MJD50T4
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STMicroelectronics MJD50T4

Manufacturer No:
MJD50T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD50T4 is an NPN Bipolar Power Transistor manufactured by onsemi (previously part of STMicroelectronics). This transistor is designed for various applications including line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications. It is electrically similar to popular transistors like the TIP47 and TIP50. The MJD50T4 is available in different package types, including lead-formed versions for surface mount applications and straight lead versions in plastic sleeves.

Key Specifications

Parameter Value
Polarity NPN
Collector-Emitter Voltage (VCEO) 400 V (Min)
Collector-Base Voltage (VCBO) 500 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Saturation Voltage (VCE(sat)) 1 V
Base-Emitter Saturation Voltage (VBE(sat)) 1.5 V
Current Gain (hFE) 30 - 150
Package Type DPAK-3
RoHS Compliance Pb-Free and RoHS Compliant

Key Features

  • Lead-formed for surface mount applications in plastic sleeves or straight lead versions in plastic sleeves.
  • Available in tape and reel packaging for high-volume production.
  • Electrically similar to TIP47 and TIP50 transistors.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and RoHS compliant.

Applications

  • Line-operated audio output amplifiers.
  • Switch-mode power supply drivers.
  • Other switching applications.
  • Automotive and industrial applications requiring high reliability and compliance with automotive standards.

Q & A

  1. What is the MJD50T4 transistor used for?

    The MJD50T4 is used in line-operated audio output amplifiers, switch-mode power supply drivers, and other switching applications.

  2. What is the collector-emitter voltage (VCEO) of the MJD50T4?

    The collector-emitter voltage (VCEO) is 400 V (Min).

  3. What is the collector current (IC) rating of the MJD50T4?

    The collector current (IC) is rated at 1 A.

  4. Is the MJD50T4 RoHS compliant?

    Yes, the MJD50T4 is Pb-Free and RoHS compliant.

  5. What package types are available for the MJD50T4?

    The MJD50T4 is available in DPAK-3 packages with lead-formed or straight lead versions.

  6. Is the MJD50T4 suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

  7. What are the similar transistors to the MJD50T4?

    The MJD50T4 is electrically similar to TIP47 and TIP50 transistors.

  8. What is the current gain (hFE) range of the MJD50T4?

    The current gain (hFE) ranges from 30 to 150.

  9. Is the MJD50T4 available in tape and reel packaging?

    Yes, it is available in tape and reel packaging for high-volume production.

  10. What is the base-emitter saturation voltage (VBE(sat)) of the MJD50T4?

    The base-emitter saturation voltage (VBE(sat)) is 1.5 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 10V
Power - Max:15 W
Frequency - Transition:10MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD50T4 MJD50T4G MJD50TF MJD350T4
Manufacturer STMicroelectronics onsemi onsemi STMicroelectronics
Product Status Obsolete Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 500 mA
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V 300 V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A 1V @ 200mA, 1A 1V @ 200mA, 1A -
Current - Collector Cutoff (Max) 100µA 200µA 200µA 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V 30 @ 300mA, 10V 30 @ 300mA, 10V 30 @ 50mA, 10V
Power - Max 15 W 1.56 W 1.56 W 15 W
Frequency - Transition 10MHz 10MHz 10MHz -
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK D-Pak DPAK

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