2N6038G
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onsemi 2N6038G

Manufacturer No:
2N6038G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 60V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N6038G is an NPN Darlington transistor manufactured by onsemi. This transistor is part of onsemi's family of plastic Darlington complementary silicon power transistors. It is designed for general-purpose amplifier and low-speed switching applications. The 2N6038G is known for its high current gain and robust electrical characteristics, making it suitable for a variety of power management and control circuits.

Key Specifications

Attribute Value
Transistor Type NPN
Maximum Continuous Collector Current 4 A
Maximum Collector Emitter Voltage 60 V
Maximum Emitter Base Voltage 5 V
Package Type TO-225AA
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain (hFE) 100
Maximum Base Emitter Saturation Voltage 4 V
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 3 V
Maximum Collector Cut-off Current 100 µA
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Maximum Power Dissipation 40 W
Dimensions 11.04 x 7.74 x 2.66 mm

Key Features

  • High Current Gain: The 2N6038G has a minimum DC current gain (hFE) of 100, making it suitable for applications requiring high current amplification.
  • Robust Electrical Characteristics: It features a maximum collector-emitter voltage of 60 V, a maximum collector current of 4 A, and a maximum power dissipation of 40 W.
  • ESD Ratings: The transistor has high ESD ratings, including Machine Model > 400 V and Human Body Model > 8000 V, ensuring robustness against electrostatic discharge.
  • Environmental Compliance: The device is Pb-free and RoHS compliant, meeting environmental standards.
  • Thermal Performance: It can operate up to a maximum junction temperature of +150 °C and has a minimum operating temperature of -65 °C.

Applications

  • General-Purpose Amplifiers: The 2N6038G is suitable for use in general-purpose amplifier circuits due to its high current gain and robust electrical characteristics.
  • Low-Speed Switching: It is designed for low-speed switching applications, making it a good choice for power management and control circuits.
  • Power Management: The transistor can be used in various power management circuits, including motor control, relay drivers, and other high-current applications.
  • Automotive Systems: With its automotive qualification to AEC-Q101 standard, it is also suitable for use in automotive systems.

Q & A

  1. What is the maximum collector-emitter voltage of the 2N6038G transistor?

    The maximum collector-emitter voltage is 60 V.

  2. What is the maximum collector current of the 2N6038G transistor?

    The maximum collector current is 4 A.

  3. What is the package type of the 2N6038G transistor?

    The package type is TO-225AA.

  4. What is the minimum DC current gain (hFE) of the 2N6038G transistor?

    The minimum DC current gain (hFE) is 100.

  5. What are the operating temperature ranges for the 2N6038G transistor?

    The operating temperature ranges from -65 °C to +150 °C.

  6. Is the 2N6038G transistor RoHS compliant?
  7. What are some common applications for the 2N6038G transistor?
  8. What is the maximum power dissipation of the 2N6038G transistor?

    The maximum power dissipation is 40 W.

  9. Does the 2N6038G transistor have any specific ESD ratings? 400 V and Human Body Model > 8000 V.

  10. What is the collector-emitter saturation voltage of the 2N6038G transistor?

    The collector-emitter saturation voltage is 3 V.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Similar Products

Part Number 2N6038G 2N6338G 2N6039G 2N6034G 2N6035G 2N6036G 2N6038
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 25 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 100 V 80 V 40 V 60 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A 1.8V @ 2.5A, 25A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 100µA 50µA 100µA 100µA 100µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 30 @ 10A, 2V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V
Power - Max 40 W 200 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - 40MHz - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-204AA, TO-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-204 (TO-3) TO-126 TO-126 TO-126 TO-126 TO-126

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