2N5416S
  • Share:

Microchip Technology 2N5416S

Manufacturer No:
2N5416S
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
TRANS PNP 300V 50UA TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5416S is a silicon PNP bipolar junction transistor (BJT) produced by Microchip Technology. This transistor is designed for consumer and industrial line-operated applications, offering high reliability and performance. It is part of the 2N5415 and 2N5416 series, which are known for their robust specifications and versatility in various electronic circuits.

The 2N5416S is qualified to military standards up to JANS level per MIL-PRF-19500/485, ensuring its suitability for high-reliability applications. It is available in several package types, including TO-39 (TO-205AD) and surface mount packages like U4 and UA.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 300 V
Collector-Base Voltage VCBO 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 0.75 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance Junction-to-Ambient RӨJA 234 °C/W
Thermal Resistance Junction-to-Case RӨJC 17.5 °C/W

Key Features

  • JAN, JANTX, JANTXV, and JANS qualifications per MIL-PRF-19500/485 for high-reliability applications.
  • RoHS compliant.
  • General purpose transistor for low power applications requiring high frequency switching.
  • Low package profile available in TO-39 (TO-205AD) and surface mount packages like U4 and UA.
  • Hermetically sealed, kovar base, nickel cap with gold plated kovar leads.

Applications

  • Consumer and industrial line-operated applications.
  • Military and other high-reliability applications due to its military qualifications).
  • General purpose low power applications requiring high frequency switching).

Q & A

  1. What is the collector-emitter voltage rating of the 2N5416S transistor?

    The collector-emitter voltage rating of the 2N5416S transistor is 300 V).

  2. What are the package options available for the 2N5416S transistor?

    The 2N5416S transistor is available in TO-39 (TO-205AD) and surface mount packages like U4 and UA).

  3. Is the 2N5416S transistor RoHS compliant?

    Yes, the 2N5416S transistor is RoHS compliant).

  4. What are the operating and storage junction temperature ranges for the 2N5416S transistor?

    The operating and storage junction temperature ranges for the 2N5416S transistor are -65 to +200 °C).

  5. What is the continuous collector current rating of the 2N5416S transistor?

    The continuous collector current rating of the 2N5416S transistor is 1.0 A).

  6. What are the typical applications of the 2N5416S transistor?

    The 2N5416S transistor is typically used in consumer and industrial line-operated applications, as well as in military and other high-reliability applications).

  7. What is the thermal resistance junction-to-ambient of the 2N5416S transistor?

    The thermal resistance junction-to-ambient of the 2N5416S transistor is 234 °C/W).

  8. Does the 2N5416S transistor have any special packaging options?

    Yes, the 2N5416S transistor is available in hermetically sealed packages with kovar base and nickel cap, and gold plated kovar leads).

  9. What is the power dissipation rating of the 2N5416S transistor?

    The power dissipation rating of the 2N5416S transistor is 0.75 W at TA = +25 °C).

  10. Are there any specific military qualifications for the 2N5416S transistor?

    Yes, the 2N5416S transistor is qualified to JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/485).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):50 µA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:750 mW
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
0 Remaining View Similar

In Stock

$32.03
7

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N5416S 2N5416
Manufacturer Microchip Technology NTE Electronics, Inc
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 50 µA 1 A
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 750 mW 1 W
Frequency - Transition - 15MHz
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-39

Related Product By Categories

BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

1N5366BE3/TR12
1N5366BE3/TR12
Microchip Technology
DIODE ZENER 39V 5W T18
1N5361BE3/TR8
1N5361BE3/TR8
Microchip Technology
DIODE ZENER 27V 5W T18
1N4733A/TR
1N4733A/TR
Microchip Technology
VOLTAGE REGULATOR
2N2907AUB
2N2907AUB
Microchip Technology
TRANS PNP 60V 0.6A UB
2N5416UA
2N5416UA
Microchip Technology
NPN TRANSISTOR
PIC16F716-I/SO
PIC16F716-I/SO
Microchip Technology
IC MCU 8BIT 3.5KB FLASH 18SOIC
PIC18F4620-I/P
PIC18F4620-I/P
Microchip Technology
IC MCU 8BIT 64KB FLASH 40DIP
24AA025E48-I/SN
24AA025E48-I/SN
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT24C02-10PC
AT24C02-10PC
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
AT24C02A-10PC-2.7
AT24C02A-10PC-2.7
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
AT24C02N-10SI-2.5
AT24C02N-10SI-2.5
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT45DB321D-SU-2.5
AT45DB321D-SU-2.5
Microchip Technology
IC FLASH 32MBIT SPI 50MHZ 8SOIC