BCP5616TTA
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Diodes Incorporated BCP5616TTA

Manufacturer No:
BCP5616TTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TTA is a low-power NPN transistor manufactured by Diodes Incorporated. It is housed in a SOT-223 package, making it suitable for surface mounting in various electronic circuits. This transistor is designed to meet medium voltage requirements and is compliant with the 2002/95/EC European Directive, ensuring it is lead-free and environmentally friendly. The BCP5616TTA is a versatile component that can be used in a range of applications, including medium voltage load switching and output stages for audio amplifiers.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)1A
Collector Peak Current (ICM)1.5A (tP < 5ms)
Base Current (IB)0.1A
Base Peak Current (IBM)0.2A (tP < 5ms)
Total Dissipation at Tamb = 25°C (Ptot)1.6W
Storage Temperature (Tstg)-65 to 150°C
Max. Operating Junction Temperature (TJ)150°C
Thermal Resistance Junction-Ambient (Rthj-amb)78°C/W

Key Features

  • Silicon epitaxial planar NPN medium voltage transistor
  • SOT-223 plastic package for surface mounting
  • Available in tape & reel packing
  • Compliant with the 2002/95/EC European Directive (lead-free)
  • Low power consumption
  • High collector-emitter breakdown voltage (VCEO = 80V)
  • High collector current (IC = 1A)

Applications

  • Medium voltage load switch transistor
  • Output stage for audio amplifiers circuits
  • Automotive post-voltage regulation
  • General-purpose switching and amplification in electronic circuits

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP5616TTA transistor?
    The collector-emitter voltage (VCEO) of the BCP5616TTA transistor is 80V.
  2. What is the maximum collector current (IC) of the BCP5616TTA transistor?
    The maximum collector current (IC) of the BCP5616TTA transistor is 1A.
  3. What is the package type of the BCP5616TTA transistor?
    The BCP5616TTA transistor is housed in a SOT-223 package.
  4. Is the BCP5616TTA transistor lead-free?
    Yes, the BCP5616TTA transistor is lead-free and compliant with the 2002/95/EC European Directive.
  5. What are the typical applications of the BCP5616TTA transistor?
    The BCP5616TTA transistor is typically used in medium voltage load switching, output stages for audio amplifiers, and automotive post-voltage regulation.
  6. What is the maximum operating junction temperature (TJ) of the BCP5616TTA transistor?
    The maximum operating junction temperature (TJ) of the BCP5616TTA transistor is 150°C.
  7. What is the thermal resistance junction-ambient (Rthj-amb) of the BCP5616TTA transistor?
    The thermal resistance junction-ambient (Rthj-amb) of the BCP5616TTA transistor is 78°C/W.
  8. Is the BCP5616TTA transistor available in tape & reel packing?
    Yes, the BCP5616TTA transistor is available in tape & reel packing.
  9. What is the base-emitter on voltage (VBE(on)) of the BCP5616TTA transistor?
    The base-emitter on voltage (VBE(on)) of the BCP5616TTA transistor is approximately 1V.
  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTA transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTA transistor is approximately 0.5V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5616TTA BCP5616TTC BCP5616QTA BCP5616TA BCP5616TQTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2 W 2 W 2.5 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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IC COMPARATOR DUAL DIFF TSSOP-8