BCP5616TTA
  • Share:

Diodes Incorporated BCP5616TTA

Manufacturer No:
BCP5616TTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TTA is a low-power NPN transistor manufactured by Diodes Incorporated. It is housed in a SOT-223 package, making it suitable for surface mounting in various electronic circuits. This transistor is designed to meet medium voltage requirements and is compliant with the 2002/95/EC European Directive, ensuring it is lead-free and environmentally friendly. The BCP5616TTA is a versatile component that can be used in a range of applications, including medium voltage load switching and output stages for audio amplifiers.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)1A
Collector Peak Current (ICM)1.5A (tP < 5ms)
Base Current (IB)0.1A
Base Peak Current (IBM)0.2A (tP < 5ms)
Total Dissipation at Tamb = 25°C (Ptot)1.6W
Storage Temperature (Tstg)-65 to 150°C
Max. Operating Junction Temperature (TJ)150°C
Thermal Resistance Junction-Ambient (Rthj-amb)78°C/W

Key Features

  • Silicon epitaxial planar NPN medium voltage transistor
  • SOT-223 plastic package for surface mounting
  • Available in tape & reel packing
  • Compliant with the 2002/95/EC European Directive (lead-free)
  • Low power consumption
  • High collector-emitter breakdown voltage (VCEO = 80V)
  • High collector current (IC = 1A)

Applications

  • Medium voltage load switch transistor
  • Output stage for audio amplifiers circuits
  • Automotive post-voltage regulation
  • General-purpose switching and amplification in electronic circuits

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP5616TTA transistor?
    The collector-emitter voltage (VCEO) of the BCP5616TTA transistor is 80V.
  2. What is the maximum collector current (IC) of the BCP5616TTA transistor?
    The maximum collector current (IC) of the BCP5616TTA transistor is 1A.
  3. What is the package type of the BCP5616TTA transistor?
    The BCP5616TTA transistor is housed in a SOT-223 package.
  4. Is the BCP5616TTA transistor lead-free?
    Yes, the BCP5616TTA transistor is lead-free and compliant with the 2002/95/EC European Directive.
  5. What are the typical applications of the BCP5616TTA transistor?
    The BCP5616TTA transistor is typically used in medium voltage load switching, output stages for audio amplifiers, and automotive post-voltage regulation.
  6. What is the maximum operating junction temperature (TJ) of the BCP5616TTA transistor?
    The maximum operating junction temperature (TJ) of the BCP5616TTA transistor is 150°C.
  7. What is the thermal resistance junction-ambient (Rthj-amb) of the BCP5616TTA transistor?
    The thermal resistance junction-ambient (Rthj-amb) of the BCP5616TTA transistor is 78°C/W.
  8. Is the BCP5616TTA transistor available in tape & reel packing?
    Yes, the BCP5616TTA transistor is available in tape & reel packing.
  9. What is the base-emitter on voltage (VBE(on)) of the BCP5616TTA transistor?
    The base-emitter on voltage (VBE(on)) of the BCP5616TTA transistor is approximately 1V.
  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTA transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTA transistor is approximately 0.5V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.09
1,851

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCP5616TTA BCP5616TTC BCP5616QTA BCP5616TA BCP5616TQTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2 W 2 W 2.5 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89

Related Product By Brand

BAV170Q-13-F
BAV170Q-13-F
Diodes Incorporated
SWITCHING DIODE BVR <= 100V SOT2
BAS16HLPQ-7B
BAS16HLPQ-7B
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
BAS16-7-G
BAS16-7-G
Diodes Incorporated
DIODE GEN PURP SOT23-3
BZX84C27-7-F-79
BZX84C27-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C30-7-F-31
BZX84C30-7-F-31
Diodes Incorporated
DIODE ZENER 30V 300MW SOT23
BC847AT-7-F
BC847AT-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT523
BCX5210TA
BCX5210TA
Diodes Incorporated
TRANS PNP 60V 1A SOT89-3
MMBT2222AQ-7-F
MMBT2222AQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
MMBT2222A-7
MMBT2222A-7
Diodes Incorporated
TRANS NPN 40V 0.6A SOT23-3
MMBT3904T-7-F-79
MMBT3904T-7-F-79
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
MMBF170-7-F
MMBF170-7-F
Diodes Incorporated
MOSFET N-CH 60V 500MA SOT23-3
74LVC1G125QW5-7
74LVC1G125QW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25