BCX5110TA
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Diodes Incorporated BCX5110TA

Manufacturer No:
BCX5110TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5110TA is a PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This component is known for its ruggedness, reliability, and improved thermal management, which enhances its lifespan. It is packaged in the SOT-89-3 format, making it suitable for surface mount technology (SMT) applications. The BCX5110TA is designed for medium power switching and amplification, making it an excellent choice for a variety of electronic projects, including AF driver and output stages.

Key Specifications

Product CategoryBipolar Transistors - BJT
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO45 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current1 A
Power Dissipation Pd1 W
Gain Bandwidth Product fT150 MHz
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
DC Current Gain hFE Max63 at 150 mA, 2 V
Package/CaseSOT-89-3
Mounting StyleSMD/SMT
Height1.5 mm
Length4.5 mm
Width2.5 mm
Unit Weight0.001834 oz

Key Features

  • Rugged and Reliable: The BCX5110TA is designed to offer improved thermal management and increased lifespan, making it a reliable choice for various applications.
  • High Performance: With a collector-emitter voltage of 45V, a maximum collector current of 1A, and a power dissipation of 1W, this transistor is suitable for medium power switching and amplification.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage, which is beneficial for reducing power losses in switching applications.
  • Complementary Types: The BCX5110TA has complementary NPN types such as BCX54, BCX55, and BCX56, making it versatile for different circuit designs.
  • RoHS Compliant and AEC-Q101 Qualified: The transistor is lead-free, RoHS compliant, and qualified to AEC-Q101 standards for high reliability applications.

Applications

The BCX5110TA is suitable for a wide range of applications, including:

  • AF Driver and Output Stages: It is particularly useful in audio frequency driver and output stages due to its high collector current and low saturation voltage.
  • Medium Power Switching and Amplification: The transistor is designed for medium power switching and amplification, making it a good choice for various electronic projects.
  • Automotive and Industrial Applications: Given its AEC-Q101 qualification, it is also suitable for high reliability applications in the automotive and industrial sectors.

Q & A

  1. What is the transistor polarity of the BCX5110TA?
    The BCX5110TA is a PNP bipolar junction transistor.
  2. What is the maximum collector-emitter voltage of the BCX5110TA?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  3. What is the maximum collector current of the BCX5110TA?
    The maximum DC collector current is 1 A.
  4. What is the power dissipation of the BCX5110TA?
    The power dissipation (Pd) is 1 W.
  5. What is the gain bandwidth product (fT) of the BCX5110TA?
    The gain bandwidth product (fT) is 150 MHz.
  6. What is the operating temperature range of the BCX5110TA?
    The operating temperature range is from -55°C to +150°C.
  7. Is the BCX5110TA RoHS compliant?
    Yes, the BCX5110TA is lead-free and RoHS compliant.
  8. What are the complementary NPN types for the BCX5110TA?
    The complementary NPN types are BCX54, BCX55, and BCX56.
  9. What is the package type of the BCX5110TA?
    The BCX5110TA is packaged in the SOT-89-3 format.
  10. Is the BCX5110TA qualified for automotive applications?
    Yes, it is qualified to AEC-Q101 standards for high reliability applications.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
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Similar Products

Part Number BCX5110TA BCX5310TA BCX5410TA BCX5210TA BCX5510TA BCX5116TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type PNP PNP NPN PNP NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 45 V 60 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 1 W 1 W 1 W 1 W 1 W 1 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

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