Overview
The BCX5410TA is a medium power NPN silicon planar transistor produced by Diodes Incorporated. It is part of the BCX54, BCX55, and BCX56 series, known for their high reliability and versatility in various electronic applications. This transistor is packaged in the SOT89 format, making it suitable for a wide range of medium power switching and amplification tasks. The BCX5410TA is characterized by its continuous collector current of 1A, peak pulse collector current of 2A, and low saturation voltage, making it an efficient choice for many electronic circuits.
Key Specifications
Characteristic | Symbol | Value | Unit | Test Condition |
---|---|---|---|---|
Collector-Base Breakdown Voltage | BVCBO | 45 | V | IC = 100µA |
Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 10mA |
Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100µA |
Continuous Collector Current | IC | 1 | A | |
Peak Pulse Collector Current | ICM | 2 | A | |
Continuous Base Current | IB | 100 | mA | |
Peak Pulse Base Current | IBM | 200 | mA | |
Power Dissipation | PD | 0.55 | W | |
Thermal Resistance, Junction to Ambient | RθJA | 124 | °C/W | |
Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Key Features
- High Collector-Emitter Breakdown Voltage: BVCEO > 45V, 60V, and 80V for different models.
- Continuous Collector Current: IC = 1A and peak pulse collector current ICM = 2A.
- Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A.
- Gain Groups: Available in gain groups 10 and 16.
- Epitaxial Planar Die Construction: Ensures high performance and reliability.
- Complementary PNP Types: BCX51, 52, and 53 are available as complementary PNP transistors.
- Lead-Free and RoHS Compliant: Totally lead-free, halogen-free, and antimony-free, making it a “green” device.
- AEC-Q101 Qualified: Suitable for high-reliability automotive applications.
Applications
- Medium Power Switching: Ideal for medium power switching applications due to its high collector current and low saturation voltage.
- Amplification Applications: Suitable for AF driver and output stages in amplification circuits.
- Automotive Applications: Qualified to AEC-Q101 standards, making it suitable for automotive applications requiring high reliability.
Q & A
- What is the package type of the BCX5410TA transistor?
The BCX5410TA transistor is packaged in the SOT89 format.
- What is the continuous collector current of the BCX5410TA transistor?
The continuous collector current is 1A.
- What is the peak pulse collector current of the BCX5410TA transistor?
The peak pulse collector current is 2A.
- What is the collector-emitter breakdown voltage of the BCX5410TA transistor?
The collector-emitter breakdown voltage (BVCEO) is 45V.
- Is the BCX5410TA transistor RoHS compliant?
- What are the operating and storage temperature ranges for the BCX5410TA transistor?
The operating and storage temperature range is -55°C to +150°C.
- What are the complementary PNP types for the BCX54 series?
The complementary PNP types are BCX51, BCX52, and BCX53.
- Is the BCX5410TA suitable for automotive applications?
- What is the thermal resistance, junction to ambient, for the BCX5410TA transistor?
The thermal resistance, junction to ambient (RθJA), is 124°C/W.
- What is the power dissipation of the BCX5410TA transistor?
The power dissipation (PD) is 0.55W.