TIP132G
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onsemi TIP132G

Manufacturer No:
TIP132G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP132G is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, manufactured by onsemi. Although this component is currently obsolete, it was designed for general-purpose amplifier and low-speed switching applications. The TIP132G is part of a family of Darlington transistors that include the TIP131 (NPN) and TIP137 (PNP) as complementary devices.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 8 A
Collector Peak Current (ICM) 12 A
Base Current (IB) 0.3 A
Total Dissipation at Tcase ≤ 25°C 70 W
Storage Temperature -65 to 150 °C
Maximum Operating Junction Temperature 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0 V at IC = 4 A, IB = 16 mA V
DC Current Gain (hFE) 500 to 1500 at IC = 1 A, VCE = 4 V
Package Type TO-220-3

Key Features

  • High DC Current Gain (hFE = 2500 Typ at Ic = 4.0 Adc)
  • Low Collector-Emitter Saturation Voltage (2.0 Vdc Max at Ic = 4.0 Adc)
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220AB Package
  • Pb-Free Packages Available
  • High Collector-Emitter Sustaining Voltage (100 Vdc Min for TIP132)

Applications

The TIP132G is intended for use in various power linear and switching applications, including:

  • General-purpose amplifiers
  • Low-speed switching applications
  • Industrial equipment

Q & A

  1. What is the TIP132G transistor used for?

    The TIP132G is used for general-purpose amplifier and low-speed switching applications.

  2. What is the collector-emitter voltage (VCEO) of the TIP132G?

    The collector-emitter voltage (VCEO) is 60 V.

  3. What is the maximum collector current (IC) of the TIP132G?

    The maximum collector current (IC) is 8 A.

  4. What is the maximum operating junction temperature of the TIP132G?

    The maximum operating junction temperature is 150°C.

  5. What package type does the TIP132G come in?

    The TIP132G comes in a TO-220-3 package.

  6. Is the TIP132G still in production?

    No, the TIP132G is obsolete and no longer manufactured.

  7. What are some possible substitutes for the TIP132G?

    Similar substitutes include the TIP102G from onsemi.

  8. What is the DC current gain (hFE) of the TIP132G?

    The DC current gain (hFE) ranges from 500 to 1500 at IC = 1 A, VCE = 4 V.

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the TIP132G?

    The collector-emitter saturation voltage (VCE(sat)) is 2.0 V at IC = 4 A, IB = 16 mA.

  10. Is the TIP132G Pb-free?

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 30mA, 6A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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In Stock

$0.40
1,980

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Same Series
TIP131
TIP131
TRANS NPN DARL 80V 8A TO220
TIP131G
TIP131G
TRANS NPN DARL 80V 8A TO220

Similar Products

Part Number TIP132G TIP142G TIP137G TIP102G TIP112G TIP122G TIP131G TIP132
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Obsolete Active Active Active Active Active Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 8 A 10 A 8 A 8 A 2 A 5 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 30mA, 6A 3V @ 40mA, 10A 4V @ 30mA, 6A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 3V @ 30mA, 6A 4V @ 30mA, 6A
Current - Collector Cutoff (Max) 500µA 2mA 500µA 50µA 2mA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 5A, 4V 1000 @ 4A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 2 W 125 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-247-3 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

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