Overview
The MJD47T4G is a high-voltage power transistor manufactured by ON Semiconductor. This NPN bipolar junction transistor (BJT) is designed for various high-power applications, including line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications. It is electrically similar to popular transistors like the TIP47 and TIP50, making it a versatile choice for many electronic designs. The transistor is packaged in a DPAK (TO-252-3) case, which is lead-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 250 | Vdc |
| Collector-Base Voltage | VCB | - | 350 | Vdc |
| Emitter-Base Voltage | VEB | - | 5 | Vdc |
| Collector Current - Continuous | IC | - | 1 | Adc |
| Collector Current - Peak | ICM | - | 2 | Adc |
| Base Current | IB | - | 0.6 | Adc |
| Total Power Dissipation @ TC = 25°C | PD | - | 15 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 | 150 | °C |
| Thermal Resistance Junction-to-Case | RJC | - | 8.33 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | - | 80 | °C/W |
| Lead Temperature for Soldering Purpose | TL | - | 260 | °C |
| DC Current Gain (hFE) @ Ic, Vce | hFE | 30 | 150 | - |
| Collector-Emitter Saturation Voltage @ Ib, Ic | VCE(sat) | - | 1 | Vdc |
| Base-Emitter On Voltage @ Ic, Vce | VBE(on) | - | 1.5 | Vdc |
| Current Gain Bandwidth Product | fT | - | 10 | MHz |
Key Features
- High Voltage Capability: The MJD47T4G has a collector-emitter voltage rating of 250V, making it suitable for high-voltage applications.
- Surface Mount Package: The transistor is packaged in a DPAK (TO-252-3) case, which is lead-free and RoHS compliant, facilitating surface mount applications.
- High Current Handling: It can handle a continuous collector current of 1A and a peak collector current of 2A, making it robust for power-intensive applications.
- Low Saturation Voltage: The collector-emitter saturation voltage is as low as 1V, which helps in reducing power losses in switching applications.
- Wide Operating Temperature Range: The transistor operates over a junction temperature range of -65°C to 150°C, ensuring reliability in various environmental conditions.
- AEC-Q101 Qualified: The NJV prefix versions are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other demanding applications).
Applications
- Line Operated Audio Output Amplifiers: The MJD47T4G is designed for use in audio output amplifiers that operate directly from the AC power line.
- Switch-Mode Power Supply Drivers: It is suitable for driving switch-mode power supplies due to its high voltage and current handling capabilities).
- Other Switching Applications: The transistor can be used in various other switching applications where high reliability and performance are required).
- Automotive and Industrial Applications: The AEC-Q101 qualified versions make it a reliable choice for automotive and industrial applications that require high performance and durability).
Q & A
- What is the collector-emitter voltage rating of the MJD47T4G transistor?
The collector-emitter voltage rating of the MJD47T4G transistor is 250V).
- What is the maximum continuous collector current of the MJD47T4G?
The maximum continuous collector current of the MJD47T4G is 1A).
- What is the package type of the MJD47T4G transistor?
The MJD47T4G transistor is packaged in a DPAK (TO-252-3) case).
- Is the MJD47T4G transistor RoHS compliant?
Yes, the MJD47T4G transistor is lead-free and RoHS compliant).
- What are the typical applications of the MJD47T4G transistor?
The MJD47T4G transistor is typically used in line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications).
- What is the operating temperature range of the MJD47T4G transistor?
The operating temperature range of the MJD47T4G transistor is from -65°C to 150°C).
- What is the thermal resistance junction-to-case of the MJD47T4G transistor?
The thermal resistance junction-to-case of the MJD47T4G transistor is 8.33°C/W).
- Is the MJD47T4G transistor suitable for automotive applications?
Yes, the NJV prefix versions of the MJD47T4G transistor are AEC-Q101 qualified and PPAP capable, making them suitable for automotive applications).
- What is the collector-emitter saturation voltage of the MJD47T4G transistor?
The collector-emitter saturation voltage of the MJD47T4G transistor is as low as 1V).
- What is the current gain bandwidth product of the MJD47T4G transistor?
The current gain bandwidth product of the MJD47T4G transistor is 10 MHz).
