MJD350T4
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STMicroelectronics MJD350T4

Manufacturer No:
MJD350T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANS PNP 300V 0.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD350T4 is a PNP bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is part of the MJD340 and MJD350 series, which form complementary NPN-PNP pairs. These transistors are produced using Medium Voltage Epitaxial-Planar technology, resulting in rugged, high-performance, and cost-effective devices. They are packaged in the TO-252 (DPAK) surface-mounting format, making them suitable for a variety of applications requiring medium voltage capability and high reliability.

Key Specifications

ParameterValueUnit
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current (IC)0.5 AA
Collector-Emitter Voltage (VCEO)300 VV
Emitter-Base Voltage (VEBO)3 VV
Collector Peak Current (ICM)0.75 AA
Total Power Dissipation at Tcase ≤ 25°C (Ptot)15 WW
Storage Temperature (Tstg)-65 to 150 °C°C
Max Operating Junction Temperature (Tj)150 °C°C
Thermal Resistance Junction-case (Rthj-case)8.33 °C/W°C/W
Thermal Resistance Junction-ambient (Rthj-amb)100 °C/W°C/W
DC Current Gain (hFE)30 to 240

Key Features

  • Complementary PNP-NPN pairs with the MJD340.
  • Medium Voltage Epitaxial-Planar technology for high performance and ruggedness.
  • Surface-mounting TO-252 (DPAK) package.
  • High DC current gain (hFE) ranging from 30 to 240.
  • Low collector-emitter saturation voltage.
  • High total power dissipation capability.

Applications

  • Solenoid and relay drivers.
  • General-purpose switching and amplifier applications.
  • Any application requiring medium voltage capability and high reliability.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the MJD350T4?
    The maximum collector-emitter voltage (VCEO) is 300 V.
  2. What is the maximum DC collector current (IC) of the MJD350T4?
    The maximum DC collector current (IC) is 0.5 A.
  3. What is the storage temperature range for the MJD350T4?
    The storage temperature range is -65 to 150 °C.
  4. What is the maximum operating junction temperature (Tj) for the MJD350T4?
    The maximum operating junction temperature (Tj) is 150 °C.
  5. What package type is used for the MJD350T4?
    The MJD350T4 is packaged in the TO-252 (DPAK) surface-mounting format.
  6. What are the typical applications of the MJD350T4?
    The MJD350T4 is typically used in solenoid and relay drivers, and general-purpose switching and amplifier applications.
  7. What technology is used to manufacture the MJD350T4?
    The MJD350T4 is manufactured using Medium Voltage Epitaxial-Planar technology.
  8. What is the thermal resistance junction-case (Rthj-case) for the MJD350T4?
    The thermal resistance junction-case (Rthj-case) is 8.33 °C/W.
  9. What is the total power dissipation at Tcase ≤ 25°C (Ptot) for the MJD350T4?
    The total power dissipation at Tcase ≤ 25°C (Ptot) is 15 W.
  10. What is the DC current gain (hFE) range for the MJD350T4?
    The DC current gain (hFE) ranges from 30 to 240.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
Power - Max:15 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD350T4 MJD350T4G MJD50T4 MJD350TF MJD340T4
Manufacturer STMicroelectronics onsemi STMicroelectronics onsemi STMicroelectronics
Product Status Active Active Obsolete Obsolete Active
Transistor Type PNP PNP NPN PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 1 A 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 400 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic - - 1V @ 200mA, 1A - -
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA 100µA 100µA 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V 30 @ 50mA, 10V 30 @ 300mA, 10V 30 @ 50mA, 10V 30 @ 50mA, 10V
Power - Max 15 W 15 W 15 W 15 W 15 W
Frequency - Transition - - 10MHz - -
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK D-Pak DPAK

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