MJ15025
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Solid State Inc. MJ15025

Manufacturer No:
MJ15025
Manufacturer:
Solid State Inc.
Package:
Bulk
Description:
TRANS PNP 250V 16A TO3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJ15025 is a high-power PNP bipolar junction transistor (BJT) manufactured by Solid State Inc., now part of ON Semiconductor. This transistor is designed for high-current and high-voltage applications, making it suitable for various industrial and commercial uses. It features a TO-3 package, which is known for its robustness and thermal dissipation capabilities.

Key Specifications

Parameter Value
Transistor Polarity PNP
Collector Emitter Voltage V(br)ceo 250V
Transition Frequency ft 4MHz
Power Dissipation Pd 250W
DC Collector Current -16A
DC Current Gain hFE 15 @ 8A, 4V
Transistor Case Style TO-3
No. of Pins 3 Pins
Operating Temperature Max 200°C
Operating Temperature Range -65°C to +200°C
Voltage Vcbo 400V
Termination Type Through Hole

Key Features

  • High Power Handling: The MJ15025 can handle up to 250W of power dissipation and 16A of continuous collector current, making it suitable for high-power applications.
  • High Voltage Capability: With a collector-emitter breakdown voltage of 250V and a collector-base breakdown voltage of 400V, this transistor is robust against high voltage stresses.
  • High Current Gain: The transistor has a minimum DC current gain (hFE) of 15 at 8A and 4V, ensuring reliable amplification in various circuits.
  • Wide Operating Temperature Range: It operates within a temperature range of -65°C to +200°C, making it versatile for different environmental conditions.
  • TO-3 Package: The TO-3 package provides excellent thermal dissipation and mechanical robustness, suitable for demanding applications.

Applications

  • High Power Audio Systems: The MJ15025 is often used in high-power audio amplifiers due to its ability to handle high currents and voltages.
  • Disk Head Positioners: Its high current gain and robustness make it suitable for disk head positioning systems in data storage devices.
  • Industrial Control Systems: This transistor can be used in various industrial control systems that require high power and reliability.
  • Power Supplies and Switching Regulators: It is also used in power supply units and switching regulators where high power handling is necessary.

Q & A

  1. What is the collector-emitter breakdown voltage of the MJ15025 transistor?

    The collector-emitter breakdown voltage (V(br)ceo) of the MJ15025 transistor is 250V.

  2. What is the maximum power dissipation of the MJ15025 transistor?

    The maximum power dissipation (Pd) of the MJ15025 transistor is 250W.

  3. What is the operating temperature range of the MJ15025 transistor?

    The operating temperature range of the MJ15025 transistor is -65°C to +200°C.

  4. What is the package type of the MJ15025 transistor?

    The MJ15025 transistor comes in a TO-3 package.

  5. Is the MJ15025 transistor RoHS compliant?

    Yes, the MJ15025 transistor is RoHS compliant.

  6. What is the transition frequency (ft) of the MJ15025 transistor?

    The transition frequency (ft) of the MJ15025 transistor is 4MHz.

  7. What is the DC current gain (hFE) of the MJ15025 transistor?

    The minimum DC current gain (hFE) of the MJ15025 transistor is 15 at 8A and 4V.

  8. Can the MJ15025 transistor be used in high-power audio systems?

    Yes, the MJ15025 transistor is often used in high-power audio systems due to its high current and voltage handling capabilities.

  9. Is the MJ15025 transistor suitable for industrial control systems?

    Yes, the MJ15025 transistor is suitable for industrial control systems that require high power and reliability.

  10. What is the maximum collector current of the MJ15025 transistor?

    The maximum collector current (Ic) of the MJ15025 transistor is 16A.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):16 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:4V @ 3.2A, 16A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 8A, 4V
Power - Max:250 W
Frequency - Transition:4MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-204AA, TO-3
Supplier Device Package:TO-3
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Similar Products

Part Number MJ15025 MJ15025G MJ10025 MJ15015 MJ15022 MJ15023 MJ15024
Manufacturer Solid State Inc. onsemi Solid State Inc. NTE Electronics, Inc Solid State Inc. Solid State Inc. Solid State Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type PNP PNP NPN - Darlington NPN NPN PNP NPN
Current - Collector (Ic) (Max) 16 A 16 A 20 A 15 A 16 A 16 A 16 A
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V 850 V 120 V 200 V 200 V 250 V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A 4V @ 3.2A, 16A 5V @ 5A, 20A 5V @ 7A, 15A 4V @ 3.2A, 16A 4V @ 3.2A, 16A 1.4V @ 800mA, 8A
Current - Collector Cutoff (Max) 500µA 500µA 250µA 100µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A, 4V 15 @ 8A, 4V 50 @ 5A, 5V 20 @ 4A, 4V 15 @ 8A, 4V 15 @ 8A, 4V 15 @ 8A, 4V
Power - Max 250 W 250 W 250 W 180 W 250 W 250 W 250 W
Frequency - Transition 4MHz 4MHz - 6MHz 4MHz 4MHz 4MHz
Operating Temperature 150°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-3 TO-204 (TO-3) TO-3 TO-3 TO-3 TO-3 TO-3

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