2N6038G
  • Share:

onsemi 2N6038G

Manufacturer No:
2N6038G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 60V 4A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N6038G is an NPN Darlington transistor manufactured by onsemi. This transistor is part of onsemi's family of plastic Darlington complementary silicon power transistors. It is designed for general-purpose amplifier and low-speed switching applications. The 2N6038G is known for its high current gain and robust electrical characteristics, making it suitable for a variety of power management and control circuits.

Key Specifications

Attribute Value
Transistor Type NPN
Maximum Continuous Collector Current 4 A
Maximum Collector Emitter Voltage 60 V
Maximum Emitter Base Voltage 5 V
Package Type TO-225AA
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain (hFE) 100
Maximum Base Emitter Saturation Voltage 4 V
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 3 V
Maximum Collector Cut-off Current 100 µA
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -65 °C
Maximum Power Dissipation 40 W
Dimensions 11.04 x 7.74 x 2.66 mm

Key Features

  • High Current Gain: The 2N6038G has a minimum DC current gain (hFE) of 100, making it suitable for applications requiring high current amplification.
  • Robust Electrical Characteristics: It features a maximum collector-emitter voltage of 60 V, a maximum collector current of 4 A, and a maximum power dissipation of 40 W.
  • ESD Ratings: The transistor has high ESD ratings, including Machine Model > 400 V and Human Body Model > 8000 V, ensuring robustness against electrostatic discharge.
  • Environmental Compliance: The device is Pb-free and RoHS compliant, meeting environmental standards.
  • Thermal Performance: It can operate up to a maximum junction temperature of +150 °C and has a minimum operating temperature of -65 °C.

Applications

  • General-Purpose Amplifiers: The 2N6038G is suitable for use in general-purpose amplifier circuits due to its high current gain and robust electrical characteristics.
  • Low-Speed Switching: It is designed for low-speed switching applications, making it a good choice for power management and control circuits.
  • Power Management: The transistor can be used in various power management circuits, including motor control, relay drivers, and other high-current applications.
  • Automotive Systems: With its automotive qualification to AEC-Q101 standard, it is also suitable for use in automotive systems.

Q & A

  1. What is the maximum collector-emitter voltage of the 2N6038G transistor?

    The maximum collector-emitter voltage is 60 V.

  2. What is the maximum collector current of the 2N6038G transistor?

    The maximum collector current is 4 A.

  3. What is the package type of the 2N6038G transistor?

    The package type is TO-225AA.

  4. What is the minimum DC current gain (hFE) of the 2N6038G transistor?

    The minimum DC current gain (hFE) is 100.

  5. What are the operating temperature ranges for the 2N6038G transistor?

    The operating temperature ranges from -65 °C to +150 °C.

  6. Is the 2N6038G transistor RoHS compliant?
  7. What are some common applications for the 2N6038G transistor?
  8. What is the maximum power dissipation of the 2N6038G transistor?

    The maximum power dissipation is 40 W.

  9. Does the 2N6038G transistor have any specific ESD ratings? 400 V and Human Body Model > 8000 V.

  10. What is the collector-emitter saturation voltage of the 2N6038G transistor?

    The collector-emitter saturation voltage is 3 V.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 2A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

$0.34
1,258

Please send RFQ , we will respond immediately.

Same Series
2N6036
2N6036
TRANS PNP DARL 80V 4A TO126
2N6034G
2N6034G
TRANS PNP DARL 40V 4A TO126
2N6034
2N6034
TRANS PNP DARL 40V 4A TO126
2N6036G
2N6036G
TRANS PNP DARL 80V 4A TO126
2N6038G
2N6038G
TRANS NPN DARL 60V 4A TO126
2N6039G
2N6039G
TRANS NPN DARL 80V 4A TO126
2N6035G
2N6035G
TRANS PNP DARL 60V 4A TO126

Similar Products

Part Number 2N6038G 2N6338G 2N6039G 2N6034G 2N6035G 2N6036G 2N6038
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN NPN - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 4 A 25 A 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 100 V 80 V 40 V 60 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A 1.8V @ 2.5A, 25A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 100µA 50µA 100µA 100µA 100µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V 30 @ 10A, 2V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V 750 @ 2A, 3V
Power - Max 40 W 200 W 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - 40MHz - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-204AA, TO-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-204 (TO-3) TO-126 TO-126 TO-126 TO-126 TO-126

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK