2N5416S
  • Share:

Microchip Technology 2N5416S

Manufacturer No:
2N5416S
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
TRANS PNP 300V 50UA TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5416S is a silicon PNP bipolar junction transistor (BJT) produced by Microchip Technology. This transistor is designed for consumer and industrial line-operated applications, offering high reliability and performance. It is part of the 2N5415 and 2N5416 series, which are known for their robust specifications and versatility in various electronic circuits.

The 2N5416S is qualified to military standards up to JANS level per MIL-PRF-19500/485, ensuring its suitability for high-reliability applications. It is available in several package types, including TO-39 (TO-205AD) and surface mount packages like U4 and UA.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 300 V
Collector-Base Voltage VCBO 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 0.75 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance Junction-to-Ambient RӨJA 234 °C/W
Thermal Resistance Junction-to-Case RӨJC 17.5 °C/W

Key Features

  • JAN, JANTX, JANTXV, and JANS qualifications per MIL-PRF-19500/485 for high-reliability applications.
  • RoHS compliant.
  • General purpose transistor for low power applications requiring high frequency switching.
  • Low package profile available in TO-39 (TO-205AD) and surface mount packages like U4 and UA.
  • Hermetically sealed, kovar base, nickel cap with gold plated kovar leads.

Applications

  • Consumer and industrial line-operated applications.
  • Military and other high-reliability applications due to its military qualifications).
  • General purpose low power applications requiring high frequency switching).

Q & A

  1. What is the collector-emitter voltage rating of the 2N5416S transistor?

    The collector-emitter voltage rating of the 2N5416S transistor is 300 V).

  2. What are the package options available for the 2N5416S transistor?

    The 2N5416S transistor is available in TO-39 (TO-205AD) and surface mount packages like U4 and UA).

  3. Is the 2N5416S transistor RoHS compliant?

    Yes, the 2N5416S transistor is RoHS compliant).

  4. What are the operating and storage junction temperature ranges for the 2N5416S transistor?

    The operating and storage junction temperature ranges for the 2N5416S transistor are -65 to +200 °C).

  5. What is the continuous collector current rating of the 2N5416S transistor?

    The continuous collector current rating of the 2N5416S transistor is 1.0 A).

  6. What are the typical applications of the 2N5416S transistor?

    The 2N5416S transistor is typically used in consumer and industrial line-operated applications, as well as in military and other high-reliability applications).

  7. What is the thermal resistance junction-to-ambient of the 2N5416S transistor?

    The thermal resistance junction-to-ambient of the 2N5416S transistor is 234 °C/W).

  8. Does the 2N5416S transistor have any special packaging options?

    Yes, the 2N5416S transistor is available in hermetically sealed packages with kovar base and nickel cap, and gold plated kovar leads).

  9. What is the power dissipation rating of the 2N5416S transistor?

    The power dissipation rating of the 2N5416S transistor is 0.75 W at TA = +25 °C).

  10. Are there any specific military qualifications for the 2N5416S transistor?

    Yes, the 2N5416S transistor is qualified to JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/485).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):50 µA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:2V @ 5mA, 50mA
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:750 mW
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-205AD, TO-39-3 Metal Can
Supplier Device Package:TO-39 (TO-205AD)
0 Remaining View Similar

In Stock

$32.03
7

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number 2N5416S 2N5416
Manufacturer Microchip Technology NTE Electronics, Inc
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 50 µA 1 A
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 750 mW 1 W
Frequency - Transition - 15MHz
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD) TO-39

Related Product By Categories

BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

1N5711-1
1N5711-1
Microchip Technology
DIODE SCHOTTKY 70V 33MA DO35
1N4148UR-1/TR
1N4148UR-1/TR
Microchip Technology
GLASS AXIAL SWITCHING DIODE
1N4148UB2
1N4148UB2
Microchip Technology
SWITCHING DIODE
1N4148UBCA
1N4148UBCA
Microchip Technology
SWITCHING DIODE
1N5343B/TR12
1N5343B/TR12
Microchip Technology
DIODE ZENER 7.5V 5W T18
BZV55C11/TR
BZV55C11/TR
Microchip Technology
VOLTAGE REGULATOR
PIC16F18877-I/PT
PIC16F18877-I/PT
Microchip Technology
IC MCU 8BIT 56KB FLASH 44TQFP
AT91SAM7S64C-AU
AT91SAM7S64C-AU
Microchip Technology
IC MCU 16/32BIT 64KB FLSH 64LQFP
PIC18LF6722-I/PT
PIC18LF6722-I/PT
Microchip Technology
IC MCU 8BIT 128KB FLASH 64TQFP
ATMEGA48PA-AU
ATMEGA48PA-AU
Microchip Technology
IC MCU 8BIT 4KB FLASH 32TQFP
LAN8720A-CP-ABC
LAN8720A-CP-ABC
Microchip Technology
IC TRANSCEIVER FULL 2/2 24SQFN
PD70224ILQ-TR
PD70224ILQ-TR
Microchip Technology
IC BRIDGE RECT FET BASED 40MLPQ