MJD50T4G
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onsemi MJD50T4G

Manufacturer No:
MJD50T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD50T4G is a high-voltage NPN bipolar power transistor manufactured by onsemi. This transistor is designed for various high-power applications, including line-operated audio output amplifiers and switch-mode power supply drivers. It is housed in a 3-pin DPAK (TO-252-2) package, making it suitable for surface mount applications. The MJD50T4G is known for its robust performance and reliability in handling high voltage and current requirements.

Key Specifications

ParameterValue
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Collector-Base Voltage (VCB)400 V
Collector-Emitter Voltage (VCE)400 V
Emitter-Base Voltage (VEB)5 V
Collector Current (IC)1 A
Power Dissipation (PD)1.56 W
Operating Frequency10 MHz
Package TypeTO-252-2 (DPAK), 3-pin

Key Features

  • High voltage capability: 400 V collector-base and collector-emitter voltage.
  • High current handling: 1 A collector current.
  • High power dissipation: 1.56 W.
  • Surface mount DPAK package for compact design.
  • Suitable for high-frequency applications up to 10 MHz.

Applications

  • Line-operated audio output amplifiers.
  • Switch-mode power supply drivers.
  • General-purpose amplifier applications.
  • Other high-power electronic circuits requiring high voltage and current handling.

Q & A

  1. What is the MJD50T4G transistor type? The MJD50T4G is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector-base voltage of the MJD50T4G? The maximum collector-base voltage is 400 V.
  3. What is the maximum collector current of the MJD50T4G? The maximum collector current is 1 A.
  4. In what package is the MJD50T4G housed? The MJD50T4G is housed in a 3-pin TO-252-2 (DPAK) package.
  5. What is the power dissipation of the MJD50T4G? The power dissipation is 1.56 W.
  6. What are some common applications of the MJD50T4G? Common applications include line-operated audio output amplifiers and switch-mode power supply drivers.
  7. What is the operating frequency range of the MJD50T4G? The MJD50T4G can operate up to 10 MHz.
  8. Is the MJD50T4G suitable for surface mount applications? Yes, the MJD50T4G is suitable for surface mount applications due to its DPAK package.
  9. What is the emitter-base voltage of the MJD50T4G? The emitter-base voltage is 5 V.
  10. Who is the manufacturer of the MJD50T4G? The MJD50T4G is manufactured by onsemi.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
Current - Collector Cutoff (Max):200µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 10V
Power - Max:1.56 W
Frequency - Transition:10MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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$0.73
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Similar Products

Part Number MJD50T4G MJD350T4G MJD50T4
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 500 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V 300 V 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A - 1V @ 200mA, 1A
Current - Collector Cutoff (Max) 200µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 50mA, 10V 30 @ 300mA, 10V
Power - Max 1.56 W 15 W 15 W
Frequency - Transition 10MHz - 10MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK

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