MJ15025G
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onsemi MJ15025G

Manufacturer No:
MJ15025G
Manufacturer:
onsemi
Package:
Tray
Description:
TRANS PNP 250V 16A TO204
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJ15025G is a high-power PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for high-power applications such as high-power audio amplifiers, disk head positioners, and other linear applications. It is part of the MJ15025 series, which is known for its high safe operating area, high DC current gain, and robust thermal characteristics.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 250 Vdc
Collector-Base Voltage VCBO 400 Vdc
Emitter-Base Voltage VEBO 5 Vdc
Collector Current - Continuous IC 16 Adc
Collector Current - Peak ICM 30 Adc
Base Current - Continuous IB 5 Adc
Total Device Dissipation @ TC = 25°C PD 250 W
Thermal Resistance, Junction-to-Case RJC 0.70 °C/W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
DC Current Gain (IC = 16 Adc, VCE = 4 Vdc) hFE 15 - 60
Collector-Emitter Saturation Voltage (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) 1.4 - 4.0 Vdc

Key Features

  • High Safe Operating Area: Ensures reliable operation under various conditions.
  • High DC Current Gain: Provides efficient amplification in high-power applications.
  • Complementary Devices: Complementary to MJ15022 (NPN) and MJ15024 (NPN) for balanced circuit design.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • High Collector Current and Voltage Ratings: Suitable for high-power audio and other linear applications.
  • Low Collector-Emitter Saturation Voltage: Minimizes power loss and improves efficiency.

Applications

  • High-Power Audio Amplifiers: Ideal for amplifying audio signals in high-power audio systems.
  • Disk Head Positioners: Used in disk drive systems for precise positioning.
  • Linear Applications: Suitable for various linear applications requiring high power and reliability.
  • Power Supplies and Switching Regulators: Can be used in power supply circuits and switching regulators due to its high current and voltage handling capabilities.

Q & A

  1. What is the maximum collector-emitter voltage for the MJ15025G transistor?

    The maximum collector-emitter voltage (VCEO) for the MJ15025G is 250 Vdc.

  2. What is the continuous collector current rating of the MJ15025G?

    The continuous collector current (IC) rating is 16 Adc.

  3. Is the MJ15025G Pb-Free and RoHS compliant?

    Yes, the MJ15025G is Pb-Free and RoHS compliant.

  4. What is the thermal resistance, junction-to-case (RJC) for the MJ15025G?

    The thermal resistance, junction-to-case (RJC) is 0.70 °C/W.

  5. What are the operating and storage junction temperature ranges for the MJ15025G?

    The operating and storage junction temperature range is -65 to +200 °C.

  6. What is the DC current gain (hFE) for the MJ15025G at IC = 16 Adc and VCE = 4 Vdc?

    The DC current gain (hFE) ranges from 15 to 60 at IC = 16 Adc and VCE = 4 Vdc.

  7. What is the collector-emitter saturation voltage (VCE(sat)) for the MJ15025G at IC = 16 Adc and IB = 3.2 Adc?

    The collector-emitter saturation voltage (VCE(sat)) ranges from 1.4 to 4.0 Vdc at IC = 16 Adc and IB = 3.2 Adc.

  8. What are some common applications of the MJ15025G transistor?

    Common applications include high-power audio amplifiers, disk head positioners, and other linear applications.

  9. What package type is the MJ15025G available in?

    The MJ15025G is available in the TO-204 (TO-3) package.

  10. Where can I find detailed specifications and datasheets for the MJ15025G?

    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser, LCSC, and others.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):16 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:4V @ 3.2A, 16A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 8A, 4V
Power - Max:250 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-204AA, TO-3
Supplier Device Package:TO-204 (TO-3)
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Same Series
MJ15023G
MJ15023G
TRANS PNP 200V 16A TO204

Similar Products

Part Number MJ15025G MJ15015G MJ15022G MJ15023G MJ15024G MJ15025
Manufacturer onsemi onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Active Active Active Active Active Active
Transistor Type PNP NPN NPN PNP NPN PNP
Current - Collector (Ic) (Max) 16 A 15 A 16 A 16 A 16 A 16 A
Voltage - Collector Emitter Breakdown (Max) 250 V 120 V 200 V 200 V 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A 5V @ 7A, 15A 4V @ 3.2A, 16A 4V @ 3.2A, 16A 4V @ 3.2A, 16A 4V @ 3.2A, 16A
Current - Collector Cutoff (Max) 500µA 100µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A, 4V 10 @ 4A, 2V 15 @ 8A, 4V 15 @ 8A, 4V 15 @ 8A, 4V 15 @ 8A, 4V
Power - Max 250 W 180 W 250 W 250 W 250 W 250 W
Frequency - Transition 4MHz 6MHz 4MHz 4MHz 4MHz 4MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-204 (TO-3) TO-3

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