TIP32C
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STMicroelectronics TIP32C

Manufacturer No:
TIP32C
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP 100V 3A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP32C is a silicon Epitaxial-base PNP power transistor manufactured by STMicroelectronics. It is packaged in a Jedec TO-220 plastic package, making it suitable for medium power linear and switching applications. The TIP32C is known for its high collector current and current gain, making it an excellent choice for various industrial and electronic circuits. Its complementary NPN type is the TIP31C.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -100 V
Collector-Emitter Voltage (VCEO) -100 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -3 A
Collector Peak Current (ICM) -5 A (tP < 5ms)
Base Current (IB) -1 A
Total Dissipation at Tcase = 25°C 40 W
Max. Operating Junction Temperature (TJ) 150 °C
DC Current Gain (hFE) 10 to 50
Collector-Emitter Saturation Voltage (VCE(sat)) -1.2 V
Base-Emitter Voltage (VBE(on)) -1.8 V

Key Features

  • Medium-power PNP transistor
  • DC Current Gain (hFE) of 10 to 50
  • Continuous Collector current (IC) of 3 A
  • Collector-Emitter voltage (VCE) of 100 V
  • Collector-Base voltage (VCB) of 100 V
  • Emitter-Base voltage (VBE) of 5 V
  • Available in TO-220 package
  • Lead-free ECOPACK® package option

Applications

  • High current switching (up to 3 A) loads
  • Medium power switches
  • Large signal amplification
  • Speed control of motors
  • Half bridge circuits
  • Inverter and other rectifier circuits
  • Linear and switching industrial equipment

Q & A

  1. What is the TIP32C transistor?

    The TIP32C is a silicon Epitaxial-base PNP power transistor in a Jedec TO-220 plastic package, intended for medium power linear and switching applications.

  2. What are the key specifications of the TIP32C?

    The TIP32C has a collector-emitter voltage of 100 V, collector current of 3 A, and a DC current gain (hFE) of 10 to 50. It also has a maximum operating junction temperature of 150°C and total dissipation of 40 W at Tcase = 25°C.

  3. What package type is the TIP32C available in?

    The TIP32C is available in the TO-220 plastic package.

  4. What are some common applications of the TIP32C?

    The TIP32C is used in high current switching, medium power switches, large signal amplification, speed control of motors, half bridge circuits, and inverter and other rectifier circuits.

  5. What is the complementary NPN type of the TIP32C?

    The complementary NPN type of the TIP32C is the TIP31C.

  6. How should the TIP32C be controlled for switching applications?

    The TIP32C can be driven directly from a PWM signal, but the PWM should source enough current for complete saturation. A heat sink is recommended due to high current and heat dissipation.

  7. What is the maximum collector peak current of the TIP32C?

    The maximum collector peak current (ICM) of the TIP32C is 5 A for a pulse duration less than 5 ms.

  8. Is the TIP32C available in lead-free packaging?
  9. What is the base-emitter voltage (VBE) of the TIP32C?

    The base-emitter voltage (VBE) of the TIP32C is 5 V.

  10. What is the collector-emitter saturation voltage (VCE(sat)) of the TIP32C?

    The collector-emitter saturation voltage (VCE(sat)) of the TIP32C is approximately 1.2 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Part Number TIP32C TIP32CG TIP42C TIP32E TIP34C TIP32G TIP35C TIP36C TIP33C TIP30C TIP31C TIP32 TIP32A TIP32B
Manufacturer STMicroelectronics onsemi STMicroelectronics NTE Electronics, Inc NTE Electronics, Inc onsemi NTE Electronics, Inc STMicroelectronics NTE Electronics, Inc NTE Electronics, Inc Fairchild Semiconductor Fairchild Semiconductor NTE Electronics, Inc NTE Electronics, Inc
Product Status Active Active Active Active Active Active Active Active Active Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP PNP NPN PNP NPN PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 6 A 3 A 10 A 3 A 25 A 25 A 10 A 1 A 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 140 V 100 V 40 V 100 V 100 V 100 V 100 V 100 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 2.5V @ 750mA, 3A - 1.2V @ 375mA, 3A - 4V @ 5A, 25A - 700mV @ 125mA, 1A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 300µA 300µA 700µA 300µA - 300µA - 1mA - 300µA 200µA 300µA 300µA 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V 10 @ 3A, 4V 15 @ 3A, 4V 25 @ 1A, 4V 100 @ 3A, 4V 10 @ 3A, 4V 10 @ 15A, 4V 10 @ 15A, 4V 100 @ 3A, 4V 15 @ 1A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V 10 @ 3A, 4V
Power - Max 2 W 2 W 65 W 40 W 80 W 2 W 125 W 125 W 80 W 2 W 40 W 2 W 2 W 2 W
Frequency - Transition - 3MHz - 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz - 3MHz 3MHz - 3MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) - 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-218-3 TO-220-3 TO-218-3 TO-247-3 TO-218-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-218 TO-220 TO-218 TO-247-3 TO-218 TO-220 TO-220 TO-220-3 TO-220 TO-220

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