MJE2955T
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NTE Electronics, Inc MJE2955T

Manufacturer No:
MJE2955T
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS PNP 60V 10A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE2955T is a general-purpose PNP bipolar junction transistor (BJT) manufactured by NTE Electronics, Inc. This device is designed with an epitaxial base process and is housed in a hermetically sealed metal case, specifically the TO-220 package. It is intended for use in general-purpose switching and amplifier applications, making it a versatile component in power electronics.

Key Specifications

Parameter Value
Transistor Type PNP
Package TO-220-3
Continuous Collector Current (IC) 10 A
Collector-Base Voltage (Vcb) 60 V
Collector-Emitter Breakdown Voltage 60 V
Base Current (IB) 6 A (maximum)
DC Current Gain (hFE) 20 @ 4A, 4V (minimum), 100 (maximum)
Emitter-Base Voltage (VBE) 5 V
Collector Dissipation 75 W
Transition Frequency 2 MHz
Operating Junction Temperature -55°C to 150°C (TJ)
Collector Cutoff Current 700 µA (maximum)
Vce Saturation 8 V @ 3.3 A, 10 A
Collector Capacitance 8.5 pF

Key Features

  • Robust power handling capability with a maximum collector current of 10 A and collector dissipation of 75 W.
  • High breakdown voltage and current ratings, making it suitable for a wide range of power electronics applications.
  • High DC current gain (hFE) of 20 @ 4A, 4V, ensuring reliable amplification and switching performance.
  • Transition frequency of 2 MHz, suitable for various high-frequency applications.
  • Wide operating temperature range of -55°C to 150°C, enhancing its reliability in diverse environments.
  • Pb-free packages are available, complying with RoHS standards.

Applications

  • Power amplifiers: Suitable for high-power amplification tasks due to its robust current and voltage handling capabilities.
  • Motor control circuits: Used in controlling high-power motors in various industrial and automotive applications.
  • Switch-mode power supplies: Ideal for use in switch-mode power supplies and inverters due to its high switching speed and reliability.
  • Regulator circuits: Can be used in voltage regulator circuits to ensure stable output voltage.
  • PWM applications: Suitable for pulse-width modulation applications requiring high current and voltage handling.

Q & A

  1. What is the maximum collector current of the MJE2955T transistor?

    The maximum collector current of the MJE2955T transistor is 10 A.

  2. What is the collector-emitter breakdown voltage of the MJE2955T?

    The collector-emitter breakdown voltage of the MJE2955T is 60 V.

  3. What is the transition frequency of the MJE2955T transistor?

    The transition frequency of the MJE2955T transistor is 2 MHz.

  4. What is the operating temperature range of the MJE2955T transistor?

    The operating temperature range of the MJE2955T transistor is -55°C to 150°C (TJ).

  5. What package type is the MJE2955T transistor available in?

    The MJE2955T transistor is available in the TO-220-3 package.

  6. Is the MJE2955T transistor RoHS compliant?

    Yes, the MJE2955T transistor is available in Pb-free packages, making it RoHS compliant.

  7. What are some common applications of the MJE2955T transistor?

    The MJE2955T transistor is commonly used in power amplifiers, motor control circuits, switch-mode power supplies, and regulator circuits).

  8. What is the DC current gain (hFE) of the MJE2955T transistor?

    The DC current gain (hFE) of the MJE2955T transistor is 20 @ 4A, 4V (minimum), with a maximum of 100).

  9. What is the collector dissipation of the MJE2955T transistor?

    The collector dissipation of the MJE2955T transistor is 75 W).

  10. Does the MJE2955T transistor require proper heat sinking for safe operation?

    Yes, proper heat sinking is required for the safe operation of the MJE2955T transistor).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
Current - Collector Cutoff (Max):700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Power - Max:75 W
Frequency - Transition:2MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number MJE2955T MJE2955TG
Manufacturer NTE Electronics, Inc onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A 8V @ 3.3A, 10A
Current - Collector Cutoff (Max) 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V 20 @ 4A, 4V
Power - Max 75 W 75 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220

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