Overview
The 2N5415 is a silicon PNP transistor manufactured by Solid State Inc., designed for consumer and industrial line-operated applications. This transistor is part of the broader family of bipolar junction transistors (BJTs) and is known for its reliability and performance in various electronic circuits.
It is housed in a TO-39 package, which is a through-hole type, making it suitable for a wide range of applications where high current and voltage handling are required.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 200 | V |
| Collector-Emitter Voltage | VCEO | 200 | V |
| Emitter-Base Voltage | VEBO | 4.0 | V |
| Continuous Collector Current | IC | 1.0 | A |
| Continuous Base Current | IB | 0.5 | A |
| Power Dissipation | PD | 1.0 | W |
| Operating and Storage Junction Temperature | TJ, Tstg | -65 to +200 | °C |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 2.5 | V |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.5 | V |
| Current Gain (hFE) | hFE | 30 - 150 |
Key Features
- High Voltage Handling: The 2N5415 can handle collector-base and collector-emitter voltages up to 200V, making it suitable for high-voltage applications.
- High Current Capability: It can handle a continuous collector current of 1A, which is adequate for many power and switching applications.
- Wide Operating Temperature Range: The transistor operates over a junction temperature range of -65°C to +200°C, ensuring reliability in various environmental conditions.
- Low Saturation Voltages: The VCE(SAT) and VBE(SAT) are relatively low, which helps in reducing power losses in switching applications.
- High Current Gain (hFE): With a current gain range of 30 to 150, it provides good amplification characteristics.
Applications
- Consumer Electronics: Suitable for use in consumer electronics such as audio amplifiers, power supplies, and other general-purpose circuits.
- Industrial Applications: Used in industrial control circuits, motor control, and other high-reliability applications where robust performance is required.
- Power Supplies: Can be used in the design of power supplies, especially those requiring high voltage and current handling.
- Switching Circuits: Ideal for switching applications due to its low saturation voltages and high current gain.
Q & A
- What is the maximum collector-base voltage of the 2N5415 transistor?
The maximum collector-base voltage (VCBO) of the 2N5415 transistor is 200V.
- What is the continuous collector current rating of the 2N5415?
The continuous collector current (IC) rating of the 2N5415 is 1A.
- What is the operating temperature range of the 2N5415 transistor?
The operating and storage junction temperature range of the 2N5415 is -65°C to +200°C.
- What is the typical current gain (hFE) of the 2N5415 transistor?
The typical current gain (hFE) of the 2N5415 transistor ranges from 30 to 150.
- What type of package does the 2N5415 transistor come in?
The 2N5415 transistor is housed in a TO-39 package, which is a through-hole type.
- What are some common applications of the 2N5415 transistor?
The 2N5415 transistor is commonly used in consumer electronics, industrial applications, power supplies, and switching circuits.
- What is the maximum power dissipation of the 2N5415 transistor?
The maximum power dissipation (PD) of the 2N5415 transistor is 1W.
- What is the emitter-base voltage rating of the 2N5415 transistor?
The emitter-base voltage (VEBO) rating of the 2N5415 transistor is 4.0V).
- Can the 2N5415 transistor be used in high-frequency applications?
The 2N5415 transistor has a transition frequency (fT) of 15MHz, making it suitable for some high-frequency applications, though it may not be ideal for very high-frequency uses).
- Is the 2N5415 transistor available in lead-free packaging?
Yes, the 2N5415 transistor can be ordered in lead-free (PbFree) packaging by adding the appropriate suffix to the part number when ordering).
