2N5416S
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Microchip Technology 2N5416S

Manufacturer No:
2N5416S
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
TRANS PNP 300V 50UA TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5416S is a silicon PNP bipolar junction transistor (BJT) produced by Microchip Technology. This transistor is designed for consumer and industrial line-operated applications, offering high reliability and performance. It is part of the 2N5415 and 2N5416 series, which are known for their robust specifications and versatility in various electronic circuits.

The 2N5416S is qualified to military standards up to JANS level per MIL-PRF-19500/485, ensuring its suitability for high-reliability applications. It is available in several package types, including TO-39 (TO-205AD) and surface mount packages like U4 and UA.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 300 V
Collector-Base Voltage VCBO 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 0.75 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance Junction-to-Ambient RӨJA 234 °C/W
Thermal Resistance Junction-to-Case RӨJC 17.5 °C/W

Key Features

  • JAN, JANTX, JANTXV, and JANS qualifications per MIL-PRF-19500/485 for high-reliability applications.
  • RoHS compliant.
  • General purpose transistor for low power applications requiring high frequency switching.
  • Low package profile available in TO-39 (TO-205AD) and surface mount packages like U4 and UA.
  • Hermetically sealed, kovar base, nickel cap with gold plated kovar leads.

Applications

  • Consumer and industrial line-operated applications.
  • Military and other high-reliability applications due to its military qualifications).
  • General purpose low power applications requiring high frequency switching).

Q & A

  1. What is the collector-emitter voltage rating of the 2N5416S transistor?

    The collector-emitter voltage rating of the 2N5416S transistor is 300 V).

  2. What are the package options available for the 2N5416S transistor?

    The 2N5416S transistor is available in TO-39 (TO-205AD) and surface mount packages like U4 and UA).

  3. Is the 2N5416S transistor RoHS compliant?

    Yes, the 2N5416S transistor is RoHS compliant).

  4. What are the operating and storage junction temperature ranges for the 2N5416S transistor?

    The operating and storage junction temperature ranges for the 2N5416S transistor are -65 to +200 °C).

  5. What is the continuous collector current rating of the 2N5416S transistor?

    The continuous collector current rating of the 2N5416S transistor is 1.0 A).

  6. What are the typical applications of the 2N5416S transistor?

    The 2N5416S transistor is typically used in consumer and industrial line-operated applications, as well as in military and other high-reliability applications).

  7. What is the thermal resistance junction-to-ambient of the 2N5416S transistor?

    The thermal resistance junction-to-ambient of the 2N5416S transistor is 234 °C/W).

  8. Does the 2N5416S transistor have any special packaging options?

    Yes, the 2N5416S transistor is available in hermetically sealed packages with kovar base and nickel cap, and gold plated kovar leads).

  9. What is the power dissipation rating of the 2N5416S transistor?

    The power dissipation rating of the 2N5416S transistor is 0.75 W at TA = +25 °C).

  10. Are there any specific military qualifications for the 2N5416S transistor?

    Yes, the 2N5416S transistor is qualified to JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/485).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):50 µA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:750 mW
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
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Similar Products

Part Number 2N5416S 2N5416
Manufacturer Microchip Technology NTE Electronics, Inc
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 50 µA 1 A
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 750 mW 1 W
Frequency - Transition - 15MHz
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-39

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