BCP5616TTA
  • Share:

Diodes Incorporated BCP5616TTA

Manufacturer No:
BCP5616TTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TTA is a low-power NPN transistor manufactured by Diodes Incorporated. It is housed in a SOT-223 package, making it suitable for surface mounting in various electronic circuits. This transistor is designed to meet medium voltage requirements and is compliant with the 2002/95/EC European Directive, ensuring it is lead-free and environmentally friendly. The BCP5616TTA is a versatile component that can be used in a range of applications, including medium voltage load switching and output stages for audio amplifiers.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)1A
Collector Peak Current (ICM)1.5A (tP < 5ms)
Base Current (IB)0.1A
Base Peak Current (IBM)0.2A (tP < 5ms)
Total Dissipation at Tamb = 25°C (Ptot)1.6W
Storage Temperature (Tstg)-65 to 150°C
Max. Operating Junction Temperature (TJ)150°C
Thermal Resistance Junction-Ambient (Rthj-amb)78°C/W

Key Features

  • Silicon epitaxial planar NPN medium voltage transistor
  • SOT-223 plastic package for surface mounting
  • Available in tape & reel packing
  • Compliant with the 2002/95/EC European Directive (lead-free)
  • Low power consumption
  • High collector-emitter breakdown voltage (VCEO = 80V)
  • High collector current (IC = 1A)

Applications

  • Medium voltage load switch transistor
  • Output stage for audio amplifiers circuits
  • Automotive post-voltage regulation
  • General-purpose switching and amplification in electronic circuits

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP5616TTA transistor?
    The collector-emitter voltage (VCEO) of the BCP5616TTA transistor is 80V.
  2. What is the maximum collector current (IC) of the BCP5616TTA transistor?
    The maximum collector current (IC) of the BCP5616TTA transistor is 1A.
  3. What is the package type of the BCP5616TTA transistor?
    The BCP5616TTA transistor is housed in a SOT-223 package.
  4. Is the BCP5616TTA transistor lead-free?
    Yes, the BCP5616TTA transistor is lead-free and compliant with the 2002/95/EC European Directive.
  5. What are the typical applications of the BCP5616TTA transistor?
    The BCP5616TTA transistor is typically used in medium voltage load switching, output stages for audio amplifiers, and automotive post-voltage regulation.
  6. What is the maximum operating junction temperature (TJ) of the BCP5616TTA transistor?
    The maximum operating junction temperature (TJ) of the BCP5616TTA transistor is 150°C.
  7. What is the thermal resistance junction-ambient (Rthj-amb) of the BCP5616TTA transistor?
    The thermal resistance junction-ambient (Rthj-amb) of the BCP5616TTA transistor is 78°C/W.
  8. Is the BCP5616TTA transistor available in tape & reel packing?
    Yes, the BCP5616TTA transistor is available in tape & reel packing.
  9. What is the base-emitter on voltage (VBE(on)) of the BCP5616TTA transistor?
    The base-emitter on voltage (VBE(on)) of the BCP5616TTA transistor is approximately 1V.
  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTA transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTA transistor is approximately 0.5V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.09
1,851

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCP5616TTA BCP5616TTC BCP5616QTA BCP5616TA BCP5616TQTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2 W 2 W 2.5 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
SMMBTA56LT1G
SMMBTA56LT1G
onsemi
TRANS PNP 80V 0.5A SOT23-3
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS70-04T-7-F
BAS70-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
1N4148WS-7-F
1N4148WS-7-F
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOD323
BAS20W-7-F
BAS20W-7-F
Diodes Incorporated
DIODE GEN PURP 150V 200MA SOT323
BZX84C27Q-13-F
BZX84C27Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84B3V6Q-7-F
BZX84B3V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84B3V0Q-7-F
BZX84B3V0Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BC807-16W-7
BC807-16W-7
Diodes Incorporated
TRANS PNP 45V 0.5A SOT323
BCX5416TA
BCX5416TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
74LVC1G07FW5-7
74LVC1G07FW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN