BCX51TA
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Diodes Incorporated BCX51TA

Manufacturer No:
BCX51TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX51TA is a PNP medium power bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is designed for medium power switching and amplification applications, making it suitable for a variety of electronic circuits. It is packaged in the SOT89 case, which is a surface mount device (SMD) package, and is fully RoHS compliant, halogen- and antimony-free, and lead-free.

Key Specifications

Characteristic Value Unit
Type of Transistor PNP -
Polarisation Bipolar -
Collector-Base Voltage (VCBO) -45 V
Collector-Emitter Voltage (VCEO) -45 V
Emitter-Base Voltage (VEBO) -5 V
Continuous Collector Current (IC) -1 A
Peak Pulse Collector Current (ICM) -2 A
Continuous Base Current (IB) -100 mA
Peak Pulse Base Current (IBM) -200 mA
Power Dissipation (PD) 1 W
Case SOT89 -
Mounting SMD -
Frequency 150 MHz
Current Gain (hFE) 25-250 -
Saturation Voltage (VCE(sat)) < -0.5 V @ IC = -0.5A, IB = -50mA

Key Features

  • High Collector-Emitter Voltage: Up to -45V, making it suitable for various power applications.
  • Medium Power Handling: Continuous collector current of -1A and peak pulse current of -2A.
  • Low Saturation Voltage: VCE(sat) < -0.5V @ -0.5A, IB = -50mA, which reduces power losses.
  • Complementary NPN Types: Available as BCX54, 55, and 56 for matching NPN transistors.
  • Environmental Compliance: Totally lead-free, halogen- and antimony-free, and fully RoHS compliant.
  • Automotive Grade: Qualified to AEC-Q100/101/200 and manufactured in IATF 16949 certified facilities.

Applications

  • Medium Power Switching: Suitable for applications requiring medium power switching, such as in automotive and industrial control systems.
  • Amplification Stages: Used in AF driver and output stages due to its low saturation voltage and high current gain.
  • General Electronics: Can be used in a variety of general electronic circuits where medium power handling is required.

Q & A

  1. What is the collector-emitter voltage of the BCX51TA transistor?

    The collector-emitter voltage (VCEO) of the BCX51TA transistor is -45V.

  2. What is the continuous collector current of the BCX51TA transistor?

    The continuous collector current (IC) of the BCX51TA transistor is -1A).

  3. What is the power dissipation of the BCX51TA transistor?

    The power dissipation (PD) of the BCX51TA transistor is 1W).

  4. What is the case type of the BCX51TA transistor?

    The BCX51TA transistor is packaged in an SOT89 case).

  5. Is the BCX51TA transistor RoHS compliant?

    Yes, the BCX51TA transistor is fully RoHS compliant, halogen- and antimony-free, and lead-free).

  6. What are the complementary NPN types for the BCX51TA transistor?

    The complementary NPN types for the BCX51TA transistor are BCX54, 55, and 56).

  7. What is the typical application of the BCX51TA transistor?

    The BCX51TA transistor is typically used in medium power switching and amplification applications, such as in AF driver and output stages).

  8. Is the BCX51TA transistor suitable for automotive applications?

    Yes, the BCX51TA transistor is qualified to AEC-Q100/101/200 and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications).

  9. What is the current gain range of the BCX51TA transistor?

    The current gain (hFE) of the BCX51TA transistor ranges from 25 to 250).

  10. What is the saturation voltage of the BCX51TA transistor?

    The saturation voltage (VCE(sat)) of the BCX51TA transistor is less than -0.5V @ IC = -0.5A, IB = -50mA).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
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Similar Products

Part Number BCX51TA BCX55TA BCX52TA BCX54TA BCX53TA BCX51TF BCX41TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Nexperia USA Inc. Diodes Incorporated
Product Status Active Active Active Active Active Active Active
Transistor Type PNP NPN PNP NPN PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 60 V 45 V 80 V 45 V 125 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 63 @ 150mA, 2V 25 @ 100µA, 1V
Power - Max 1 W 1 W 1 W 1 W 1 W 500 mW 330 mW
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz - 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89 SOT-23-3

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