2N6039
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NTE Electronics, Inc 2N6039

Manufacturer No:
2N6039
Manufacturer:
NTE Electronics, Inc
Package:
Bag
Description:
TRANS NPN DARL 80V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N6039 is a silicon Darlington power transistor manufactured by NTE Electronics, Inc. It is designed in a TO-126 case and is part of a complementary pair with the 2N6036 (PNP type). This transistor is intended for general-purpose amplifier applications and offers high current handling capabilities.

Key Specifications

Parameter Value
Type NPN Silicon Darlington
Case Type TO-126
VCEO (Collector-Emitter Voltage) 80V
IC (Collector Current) 4A
ESD Ratings Machine Model: > 400 V, Human Body Model: > 8000 V

Key Features

  • High current handling capability up to 4A.
  • High collector-emitter voltage rating of 80V.
  • ESD protection: Machine Model > 400 V, Human Body Model > 8000 V.
  • Complementary pair with 2N6036 (PNP type) for balanced circuit designs.
  • TO-126 case for easy mounting and heat dissipation.

Applications

The 2N6039 is suitable for various general-purpose amplifier applications, including but not limited to:

  • Power amplifiers.
  • Switching circuits.
  • Motor control circuits.
  • High-current driver circuits.

Q & A

  1. What is the collector-emitter voltage rating of the 2N6039 transistor?

    The collector-emitter voltage rating (VCEO) of the 2N6039 transistor is 80V.

  2. What is the maximum collector current of the 2N6039 transistor?

    The maximum collector current (IC) of the 2N6039 transistor is 4A.

  3. What type of case does the 2N6039 transistor use?

    The 2N6039 transistor is housed in a TO-126 case.

  4. What are the ESD ratings for the 2N6039 transistor?

    The ESD ratings for the 2N6039 transistor are Machine Model > 400 V and Human Body Model > 8000 V.

  5. Is the 2N6039 part of a complementary pair?

    Yes, the 2N6039 is part of a complementary pair with the 2N6036 (PNP type).

  6. What are typical applications for the 2N6039 transistor?

    Typical applications include power amplifiers, switching circuits, motor control circuits, and high-current driver circuits.

  7. Who is the manufacturer of the 2N6039 transistor?

    The 2N6039 transistor is manufactured by NTE Electronics, Inc.

  8. What is the significance of the Darlington configuration in the 2N6039 transistor?

    The Darlington configuration in the 2N6039 transistor provides high current gain and is suitable for high-current applications.

  9. How does the TO-126 case benefit the 2N6039 transistor?

    The TO-126 case provides good heat dissipation and ease of mounting, making it suitable for various applications.

  10. Where can I find detailed specifications and datasheets for the 2N6039 transistor?

    Detailed specifications and datasheets can be found on the official NTE Electronics website, as well as through distributors like EIO, AiPCBA, and Wolfchip Electronics Limited.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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In Stock

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Similar Products

Part Number 2N6039 2N6059 2N6049 2N6339 2N6039G 2N6032 2N6033 2N6034 2N6036 2N6038
Manufacturer NTE Electronics, Inc NTE Electronics, Inc Microchip Technology Microchip Technology onsemi Harris Corporation Harris Corporation onsemi NTE Electronics, Inc onsemi
Product Status Active Active Active Active Obsolete Active Active Obsolete Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington - - NPN - Darlington NPN NPN PNP - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 12 A - - 4 A 50 A 40 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V 100 V - - 80 V 90 V 120 V 40 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A 3V @ 120mA, 12A - - 3V @ 40mA, 4A 1.3V @ 5A, 50A 1V @ 4A, 40A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 100µA 1mA - - 100µA 10mA 10mA 100µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 750 @ 6A, 3V - - 750 @ 2A, 3V 10 @ 50A, 2.6V 10 @ 40A, 2V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V
Power - Max 40 W 150 W - - 40 W 140 W 140 W 40 W 40 W 40 W
Frequency - Transition - 4MHz - - - - - - - -
Operating Temperature 150°C (TJ) 200°C (TJ) - - -65°C ~ 150°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount - - Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-204AA, TO-3 - - TO-225AA, TO-126-3 TO-204AE TO-204AE TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-3 - - TO-126 TO-204AE TO-204AE TO-126 TO-126 TO-126

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