TIP112TU
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onsemi TIP112TU

Manufacturer No:
TIP112TU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 2A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP112TU is an NPN Epitaxial Silicon Darlington Transistor produced by onsemi (formerly Fairchild Semiconductor). This transistor is designed in a monolithic Darlington configuration and is housed in a TO-220 plastic package. It is intended for use in medium power linear and switching applications, making it a versatile component for various industrial equipment.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 100 V
Collector-Emitter Voltage (VCEO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 2 A
Collector Peak Current (ICM) 4 A
Base Current (IB) 50 mA
Total Dissipation at Tcase ≤ 25°C 2 W
Storage Temperature -65 to 150 °C
Max. Operating Junction Temperature 150 °C
Collector-Emitter Saturation Voltage (VCE(sat)) 2.5 V
Base-Emitter On Voltage (VBE(on)) 2.8 V
DC Current Gain (hFE) 1000 (IC = 1 A), 500 (IC = 2 A)

Key Features

  • Monolithic Darlington configuration for high current gain and low base current requirements.
  • High DC current gain: hFE = 1000 at VCE = 4 V, IC = 1 A (minimum).
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.5 V at IC = 2 A, IB = 8 mA.
  • Integrated antiparallel collector-emitter diode.
  • TO-220 plastic package for good thermal dissipation.
  • Complementary PNP types available (TIP115 and TIP117).

Applications

The TIP112TU is suitable for various medium power linear and switching applications in industrial equipment, including:

  • Linear amplifiers and power supplies.
  • Switching regulators and motor control circuits.
  • Relay drivers and solenoid control.
  • General-purpose power switching applications.

Q & A

  1. What is the collector-emitter voltage rating of the TIP112TU?

    The collector-emitter voltage (VCEO) rating of the TIP112TU is 100 V.

  2. What is the maximum collector current for the TIP112TU?

    The maximum collector current (IC) for the TIP112TU is 2 A.

  3. What is the typical DC current gain of the TIP112TU?

    The typical DC current gain (hFE) of the TIP112TU is 1000 at VCE = 4 V, IC = 1 A.

  4. What is the collector-emitter saturation voltage of the TIP112TU?

    The collector-emitter saturation voltage (VCE(sat)) of the TIP112TU is 2.5 V at IC = 2 A, IB = 8 mA.

  5. What is the maximum operating junction temperature for the TIP112TU?

    The maximum operating junction temperature (Tj) for the TIP112TU is 150°C.

  6. What package type is the TIP112TU available in?

    The TIP112TU is available in a TO-220 plastic package.

  7. Are there complementary PNP types available for the TIP112TU?

    Yes, the complementary PNP types for the TIP112TU are the TIP115 and TIP117.

  8. What are some typical applications for the TIP112TU?

    The TIP112TU is typically used in medium power linear and switching applications, including linear amplifiers, switching regulators, motor control circuits, and general-purpose power switching.

  9. What is the storage temperature range for the TIP112TU?

    The storage temperature range for the TIP112TU is -65 to 150°C.

  10. Is the TIP112TU still in production?

    No, the TIP112TU is no longer in production and is considered obsolete.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Same Series
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TIP112TU
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Similar Products

Part Number TIP112TU TIP115TU TIP116TU TIP122TU TIP142TU TIP102TU TIP110TU TIP111TU
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Active Obsolete Active Obsolete Active
Transistor Type NPN - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 2 A 5 A 10 A 8 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 60 V 80 V 100 V 100 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 3V @ 40mA, 10A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA 2mA 500µA 2mA 50µA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 5A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 W 2 W 2 W 2 W 80 W 2 W 2 W 2 W
Frequency - Transition - - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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