Overview
The MJD350T4G is a high-voltage power transistor produced by onsemi, designed for various high-power applications. This PNP transistor is housed in the DPAK (TO-252) package, which is suitable for surface mount applications. The device is electrically similar to the popular MJE350 and is RoHS compliant, making it environmentally friendly and suitable for modern electronic designs.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Collector-Emitter Voltage | VCEO | 300 Vdc |
| Collector-Base Voltage | VCB | 300 Vdc |
| Emitter-Base Voltage | VEB | 3 Vdc |
| Continuous Collector Current | IC | 0.5 Adc |
| Peak Collector Current | ICM | 0.75 Adc |
| Total Power Dissipation @ TC = 25°C | PD | 15 W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 °C |
| Thermal Resistance, Junction-to-Case | RJC | 8.33 °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 80 °C/W |
| DC Current Gain (IC = 50 mA, VCE = 10 V) | hFE | 30 to 240 |
| Collector-Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA) | VCE(sat) | 1 V |
Key Features
- High-voltage operation with VCEO of 300 Vdc.
- Lead formed for surface mount applications in plastic sleeves.
- Electrically similar to popular MJE350 transistors.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- High DC current gain (hFE) ranging from 30 to 240.
- Low collector-emitter saturation voltage (VCE(sat)) of 1 V.
Applications
The MJD350T4G is designed for various high-power applications, including:
- Line-operated audio output amplifiers.
- Switchmode power supply drivers.
- Other switching applications.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage of the MJD350T4G?
The maximum collector-emitter voltage (VCEO) is 300 Vdc.
- What is the continuous collector current rating of the MJD350T4G?
The continuous collector current (IC) is 0.5 Adc.
- Is the MJD350T4G RoHS compliant?
- What is the thermal resistance, junction-to-case (RJC) of the MJD350T4G?
The thermal resistance, junction-to-case (RJC) is 8.33 °C/W.
- What are the typical applications of the MJD350T4G?
The MJD350T4G is typically used in line-operated audio output amplifiers, switchmode power supply drivers, and other switching applications.
- Is the MJD350T4G suitable for automotive applications?
- What is the DC current gain (hFE) of the MJD350T4G?
The DC current gain (hFE) ranges from 30 to 240.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MJD350T4G?
The collector-emitter saturation voltage (VCE(sat)) is 1 V.
- What is the operating and storage junction temperature range of the MJD350T4G?
The operating and storage junction temperature range is −65 to +150 °C.
- What package type is the MJD350T4G available in?
The MJD350T4G is available in the DPAK (TO-252) package.
