Overview
The 2N1711 is a silicon Planar Epitaxial NPN transistor manufactured by Solid State Devices, Inc. (SSDI). It is housed in a durable TO-39 metal case and is designed for high-performance applications in amplifiers, oscillators, and switching circuits. Known for its reliability and low noise characteristics, the 2N1711 is particularly suited for use in audio amplification and radio frequency (RF) applications where signal clarity and fidelity are crucial.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 75 | V |
| Collector-Emitter Voltage (VCE) | 50 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 500 mA | mA |
| Total Dissipation at Tamb ≤ 25°C | 0.8 W | W |
| Max. Operating Junction Temperature (Tj) | 175°C | °C |
| DC Current Gain (hFE) @ IC = 10 mA, VCE = 10 V | 40 - 300 | - |
| Transition Frequency (fT) | 100 MHz | MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IB = 15 mA, IC = 150 mA | 0.5 - 1.5 V | V |
| Base-Emitter Saturation Voltage (VBE(sat)) @ IB = 15 mA, IC = 150 mA | 0.95 - 1.3 V | V |
| Package / Case | TO-39 Metal Can | - |
Key Features
- High Performance: The 2N1711 is designed for high-performance applications, including amplifiers, oscillators, and switching circuits.
- Low Noise: It is particularly noted for its low noise characteristics, making it suitable for audio and RF applications.
- Robust Design: Housed in a durable TO-39 metal case, the transistor is reliable in various electronic settings.
- High Current Handling: It can handle up to 500 mA of collector current and peak collector currents up to 1 A, making it suitable for medium power tasks.
- High Frequency Operation: The transistor has a transition frequency of 100 MHz, making it effective in RF circuits.
- Low Capacitance: It minimizes disruptions in high-frequency signals, ensuring signal integrity in communication devices.
- Adaptability: The 2N1711 can be used in common base, common emitter, and common collector configurations, offering flexibility in circuit design.
Applications
- Audio Amplification: The 2N1711 is used in audio amplification circuits to enhance sound clarity and fidelity.
- Radio Frequency (RF) Applications: It is valued in RF circuits for its ability to operate at high frequencies and maintain signal strength against interference.
- Switching Circuits: The transistor is suitable for switching applications due to its reliable switching proficiency and ability to handle medium power tasks.
- Pre-amplification: It is used in pre-amplification stages to prepare signals for further amplification, ensuring clear and faithful outputs.
- General Signal Amplification: The 2N1711 is used in a variety of projects ranging from small electronics to complex circuit designs for general signal amplification.
Q & A
- What is the maximum collector current of the 2N1711 transistor?
The maximum collector current of the 2N1711 transistor is 500 mA.
- What is the maximum collector-emitter voltage of the 2N1711 transistor?
The maximum collector-emitter voltage of the 2N1711 transistor is 50 V.
- What is the transition frequency of the 2N1711 transistor?
The transition frequency of the 2N1711 transistor is 100 MHz.
- What type of package does the 2N1711 transistor use?
The 2N1711 transistor is housed in a TO-39 metal case.
- What are the typical applications of the 2N1711 transistor?
The 2N1711 transistor is typically used in audio amplification, RF applications, switching circuits, pre-amplification, and general signal amplification.
- What is the maximum operating junction temperature of the 2N1711 transistor?
The maximum operating junction temperature of the 2N1711 transistor is 175°C.
- Is the 2N1711 transistor suitable for high-frequency applications?
Yes, the 2N1711 transistor is suitable for high-frequency applications due to its low capacitance and high transition frequency.
- What is the DC current gain (hFE) range of the 2N1711 transistor?
The DC current gain (hFE) range of the 2N1711 transistor is 40 to 300.
- Is the 2N1711 transistor lead-free and ROHS compliant?
Yes, the 2N1711 transistor is lead-free and ROHS compliant.
- What is the collector-emitter saturation voltage of the 2N1711 transistor?
The collector-emitter saturation voltage of the 2N1711 transistor is 0.5 to 1.5 V at IB = 15 mA and IC = 150 mA.
