Overview
The NJVMJD50T4G is a bipolar junction transistor (BJT) with an NPN-type configuration, manufactured by ON Semiconductor. This transistor is designed for applications requiring high voltage and current handling capabilities. It features a positively charged layer between two negatively charged layers, allowing current to flow from the collector terminal to the emitter terminal.
The NJVMJD50T4G is housed in a DPAK-3 (TO-252-3) package, which offers a compact and efficient design suitable for surface mount applications. It is widely used in various electronic circuits that demand reliable and efficient performance.
Key Specifications
| Parameter | Value |
|---|---|
| Status | Active |
| Package Type | DPAK-3 (TO-252-3) |
| MSL Type | 1 (Unlimited) |
| Container Type | REEL |
| Container Qty. | 2500 |
| Polarity | NPN |
| Type | General Purpose |
| VCE(sat) Max (V) | 1 |
| IC Cont. (A) | 1 |
| VCEO Min (V) | 400 |
| VCBO (V) | 500 |
| VEBO (V) | 5 |
| VBE(on) (V) | 1.5 |
| hFE Min | 30 |
| hFE Max | 150 |
| fT Min (MHz) | 10 |
| PTM Max (W) | 15 |
Key Features
- High Voltage Rating: The NJVMJD50T4G has a maximum collector-emitter voltage (VCE) of 400V and a maximum collector-base voltage (VCB) of 500V, making it suitable for high-voltage applications.
- High Current Capability: It can handle a maximum collector current (IC) of 1A, which is ideal for applications requiring high current handling.
- Compact Package: Housed in a DPAK-3 package, it offers a space-saving design for easy integration into various circuits.
- Enhanced Thermal Performance: With a maximum power dissipation of 15W, it ensures optimal heat dissipation and reliability.
- Fast Transition Frequency: The transistor has a transition frequency (fT) of 10MHz, making it suitable for high-frequency switching applications.
Applications
- Power Supplies: Ideal for power management and control in DC power supplies due to its high voltage and current handling capabilities.
- Motor Drives: Used in motor drive circuits for efficient and reliable operation.
- LED Lighting: Suitable for LED lighting systems and drivers where fast switching is required.
Q & A
- Q: What is the NJVMJD50T4G transistor?
A: The NJVMJD50T4G is a bipolar junction transistor (BJT) with an NPN-type configuration, designed for high-voltage and high-current applications.
- Q: What is the maximum collector current rating of the NJVMJD50T4G?
A: The NJVMJD50T4G can handle a maximum collector current of 1A.
- Q: What is the maximum collector-emitter voltage rating of the NJVMJD50T4G?
A: The maximum collector-emitter voltage (VCE) rating is 400V.
- Q: What is the transition frequency of the NJVMJD50T4G?
A: The transition frequency (fT) of the NJVMJD50T4G is 10MHz.
- Q: What package type is the NJVMJD50T4G housed in?
A: The NJVMJD50T4G is housed in a DPAK-3 (TO-252-3) package.
- Q: What are the typical applications of the NJVMJD50T4G?
A: It is commonly used in power supplies, motor drives, and LED lighting systems.
- Q: How does the NJVMJD50T4G work?
A: The NJVMJD50T4G works by acting as a switch to control the flow of current in a circuit, with the base terminal controlling the flow between the collector and emitter terminals.
- Q: What are the pros of using the NJVMJD50T4G?
A: It offers high current capability, fast switching speed, low on-resistance, and a compact package design.
- Q: Are there any equivalents or alternatives to the NJVMJD50T4G?
A: Yes, alternatives include the FDPF18N50T from Fairchild Semiconductor and the IRFZ44N from Infineon Technologies.
- Q: What is the maximum operating junction temperature of the NJVMJD50T4G?
A: The maximum operating junction temperature (TJ) is 150°C.
- Q: Is the NJVMJD50T4G RoHS compliant?
A: Yes, the NJVMJD50T4G is lead-free and RoHS compliant.
