1 V at IC = 4 A and IB = 0.4 A.
- What is the DC current gain range of the MJE3055TG?
The DC current gain (hFE) range is from 20 to 70.
- What is the transistor frequency (fT) of the MJE3055TG?
The transistor frequency (fT) is 2 MHz at IC = 500 mA and VCE = 10 V.
- Is the MJE3055TG available in Pb-free packages?
Yes, the MJE3055TG is available in Pb-free packages.
- What is the complementary PNP transistor for the MJE3055TG?
The complementary PNP transistor is the MJE2955T.
