TIP35CG
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onsemi TIP35CG

Manufacturer No:
TIP35CG
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 100V 25A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP35CG is a high-power NPN transistor produced by onsemi, designed for general-purpose power amplifier and switching applications. This transistor is part of the TIP35 series, which includes complementary PNP transistors (TIP36 series). The TIP35CG is known for its high current handling capabilities and excellent DC gain, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 Vdc
Collector-Base Voltage (VCB) 100 Vdc
Emitter-Base Voltage (VEB) 5.0 Vdc
Collector Current - Continuous (IC) 25 A
Base Current - Continuous (IB) 5.0 A
Total Power Dissipation (PD) @ TC = 25°C 125 W
Operating and Storage Junction Temperature Range (TJ, Tstg) -65 to +150 °C
Thermal Resistance, Junction-to-Case (RθJC) 1.0 °C/W
Thermal Resistance, Junction-to-Free-Air (RθJA) 35.7 °C/W
DC Current Gain (hFE) @ IC = 15 A, VCE = 4.0 V 40 (Typ)
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 25 A, IB = 5.0 A 4.0 Vdc

Key Features

  • High Collector Current: Up to 25 A continuous and 40 A peak.
  • Low Leakage Current: ICEO = 1.0 mA at 30 and 60 V.
  • Excellent DC Gain: hFE = 40 Typ @ 15 A.
  • High Current Gain Bandwidth Product: fT = 3.0 MHz @ IC = 1.0 A.
  • Pb-Free Device: Compliant with lead-free soldering requirements.
  • High Power Dissipation: Up to 125 W @ TC = 25°C.
  • Wide Operating Temperature Range: -65 to +150 °C.

Applications

  • Power Amplifiers: Suitable for high-power audio amplifiers and other power amplifier applications.
  • Switching Applications: Used in high-current switching circuits, such as motor control and power supplies.
  • Industrial Control: Employed in industrial control systems requiring high current and voltage handling.
  • Automotive Systems: Can be used in automotive systems that require robust power handling capabilities.

Q & A

  1. What is the maximum collector current of the TIP35CG transistor?

    The maximum collector current is 25 A continuous and 40 A peak.

  2. What is the typical DC current gain (hFE) of the TIP35CG transistor?

    The typical DC current gain (hFE) is 40 at IC = 15 A and VCE = 4.0 V.

  3. What is the thermal resistance from junction to free air (RθJA) for the TIP35CG?

    The thermal resistance from junction to free air (RθJA) is 35.7 °C/W.

  4. Is the TIP35CG transistor Pb-free?
  5. What is the maximum operating temperature range for the TIP35CG transistor?

    The maximum operating temperature range is -65 to +150 °C.

  6. What are some common applications of the TIP35CG transistor?
  7. What is the collector-emitter saturation voltage (VCE(sat)) for the TIP35CG transistor?

    The collector-emitter saturation voltage (VCE(sat)) is 4.0 V at IC = 25 A and IB = 5.0 A.

  8. What is the total power dissipation (PD) of the TIP35CG transistor at TC = 25°C?

    The total power dissipation (PD) is 125 W at TC = 25°C.

  9. What is the base-emitter on voltage (VBE(on)) for the TIP35CG transistor?

    The base-emitter on voltage (VBE(on)) is 2.0 V at IC = 15 A and VCE = 4.0 V.

  10. What package types are available for the TIP35CG transistor?

    The TIP35CG is available in the TO-247 package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):25 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 5A, 25A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 15A, 4V
Power - Max:125 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number TIP35CG TIP35CW TIP36CG TIP35CP TIP30CG TIP31CG TIP32CG TIP33CG TIP35AG TIP35C
Manufacturer onsemi STMicroelectronics onsemi STMicroelectronics onsemi onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Active Active Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN PNP NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 25 A 25 A 25 A 25 A 1 A 3 A 3 A 10 A 25 A 25 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 60 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A 4V @ 5A, 25A 4V @ 5A, 25A 4V @ 5A, 25A 700mV @ 125mA, 1A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 4V @ 2.5A, 10A 4V @ 5A, 25A -
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA 300µA 300µA 300µA 700µA 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 15A, 4V 10 @ 15A, 4V 15 @ 15A, 4V 10 @ 15A, 4V 15 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 20 @ 3A, 4V 15 @ 15A, 4V 10 @ 15A, 4V
Power - Max 125 W 125 W 125 W 125 W 2 W 2 W 2 W 80 W 125 W 125 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-3P-3, SC-65-3 TO-220-3 TO-220-3 TO-220-3 TO-247-3 TO-247-3 TO-218-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-3P TO-220 TO-220 TO-220 TO-247-3 TO-247-3 TO-218

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