TIP36C
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STMicroelectronics TIP36C

Manufacturer No:
TIP36C
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP 100V 25A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP36C is a PNP silicon epitaxial-base power transistor manufactured by STMicroelectronics. It is designed for use in general-purpose power amplifier and switching applications. The transistor is part of a complementary pair, with the TIP35C being its NPN counterpart. The TIP36C is known for its high current and voltage handling capabilities, making it suitable for a variety of power management and amplification tasks.

Key Specifications

Parameter Value Unit
Transistor Polarity PNP
Maximum Collector-Emitter Voltage (Vceo) 100 V
Maximum Collector-Base Voltage (Vcbo) 100 V
Maximum Emitter-Base Voltage (Vebo) 5.0 V
Maximum Collector Current (Ic) 25 A
Peak Collector Current (Icm) 40 A
Maximum Base Current (Ib) 5.0 A
Power Dissipation (Pd) at Tc=25°C 125 W
Operating Junction Temperature (Tj) -65 to +150 °C
Transition Frequency (ft) 3 MHz
DC Current Gain (hFE) 15 to 75
Collector-Emitter Saturation Voltage (Vce(sat)) 1.8 to 4.0 V
Package TO-247 or TO-3P

Key Features

  • Low collector-emitter saturation voltage
  • Complementary NPN-PNP transistors (TIP35C is the NPN counterpart)
  • High current handling capability up to 25 A
  • High voltage handling capability up to 100 V
  • Suitable for power linear and switching applications
  • Manufactured in epitaxial-base planar technology
  • Excellent DC gain and low leakage current

Applications

  • General-purpose power amplifier applications
  • Switching applications
  • Audio amplifier applications
  • Other high-power electronic circuits requiring reliable and efficient power management

Q & A

  1. What is the maximum collector current of the TIP36C transistor?

    The maximum collector current (Ic) of the TIP36C transistor is 25 A.

  2. What is the maximum collector-emitter voltage of the TIP36C transistor?

    The maximum collector-emitter voltage (Vceo) of the TIP36C transistor is 100 V.

  3. What is the operating junction temperature range of the TIP36C transistor?

    The operating junction temperature range of the TIP36C transistor is -65 to +150 °C.

  4. What is the transition frequency (ft) of the TIP36C transistor?

    The transition frequency (ft) of the TIP36C transistor is 3 MHz.

  5. What are the typical applications of the TIP36C transistor?

    The TIP36C transistor is typically used in general-purpose power amplifier and switching applications, including audio amplifiers.

  6. What is the package type of the TIP36C transistor?

    The TIP36C transistor is available in TO-247 or TO-3P packages.

  7. What is the DC current gain (hFE) range of the TIP36C transistor?

    The DC current gain (hFE) range of the TIP36C transistor is from 15 to 75.

  8. What is the collector-emitter saturation voltage (Vce(sat)) of the TIP36C transistor?

    The collector-emitter saturation voltage (Vce(sat)) of the TIP36C transistor ranges from 1.8 to 4.0 V.

  9. Is the TIP36C transistor RoHS compliant?
  10. What is the peak collector current (Icm) of the TIP36C transistor?

    The peak collector current (Icm) of the TIP36C transistor is 40 A.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):25 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 5A, 25A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 15A, 4V
Power - Max:125 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number TIP36C TIP36CG TIP36CW TIP36CP TIP30C TIP31C TIP32C TIP33C TIP34C TIP35C TIP36A TIP36B
Manufacturer STMicroelectronics onsemi STMicroelectronics STMicroelectronics NTE Electronics, Inc Fairchild Semiconductor STMicroelectronics NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc NTE Electronics, Inc
Product Status Active Active Active Obsolete Active Active Active Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP NPN PNP NPN PNP NPN PNP PNP
Current - Collector (Ic) (Max) 25 A 25 A 25 A 25 A 1 A 3 A 3 A 10 A 10 A 25 A 25 A 25 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A 4V @ 5A, 25A 4V @ 5A, 25A 4V @ 5A, 25A 700mV @ 125mA, 1A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A - - - - -
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA 300µA 200µA 300µA - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 15A, 4V 15 @ 15A, 4V 10 @ 15A, 4V 10 @ 15A, 4V 15 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 100 @ 3A, 4V 100 @ 3A, 4V 10 @ 15A, 4V 10 @ 15A, 4V 10 @ 15A, 4V
Power - Max 125 W 125 W 125 W 125 W 2 W 40 W 2 W 80 W 80 W 125 W 125 W 125 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz - 3MHz - 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) - 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-3P-3, SC-65-3 TO-220-3 TO-220-3 TO-220-3 TO-218-3 TO-218-3 TO-218-3 TO-218-3 TO-218-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-3P TO-220 TO-220 TO-220 TO-218 TO-218 TO-218 TO-218 TO-218

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