2N5416
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NTE Electronics, Inc 2N5416

Manufacturer No:
2N5416
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS PNP 300V 1A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5416 is a high-performance PNP bipolar junction transistor (BJT) manufactured by NTE Electronics, Inc. This transistor is designed for a wide range of applications requiring high voltage and current handling capabilities. It is particularly suited for power amplification, switching, and general-purpose use in consumer and industrial electronics.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (Vcb) 300 V
Collector-Emitter Voltage (Vce) 300 V
Emitter-Base Voltage (Veb) 5 V
Collector Current (Ic) 1 A
Base Current (Ib) 50 mA
Power Dissipation (Pd) 750 mW
Operating Temperature Range -55 to 150 °C
Package Type TO-39
RoHS Compliance Yes

Key Features

  • High collector current of up to 1 A.
  • High collector-emitter voltage of up to 300 V.
  • Low noise and high gain characteristics.
  • Compact TO-39 package suitable for various applications.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power amplification in audio and industrial equipment.
  • Switching applications in power supplies and motor control circuits.
  • General-purpose use in consumer electronics such as TVs, radios, and other household appliances.
  • Industrial control systems and automation.
  • Aerospace and military applications due to its high reliability and ruggedness.

Q & A

  1. What is the collector current rating of the 2N5416 transistor?

    The collector current rating of the 2N5416 transistor is up to 1 A.

  2. What is the maximum collector-emitter voltage for the 2N5416 transistor?

    The maximum collector-emitter voltage for the 2N5416 transistor is 300 V.

  3. What package type is the 2N5416 transistor available in?

    The 2N5416 transistor is available in the TO-39 package type.

  4. Is the 2N5416 transistor RoHS compliant?

    Yes, the 2N5416 transistor is RoHS compliant.

  5. What are some common applications for the 2N5416 transistor?

    The 2N5416 transistor is commonly used in power amplification, switching applications, and general-purpose use in consumer and industrial electronics.

  6. What is the operating temperature range for the 2N5416 transistor?

    The operating temperature range for the 2N5416 transistor is -55 to 150 °C.

  7. How much power can the 2N5416 transistor dissipate?

    The 2N5416 transistor can dissipate up to 750 mW of power.

  8. What is the emitter-base voltage rating for the 2N5416 transistor?

    The emitter-base voltage rating for the 2N5416 transistor is 5 V.

  9. Can the 2N5416 transistor be used in aerospace and military applications?

    Yes, the 2N5416 transistor can be used in aerospace and military applications due to its high reliability and ruggedness.

  10. What are the key features of the 2N5416 transistor?

    The key features include high collector current, high collector-emitter voltage, low noise, high gain, and a compact package.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:1 W
Frequency - Transition:15MHz
Operating Temperature:- 
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39
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In Stock

$1.49
347

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Similar Products

Part Number 2N5416 2N5496 2N5416S 2N5415
Manufacturer NTE Electronics, Inc NTE Electronics, Inc Microchip Technology Solid State Inc.
Product Status Active Active Active Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 7 A 50 µA 1 A
Voltage - Collector Emitter Breakdown (Max) 300 V 70 V 300 V 200 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 5mA, 50mA 3.5V @ 3A, 7A 2V @ 5mA, 50mA 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA 1mA 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 2A, 4V 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 1 W 40 W 750 mW 1 W
Frequency - Transition 15MHz 4MHz - 15MHz
Operating Temperature - -55°C ~ 150°C (TJ) -65°C ~ 200°C (TJ) 200°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-220-3 TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 TO-220 TO-39 (TO-205AD) TO-39

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