2N5416S
  • Share:

Microchip Technology 2N5416S

Manufacturer No:
2N5416S
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
TRANS PNP 300V 50UA TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5416S is a silicon PNP bipolar junction transistor (BJT) produced by Microchip Technology. This transistor is designed for consumer and industrial line-operated applications, offering high reliability and performance. It is part of the 2N5415 and 2N5416 series, which are known for their robust specifications and versatility in various electronic circuits.

The 2N5416S is qualified to military standards up to JANS level per MIL-PRF-19500/485, ensuring its suitability for high-reliability applications. It is available in several package types, including TO-39 (TO-205AD) and surface mount packages like U4 and UA.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 300 V
Collector-Base Voltage VCBO 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 0.75 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance Junction-to-Ambient RӨJA 234 °C/W
Thermal Resistance Junction-to-Case RӨJC 17.5 °C/W

Key Features

  • JAN, JANTX, JANTXV, and JANS qualifications per MIL-PRF-19500/485 for high-reliability applications.
  • RoHS compliant.
  • General purpose transistor for low power applications requiring high frequency switching.
  • Low package profile available in TO-39 (TO-205AD) and surface mount packages like U4 and UA.
  • Hermetically sealed, kovar base, nickel cap with gold plated kovar leads.

Applications

  • Consumer and industrial line-operated applications.
  • Military and other high-reliability applications due to its military qualifications).
  • General purpose low power applications requiring high frequency switching).

Q & A

  1. What is the collector-emitter voltage rating of the 2N5416S transistor?

    The collector-emitter voltage rating of the 2N5416S transistor is 300 V).

  2. What are the package options available for the 2N5416S transistor?

    The 2N5416S transistor is available in TO-39 (TO-205AD) and surface mount packages like U4 and UA).

  3. Is the 2N5416S transistor RoHS compliant?

    Yes, the 2N5416S transistor is RoHS compliant).

  4. What are the operating and storage junction temperature ranges for the 2N5416S transistor?

    The operating and storage junction temperature ranges for the 2N5416S transistor are -65 to +200 °C).

  5. What is the continuous collector current rating of the 2N5416S transistor?

    The continuous collector current rating of the 2N5416S transistor is 1.0 A).

  6. What are the typical applications of the 2N5416S transistor?

    The 2N5416S transistor is typically used in consumer and industrial line-operated applications, as well as in military and other high-reliability applications).

  7. What is the thermal resistance junction-to-ambient of the 2N5416S transistor?

    The thermal resistance junction-to-ambient of the 2N5416S transistor is 234 °C/W).

  8. Does the 2N5416S transistor have any special packaging options?

    Yes, the 2N5416S transistor is available in hermetically sealed packages with kovar base and nickel cap, and gold plated kovar leads).

  9. What is the power dissipation rating of the 2N5416S transistor?

    The power dissipation rating of the 2N5416S transistor is 0.75 W at TA = +25 °C).

  10. Are there any specific military qualifications for the 2N5416S transistor?

    Yes, the 2N5416S transistor is qualified to JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/485).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):50 µA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:750 mW
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
0 Remaining View Similar

In Stock

$32.03
7

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N5416S 2N5416
Manufacturer Microchip Technology NTE Electronics, Inc
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 50 µA 1 A
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 750 mW 1 W
Frequency - Transition - 15MHz
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-39

Related Product By Categories

BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX53-TP
BCX53-TP
Micro Commercial Co
TRANS PNP 80V 1A SOT89
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC847CW/DG/B2,115
BC847CW/DG/B2,115
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323

Related Product By Brand

KSZ8851-16MLL-EVAL
KSZ8851-16MLL-EVAL
Microchip Technology
BOARD EVALUATION KSZ8851-16MLL
1N5711E3/TR
1N5711E3/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
1N5343B/TR12
1N5343B/TR12
Microchip Technology
DIODE ZENER 7.5V 5W T18
BZV55C11/TR
BZV55C11/TR
Microchip Technology
VOLTAGE REGULATOR
ATTINY13A-SSUR
ATTINY13A-SSUR
Microchip Technology
IC MCU 8BIT 1KB FLASH 8SOIC
ATMEGA644-20AU
ATMEGA644-20AU
Microchip Technology
IC MCU 8BIT 64KB FLASH 44TQFP
ATMEGA48-20AUR
ATMEGA48-20AUR
Microchip Technology
IC MCU 8BIT 4KB FLASH 32TQFP
LAN9514-JZX
LAN9514-JZX
Microchip Technology
IC USB 2.0 ETHER CTRLR 64QFN
24AA02E48T-I/OT
24AA02E48T-I/OT
Microchip Technology
IC EEPROM 2KBIT I2C SOT23-5
24AA025E48-I/SN
24AA025E48-I/SN
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT24C02N-10SI-1.8
AT24C02N-10SI-1.8
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT24C02N-10SI-1.8-T
AT24C02N-10SI-1.8-T
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC