TIP137
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onsemi TIP137

Manufacturer No:
TIP137
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP DARL 100V 8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP137 is a PNP Darlington transistor manufactured by onsemi. It is part of the TIP131, TIP132, and TIP137 series of Darlington complementary silicon power transistors. These transistors are designed for general-purpose amplifier and low-speed switching applications. The TIP137 is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of power management and control circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCB 100 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 8.0 Adc
Base Current IB 300 mAdc
Total Power Dissipation @ TC = 25°C PD 70 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 °C
DC Current Gain (hFE) hFE 1000 to 15000
Collector-Emitter Saturation Voltage VCE(sat) 2.0 to 3.0 Vdc
Thermal Resistance, Junction-to-Case RJC 1.78 °C/W

Key Features

  • High DC Current Gain: hFE = 1000 to 15000 at IC = 4.0 Adc
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0 Vdc (Max) at IC = 4.0 Adc and 3.0 Vdc (Max) at IC = 6.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages Available
  • High Collector-Emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (Min)

Applications

The TIP137 is designed for general-purpose amplifier and low-speed switching applications. It is suitable for use in various power management and control circuits, including:

  • Power amplifiers
  • Switching circuits
  • Motor control systems
  • Relay drivers
  • Other applications requiring high current gain and low saturation voltage

Q & A

  1. What is the collector-emitter voltage rating of the TIP137?

    The collector-emitter voltage rating of the TIP137 is 100 Vdc.

  2. What is the maximum collector current of the TIP137?

    The maximum collector current of the TIP137 is 8.0 Adc.

  3. What is the typical DC current gain (hFE) of the TIP137?

    The typical DC current gain (hFE) of the TIP137 is 1000 to 15000.

  4. What is the collector-emitter saturation voltage of the TIP137?

    The collector-emitter saturation voltage of the TIP137 is 2.0 Vdc (Max) at IC = 4.0 Adc and 3.0 Vdc (Max) at IC = 6.0 Adc.

  5. What is the operating junction temperature range of the TIP137?

    The operating junction temperature range of the TIP137 is -65 to +150°C.

  6. What package type is the TIP137 available in?

    The TIP137 is available in the TO-220 package.

  7. Is the TIP137 Pb-free?
  8. What are some common applications of the TIP137?

    The TIP137 is commonly used in general-purpose amplifier and low-speed switching applications, including power amplifiers, switching circuits, motor control systems, and relay drivers.

  9. Can the TIP137 be used in high-speed switching applications?

    No, the TIP137 is not designed for high-speed switching applications but is suitable for low-speed switching.

  10. What are some equivalent transistors for the TIP137?

    Some equivalent transistors for the TIP137 include the 2N6042, BD544C, BD546C, and others as listed in the datasheet.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 30mA, 6A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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Same Series
TIP137
TIP137
TRANS PNP DARL 100V 8A TO220AB
TIP135
TIP135
TRANS PNP DARL 60V 8A TO220

Similar Products

Part Number TIP137 TIP147 TIP137G TIP107 TIP117 TIP127 TIP130 TIP131 TIP132 TIP135 TIP136
Manufacturer onsemi NTE Electronics, Inc onsemi NTE Electronics, Inc Fairchild Semiconductor NTE Electronics, Inc Central Semiconductor Corp onsemi STMicroelectronics STMicroelectronics Central Semiconductor Corp
Product Status Obsolete Active Active Active Obsolete Active Obsolete Obsolete Active Obsolete Obsolete
Transistor Type PNP - Darlington PNP PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington - NPN - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 10 A 8 A 8 A 2 A 5 A - 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V - 80 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 4V @ 30mA, 6A - 4V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 4V @ 20mA, 5A - 3V @ 30mA, 6A 4V @ 30mA, 6A 4V @ 30mA, 6A -
Current - Collector Cutoff (Max) 500µA - 500µA 50µA 2mA 500µA - 500µA 500µA 500µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 5A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V - 1000 @ 4A, 4V 1000 @ 4A, 4V 1000 @ 4A, 4V -
Power - Max 2 W 125 W 2 W 2 W 2 W 2 W - 2 W 2 W 2 W 70 W
Frequency - Transition - - - - - - - - - - -
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) - -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-218-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-218 TO-220 TO-220 TO-220-3 TO-220 TO-220-3 TO-220 TO-220 TO-220 TO-220-3

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