TIP35C
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NTE Electronics, Inc TIP35C

Manufacturer No:
TIP35C
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN 100V 25A TO218
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP35C is a high-power NPN bipolar junction transistor (BJT) manufactured by NTE Electronics, Inc., among other manufacturers. This transistor is designed for general-purpose and power amplifier applications. It is built using planar technology with a 'base island' layout, which enhances its performance and reliability. The TIP35C is known for its high current handling capability and excellent DC gain, making it suitable for a variety of electronic circuits, including audio amplifiers and switching applications.

Key Specifications

Parameter Value
Type Designator TIP35C
Material of Transistor Silicon (Si)
Polarity NPN
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 140 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft) 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20 @ 15 A, 4 V
Package TO-247-3
Mounting Type Through Hole

Key Features

  • High Collector Current: Up to 25 A, making it suitable for high-power applications.
  • Low Leakage Current: ICEO = 1.0 mA @ 30 and 60 V, ensuring minimal current loss.
  • Excellent DC Gain: hFE = 40 Typ @ 15 A, providing high current gain.
  • High Current Gain Bandwidth Product: hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz.
  • High Power Dissipation: Up to 125 W, allowing for robust performance in demanding applications.

Applications

  • General-purpose: Suitable for a wide range of electronic circuits.
  • Audio Amplifiers: Ideal for high-power audio amplifier applications due to its high current and voltage handling capabilities.
  • Switching Applications: Can be used in switching circuits where high current and voltage are required.

Q & A

  1. What is the maximum collector current of the TIP35C transistor?

    The maximum collector current of the TIP35C transistor is 25 A.

  2. What is the maximum collector-emitter voltage of the TIP35C transistor?

    The maximum collector-emitter voltage of the TIP35C transistor is 100 V.

  3. What is the transition frequency of the TIP35C transistor?

    The transition frequency of the TIP35C transistor is 3 MHz.

  4. What is the maximum operating junction temperature of the TIP35C transistor?

    The maximum operating junction temperature of the TIP35C transistor is 150 °C.

  5. What is the package type of the TIP35C transistor?

    The TIP35C transistor is packaged in a TO-247-3 case.

  6. What is the typical DC current gain (hFE) of the TIP35C transistor?

    The typical DC current gain (hFE) of the TIP35C transistor is 40 @ 15 A.

  7. What are the common applications of the TIP35C transistor?

    The TIP35C transistor is commonly used in general-purpose, audio amplifier, and switching applications.

  8. Is the TIP35C transistor RoHS compliant?

    Yes, the TIP35C transistor is RoHS compliant.

  9. What is the maximum collector power dissipation of the TIP35C transistor?

    The maximum collector power dissipation of the TIP35C transistor is 125 W.

  10. What is the leakage current of the TIP35C transistor?

    The leakage current (ICEO) of the TIP35C transistor is 1.0 mA @ 30 and 60 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):25 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 15A, 4V
Power - Max:125 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-218-3
Supplier Device Package:TO-218
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Similar Products

Part Number TIP35C TIP35CW TIP35E TIP35CP TIP36C TIP35CG TIP30C TIP31C TIP32C TIP33C TIP34C TIP35A TIP35B
Manufacturer NTE Electronics, Inc STMicroelectronics NTE Electronics, Inc STMicroelectronics STMicroelectronics onsemi NTE Electronics, Inc Fairchild Semiconductor STMicroelectronics NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN PNP NPN PNP NPN PNP NPN PNP NPN NPN
Current - Collector (Ic) (Max) 25 A 25 A 25 A 25 A 25 A 25 A 1 A 3 A 3 A 10 A 10 A 25 A 25 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 140 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic - 4V @ 5A, 25A 5V @ 6.25A, 25A 4V @ 5A, 25A 4V @ 5A, 25A 4V @ 5A, 25A 700mV @ 125mA, 1A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A - - - -
Current - Collector Cutoff (Max) - 1mA 1mA 1mA 1mA 1mA 300µA 200µA 300µA - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 15A, 4V 10 @ 15A, 4V 25 @ 1.5A, 4V 10 @ 15A, 4V 10 @ 15A, 4V 15 @ 15A, 4V 15 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 100 @ 3A, 4V 100 @ 3A, 4V 10 @ 15A, 4V 10 @ 15A, 4V
Power - Max 125 W 125 W 125 W 125 W 125 W 125 W 2 W 40 W 2 W 80 W 80 W 125 W 125 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz - 3MHz - 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) - 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-218-3 TO-247-3 TO-247-3 TO-3P-3, SC-65-3 TO-247-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-218-3 TO-218-3 TO-218-3 TO-218-3
Supplier Device Package TO-218 TO-247-3 TO-247 TO-3P TO-247-3 TO-247-3 TO-220 TO-220 TO-220 TO-218 TO-218 TO-218 TO-218

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