BCX53TA
  • Share:

Diodes Incorporated BCX53TA

Manufacturer No:
BCX53TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX53TA is a PNP silicon planar medium power transistor manufactured by Diodes Incorporated. It is packaged in the SOT89 case, which is a surface-mount type. This transistor is designed for medium power switching or amplification applications and is known for its high performance and reliability. The BCX53TA is part of a family of transistors that include complementary NPN types such as the BCX54, 55, and 56. It is lead-free, RoHS compliant, and halogen and antimony free, aligning with Diodes Incorporated’s “Green” policy.

Key Specifications

Characteristic Value Unit
Manufacturer Part Number BCX53TA
Manufacturer Diodes Incorporated
Transistor Type PNP
Package / Case SOT-89
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Continuous Collector Current (IC) -1A
Peak Pulse Collector Current (ICM) -2A
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Frequency - Transition 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Power - Max 1W

Key Features

  • Continuous Collector Current of -1A and Peak Pulse Collector Current of -2A.
  • Low Saturation Voltage Vce(sat) < -500mV @ -0.5A, ensuring efficient operation.
  • Gain groups 10 and 16, providing flexibility in design.
  • Complementary NPN types: BCX54, 55, and 56, allowing for balanced circuit designs.
  • Lead-free, RoHS compliant, and halogen and antimony free, adhering to Diodes Incorporated’s “Green” policy.
  • Qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications.
  • Epitaxial planar die construction for improved performance and reliability.

Applications

  • Medium power switching or amplification applications.
  • Audio amplifiers, where the transistor's low saturation voltage and high current gain are beneficial.
  • Power supplies, where the transistor's ability to handle high currents and voltages is essential.
  • Radio-frequency amplifiers, leveraging the transistor's high frequency transition characteristics).
  • AF driver and output stages, where the transistor's performance in amplifying signals is crucial).

Q & A

  1. What is the BCX53TA transistor used for?

    The BCX53TA is used for medium power switching or amplification applications, including audio amplifiers, power supplies, and radio-frequency amplifiers).

  2. What is the package type of the BCX53TA transistor?

    The BCX53TA transistor is packaged in the SOT89 case, which is a surface-mount type).

  3. What are the key electrical specifications of the BCX53TA transistor?

    The key specifications include a continuous collector current of -1A, peak pulse collector current of -2A, and a collector-emitter breakdown voltage of 80V).

  4. Is the BCX53TA transistor RoHS compliant?
  5. What are the operating temperature ranges for the BCX53TA transistor?

    The operating temperature range for the BCX53TA transistor is -65°C to 150°C (TJ)).

  6. What is the maximum power dissipation of the BCX53TA transistor?

    The maximum power dissipation of the BCX53TA transistor is 1W).

  7. Does the BCX53TA transistor have any automotive qualifications?
  8. What is the frequency transition characteristic of the BCX53TA transistor?

    The frequency transition characteristic of the BCX53TA transistor is 150MHz).

  9. What is the DC current gain (hFE) of the BCX53TA transistor?

    The DC current gain (hFE) of the BCX53TA transistor is 40 @ 150mA, 2V).

  10. Are there any complementary NPN types available for the BCX53TA transistor?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89-3
0 Remaining View Similar

In Stock

$0.43
1,108

Please send RFQ , we will respond immediately.

Same Series
BCX5310TA
BCX5310TA
TRANS PNP 80V 1A SOT89-3
BCX51TA
BCX51TA
TRANS PNP 45V 1A SOT89-3
BCX5210TA
BCX5210TA
TRANS PNP 60V 1A SOT89-3
BCX5110TA
BCX5110TA
TRANS PNP 45V 1A SOT89-3
BCX52TA
BCX52TA
TRANS PNP 60V 1A SOT89-3
BCX5316TA
BCX5316TA
TRANS PNP 80V 1A SOT89-3
BCX5116TA
BCX5116TA
TRANS PNP 45V 1A SOT89-3
BCX53TA
BCX53TA
TRANS PNP 80V 1A SOT89-3

Similar Products

Part Number BCX53TA BCX53TF BCX55TA BCX53TX BCX56TA BCX54TA BCX51TA BCX52TA
Manufacturer Diodes Incorporated Nexperia USA Inc. Diodes Incorporated Nexperia USA Inc. Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active
Transistor Type PNP PNP NPN PNP NPN NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 60 V 80 V 80 V 45 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 63 @ 150mA, 2V 40 @ 150mA, 2V 63 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1 W 500 mW 1 W 500 mW 1 W 1 W 1 W 1 W
Frequency - Transition 150MHz 140MHz 150MHz 140MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89 SOT-89-3 SOT-89 SOT-89-3 SOT-89-3 SOT-89-3 SOT-89-3

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB

Related Product By Brand

BAT54CTA
BAT54CTA
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAT54A-7-F
BAT54A-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV21WS-7-G
BAV21WS-7-G
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD323
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN
BZX84C12Q-13-F
BZX84C12Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C27Q-13-F
BZX84C27Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C8V2T-7-F
BZX84C8V2T-7-F
Diodes Incorporated
DIODE ZENER 8.2V 150MW SOT523
BZX84C36-7
BZX84C36-7
Diodes Incorporated
DIODE ZENER 36V 300MW SOT23-3
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP