Overview
The MJD50T4G is a high-voltage power transistor manufactured by onsemi. This NPN bipolar transistor is designed for surface mount applications and is available in the TO-252-3 (DPAK) package. It is characterized by its high collector-emitter voltage (VCEO) of 400 V and a rated collector current of 1 A, making it suitable for various high-power applications.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Polarity | NPN | |
| Type | Power Transistor | |
| Collector-Emitter Voltage (VCEO) | 400 | Vdc |
| Collector Current (IC) - Continuous | 1 | A |
| Collector Current (IC) - Peak | 2 | A |
| Base Current (IB) | 0.6 | A |
| Total Power Dissipation (PD) @ TC = 25°C | 1.56 | W |
| Operating and Storage Junction Temperature Range | −65 to +150 | °C |
| ESD - Human Body Model (HBM) | > 8000 | V |
| ESD - Machine Model (MM) | > 400 | V |
| Package Style | TO-252-3 (DPAK) | |
| Mounting Method | Tab Mount |
Key Features
- Lead formed for surface mount applications in plastic sleeves (no suffix)
- Electrically similar to popular TIP47 and TIP50 transistors
- Collector-emitter voltage (VCEO) of 400 V (min)
- Rated collector current of 1 A
- Epoxy meets UL 94 V-0 @ 0.125 in
- ESD ratings: Human Body Model > 8000 V, Machine Model > 400 V
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free packages and RoHS compliant
Applications
- Switching applications
- Audio output amplifiers
- Line-operated audio output amplifiers
- Switchmode supply drivers
Q & A
- What is the collector-emitter voltage (VCEO) of the MJD50T4G transistor?
The collector-emitter voltage (VCEO) of the MJD50T4G transistor is 400 V.
- What is the rated collector current of the MJD50T4G transistor?
The rated collector current of the MJD50T4G transistor is 1 A.
- In what package is the MJD50T4G transistor available?
The MJD50T4G transistor is available in the TO-252-3 (DPAK) package.
- What are the ESD ratings for the MJD50T4G transistor?
The ESD ratings for the MJD50T4G transistor are Human Body Model > 8000 V and Machine Model > 400 V.
- Is the MJD50T4G transistor RoHS compliant?
- What are some common applications for the MJD50T4G transistor?
The MJD50T4G transistor is commonly used in switching applications, audio output amplifiers, and switchmode supply drivers.
- What is the operating and storage junction temperature range for the MJD50T4G transistor?
The operating and storage junction temperature range for the MJD50T4G transistor is −65 to +150°C.
- Is the MJD50T4G transistor suitable for automotive applications?
- What is the total power dissipation of the MJD50T4G transistor at TC = 25°C?
The total power dissipation of the MJD50T4G transistor at TC = 25°C is 1.56 W.
- What is the thermal resistance junction-to-case (RθJC) for the MJD50T4G transistor?
The thermal resistance junction-to-case (RθJC) for the MJD50T4G transistor is 8.33°C/W.
