BCP5616TTC
  • Share:

Diodes Incorporated BCP5616TTC

Manufacturer No:
BCP5616TTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TTC is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is housed in a SOT223 package, making it suitable for surface mount applications. It is designed for medium power switching and amplification tasks, offering high reliability and performance.

The BCP5616TTC is part of Diodes Incorporated's lineup of automotive-compliant and general-purpose transistors, ensuring it meets stringent quality and environmental standards, including being totally lead-free, RoHS compliant, and halogen- and antimony-free.

Key Specifications

Parameter Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (BVCEO) 80 V IC = 10mA
Collector-Emitter Breakdown Voltage (BVCEO) 80 V IC = 10mA
Emitter-Base Breakdown Voltage (BVEBO) 7 V IE = 10µA
Continuous Collector Current (IC) 1 A
Peak Pulse Current (ICM) 2 A tP < 5ms
Power Dissipation (Ptot) 2 W Tamb = 25°C
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage (VBE(on)) 1.0 V IC = 500mA, VCE = 2V
Transition Frequency (fT) 100 150 MHz IC = 50mA, VCE = 10V, f = 100MHz

Key Features

  • High continuous collector current of 1A and peak pulse current of 2A.
  • Low saturation voltage VCE(sat) of less than 500mV at 0.5A.
  • High collector-base and collector-emitter breakdown voltages (BVCEO > 80V).
  • Totally lead-free, RoHS compliant, and halogen- and antimony-free, making it an environmentally friendly option.
  • Available in SOT223 package for surface mounting.
  • Automotive-compliant versions available (e.g., BCP5616TQ).

Applications

  • Medium power switching and amplification applications.
  • Output stage for audio amplifier circuits.
  • Automotive post-voltage regulation and other automotive applications requiring specific change control and compliance with AEC-Q100/101/200 standards.
  • General-purpose transistor applications where high reliability and performance are required.

Q & A

  1. What is the maximum continuous collector current of the BCP5616TTC?

    The maximum continuous collector current is 1A.

  2. What is the peak pulse current rating of the BCP5616TTC?

    The peak pulse current rating is 2A for a pulse duration less than 5ms).

  3. What is the collector-emitter breakdown voltage (BVCEO) of the BCP5616TTC?

    The collector-emitter breakdown voltage (BVCEO) is greater than 80V).

  4. Is the BCP5616TTC RoHS compliant?

    Yes, the BCP5616TTC is totally lead-free and RoHS compliant).

  5. What is the typical collector-emitter saturation voltage (VCE(sat)) of the BCP5616TTC?

    The typical collector-emitter saturation voltage (VCE(sat)) is less than 0.5V at 0.5A).

  6. What is the transition frequency (fT) of the BCP5616TTC?

    The transition frequency (fT) is typically 150MHz at IC = 50mA, VCE = 10V, and f = 100MHz).

  7. Is the BCP5616TTC suitable for automotive applications?

    Yes, the BCP5616TTC has automotive-compliant versions available, such as the BCP5616TQ, which meets AEC-Q100/101/200 standards).

  8. What package type is the BCP5616TTC available in?

    The BCP5616TTC is available in the SOT223 package for surface mounting).

  9. What are some common applications of the BCP5616TTC?

    Common applications include medium power switching, amplification, output stages for audio amplifiers, and automotive post-voltage regulation).

  10. Is the BCP5616TTC environmentally friendly?

    Yes, the BCP5616TTC is halogen- and antimony-free, making it an environmentally friendly option).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.08
2,371

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BCP5616TTC BCP5616QTC BCP5616TC BCP5616TQTC BCP5616TTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2 W 2 W 2.5 W 2.5 W
Frequency - Transition 150MHz 150MHz 125MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BFS20
BFS20
Diotec Semiconductor
TRANS NPN 20V 0.025A SOT23-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAT760Q-7
BAT760Q-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BAS20Q-13-F
BAS20Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C22TS-7-F
BZX84C22TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 22V SOT363
BZT52HC39WF-7
BZT52HC39WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C30T-7-F
BZX84C30T-7-F
Diodes Incorporated
DIODE ZENER 30V 150MW SOT523
BZX84C18-7-F-31
BZX84C18-7-F-31
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BC857A-7-F
BC857A-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT23-3
2N7002A-7
2N7002A-7
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26