Overview
The 2N6038G is an NPN Darlington transistor manufactured by onsemi. This transistor is part of onsemi's family of plastic Darlington complementary silicon power transistors. It is designed for general-purpose amplifier and low-speed switching applications. The 2N6038G is known for its high current gain and robust electrical characteristics, making it suitable for a variety of power management and control circuits.
Key Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum Continuous Collector Current | 4 A |
Maximum Collector Emitter Voltage | 60 V |
Maximum Emitter Base Voltage | 5 V |
Package Type | TO-225AA |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Minimum DC Current Gain (hFE) | 100 |
Maximum Base Emitter Saturation Voltage | 4 V |
Maximum Collector Base Voltage | 60 V |
Maximum Collector Emitter Saturation Voltage | 3 V |
Maximum Collector Cut-off Current | 100 µA |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -65 °C |
Maximum Power Dissipation | 40 W |
Dimensions | 11.04 x 7.74 x 2.66 mm |
Key Features
- High Current Gain: The 2N6038G has a minimum DC current gain (hFE) of 100, making it suitable for applications requiring high current amplification.
- Robust Electrical Characteristics: It features a maximum collector-emitter voltage of 60 V, a maximum collector current of 4 A, and a maximum power dissipation of 40 W.
- ESD Ratings: The transistor has high ESD ratings, including Machine Model > 400 V and Human Body Model > 8000 V, ensuring robustness against electrostatic discharge.
- Environmental Compliance: The device is Pb-free and RoHS compliant, meeting environmental standards.
- Thermal Performance: It can operate up to a maximum junction temperature of +150 °C and has a minimum operating temperature of -65 °C.
Applications
- General-Purpose Amplifiers: The 2N6038G is suitable for use in general-purpose amplifier circuits due to its high current gain and robust electrical characteristics.
- Low-Speed Switching: It is designed for low-speed switching applications, making it a good choice for power management and control circuits.
- Power Management: The transistor can be used in various power management circuits, including motor control, relay drivers, and other high-current applications.
- Automotive Systems: With its automotive qualification to AEC-Q101 standard, it is also suitable for use in automotive systems.
Q & A
- What is the maximum collector-emitter voltage of the 2N6038G transistor?
The maximum collector-emitter voltage is 60 V.
- What is the maximum collector current of the 2N6038G transistor?
The maximum collector current is 4 A.
- What is the package type of the 2N6038G transistor?
The package type is TO-225AA.
- What is the minimum DC current gain (hFE) of the 2N6038G transistor?
The minimum DC current gain (hFE) is 100.
- What are the operating temperature ranges for the 2N6038G transistor?
The operating temperature ranges from -65 °C to +150 °C.
- Is the 2N6038G transistor RoHS compliant?
- What are some common applications for the 2N6038G transistor?
- What is the maximum power dissipation of the 2N6038G transistor?
The maximum power dissipation is 40 W.
- Does the 2N6038G transistor have any specific ESD ratings?
400 V and Human Body Model > 8000 V. - What is the collector-emitter saturation voltage of the 2N6038G transistor?
The collector-emitter saturation voltage is 3 V.