Overview
The 2N6039G is a Plastic Darlington complementary silicon power transistor produced by onsemi. It is designed for general-purpose amplifier and low-speed switching applications. This transistor is part of a series that includes both PNP and NPN types, offering a range of collector-emitter voltage ratings. The 2N6039G is specifically an NPN transistor with a collector-emitter voltage rating of 80 V and a continuous collector current of 4.0 A. It is lead-free and RoHS compliant, making it suitable for a variety of modern electronic designs.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 4.0 | Adc |
| Collector Current - Peak | ICM | 8.0 | Apk |
| Base Current | IB | 100 | mAdc |
| Total Device Dissipation @ TC = 25°C | PD | 40 | W |
| Thermal Resistance, Junction-to-Case | RJC | 3.12 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 83.3 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –65 to +150 | °C |
Key Features
- ESD Ratings: Machine Model, C; > 400 V, Human Body Model, 3B; > 8000 V
- Epoxy meets UL 94 V-0 @ 0.125 in
- Pb-free and RoHS compliant
- High DC current gain (hFE) up to 15,000
- Low collector-emitter saturation voltage (VCE(sat)) of 2.0 Vdc
- Low base-emitter saturation voltage (VBE(sat)) of 4.0 Vdc
Applications
The 2N6039G is suitable for a variety of applications, including general-purpose amplifiers and low-speed switching circuits. It can be used in power supplies, motor control circuits, and other high-current applications where reliability and efficiency are crucial.
Q & A
- What is the collector-emitter voltage rating of the 2N6039G transistor?
The collector-emitter voltage rating of the 2N6039G transistor is 80 Vdc. - What is the continuous collector current of the 2N6039G transistor?
The continuous collector current of the 2N6039G transistor is 4.0 A. - Is the 2N6039G transistor Pb-free and RoHS compliant?
Yes, the 2N6039G transistor is Pb-free and RoHS compliant. - What are the thermal resistance values for the 2N6039G transistor?
The thermal resistance, junction-to-case (RJC), is 3.12 °C/W, and the thermal resistance, junction-to-ambient (RJA), is 83.3 °C/W. - What is the operating and storage junction temperature range for the 2N6039G transistor?
The operating and storage junction temperature range for the 2N6039G transistor is –65 to +150 °C. - What are the ESD ratings for the 2N6039G transistor?
The ESD ratings for the 2N6039G transistor are Machine Model, C; > 400 V, and Human Body Model, 3B; > 8000 V. - What is the DC current gain (hFE) of the 2N6039G transistor?
The DC current gain (hFE) of the 2N6039G transistor can be up to 15,000. - What are the typical values for collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat))?
The typical values are VCE(sat) = 2.0 Vdc and VBE(sat) = 4.0 Vdc. - What type of package does the 2N6039G transistor come in?
The 2N6039G transistor comes in a TO-225 package. - How many units are typically shipped in a box?
Typically, 500 units are shipped in a box.
