BCP5616TQTC
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Diodes Incorporated BCP5616TQTC

Manufacturer No:
BCP5616TQTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TQTC is a medium power NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated. This transistor is specifically tailored to meet the stringent requirements of automotive applications, ensuring high reliability and performance. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for demanding automotive environments.

Key Specifications

ParameterValueUnitTest Condition
Collector-Base Breakdown Voltage (BVCBO)100VIC = 100µA
Collector-Emitter Breakdown Voltage (BVCEO)80VIC = 10mA
Emitter-Base Breakdown Voltage (BVEBO)7VIE = 10µA
Collector Current (IC)1A
Peak Pulse Collector Current (ICM)2AtP < 5ms
Total Power Dissipation (Ptot)2WTamb = 25°C
Collector-Emitter Saturation Voltage (VCE(SAT))< 500mVIC = 0.5A, IB = 50mA
Static Forward Current Transfer Ratio (hFE)40 - 250IC = 5mA, VCE = 2V
Base-Emitter Turn-On Voltage (VBE(on))< 1.0VIC = 500mA, VCE = 2V
Transition Frequency (fT)100 - 150MHzIC = 50mA, VCE = 10V, f = 100MHz
PackageSOT223
Case MaterialMolded Plastic, “Green” Molding Compound
UL Flammability Rating94V-0
Moisture SensitivityLevel 1 per J-STD-020
Terminals FinishMatte Tin Plated LeadsSolderable per MIL-STD-202, Method 208
Weight0.112 grams (Approximate)

Key Features

  • High Continuous Collector Current: 1A
  • Peak Pulse Current: 2A
  • Low Saturation Voltage: VCE(SAT) < 500mV @ 0.5A
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free, “Green” Device
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities
  • UL Flammability Rating 94V-0 and Moisture Sensitivity Level 1 per J-STD-020

Applications

  • Medium Power Switching or Amplification Applications
  • AF Driver and Output Stages
  • Automotive applications requiring specific change control and high reliability

Q & A

  1. What is the collector-emitter breakdown voltage of the BCP5616TQTC?
    The collector-emitter breakdown voltage (BVCEO) is 80V.
  2. What is the maximum continuous collector current of the BCP5616TQTC?
    The maximum continuous collector current (IC) is 1A.
  3. What is the peak pulse collector current of the BCP5616TQTC?
    The peak pulse collector current (ICM) is 2A.
  4. What is the total power dissipation of the BCP5616TQTC?
    The total power dissipation (Ptot) is 2W at Tamb = 25°C.
  5. Is the BCP5616TQTC RoHS compliant?
    Yes, the BCP5616TQTC is totally lead-free and fully RoHS compliant.
  6. What is the package type of the BCP5616TQTC?
    The package type is SOT223.
  7. What are the environmental certifications of the BCP5616TQTC?
    The BCP5616TQTC is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
  8. What are the typical applications of the BCP5616TQTC?
    The typical applications include medium power switching or amplification, AF driver and output stages, and automotive applications.
  9. What is the UL flammability rating of the BCP5616TQTC?
    The UL flammability rating is 94V-0.
  10. What is the moisture sensitivity level of the BCP5616TQTC?
    The moisture sensitivity level is Level 1 per J-STD-020.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5616TQTC BCP5616TTC BCP5616QTC BCP5616TQTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2 W 2.5 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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