Overview
The TIP132 is a silicon Epitaxial-Base NPN power transistor manufactured by STMicroelectronics. It is configured in a monolithic Darlington configuration and is housed in a Jedec TO-220 plastic package. This transistor is designed for use in power linear and switching applications. The TIP132 has a complementary PNP type, the TIP137, and another PNP type, the TIP135.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage (IE = 0) | VCBO | 100 | V |
| Collector-Emitter Voltage (IB = 0) | VCEO | 100 | V |
| Emitter-Base Voltage (IC = 0) | VEBO | 5 | V |
| Collector Current | IC | 8 | A |
| Collector Peak Current | ICM | 12 | A |
| Base Current | IB | 0.3 | A |
| Total Dissipation at Tcase ≤ 25°C | Ptot | 70 | W |
| Storage Temperature | Tstg | -65 to 150 | °C |
| Max. Operating Junction Temperature | Tj | 150 | °C |
| Thermal Resistance Junction-case | Rthj-case | 1.78 | °C/W |
| Thermal Resistance Junction-ambient | Rthj-amb | 63.5 | °C/W |
| Collector Cut-off Current (IB = 0) | ICEO | 0.5 | mA |
| Collector-Emitter Sustaining Voltage (IB = 0) | VCEO(sus) | 100 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.0 | V |
| Base-Emitter Voltage | VBE | 2.5 | V |
| DC Current Gain | hFE | 1000 (Min) @ IC = 4 A |
Key Features
- High DC Current Gain: hFE = 1000 (Min) @ IC = 4 A.
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 100 V (Min).
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0 V (Max) @ IC = 4 A.
- Monolithic Darlington configuration with built-in base-emitter shunt resistors.
- Pb-Free packages available.
- High collector current capability: up to 8 A continuous and 12 A peak.
Applications
The TIP132 is designed for use in various power linear and switching applications, including:
- General-purpose amplifier applications.
- Low-speed switching applications.
- Industrial equipment.
Q & A
- What is the TIP132 transistor?
The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, housed in a Jedec TO-220 plastic package.
- What are the maximum collector-emitter and collector-base voltages for the TIP132?
The maximum collector-emitter voltage (VCEO) and collector-base voltage (VCBO) are both 100 V.
- What is the maximum collector current of the TIP132?
The maximum continuous collector current (IC) is 8 A, and the peak collector current (ICM) is 12 A.
- What is the thermal resistance junction-case for the TIP132?
The thermal resistance junction-case (Rthj-case) is 1.78 °C/W.
- What are the storage and operating junction temperatures for the TIP132?
The storage temperature range is -65 to 150 °C, and the maximum operating junction temperature (Tj) is 150 °C.
- What is the DC current gain of the TIP132?
The DC current gain (hFE) is 1000 (Min) @ IC = 4 A.
- What is the collector-emitter saturation voltage of the TIP132?
The collector-emitter saturation voltage (VCE(sat)) is 2.0 V (Max) @ IC = 4 A.
- Is the TIP132 available in Pb-Free packages?
- What are the typical applications of the TIP132 transistor?
The TIP132 is used in general-purpose amplifier and low-speed switching applications, as well as in industrial equipment.
- What is the complementary PNP type of the TIP132?
The complementary PNP type of the TIP132 is the TIP137.
