BCP5616TQTC
  • Share:

Diodes Incorporated BCP5616TQTC

Manufacturer No:
BCP5616TQTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5616TQTC is a medium power NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated. This transistor is specifically tailored to meet the stringent requirements of automotive applications, ensuring high reliability and performance. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities, making it suitable for demanding automotive environments.

Key Specifications

ParameterValueUnitTest Condition
Collector-Base Breakdown Voltage (BVCBO)100VIC = 100µA
Collector-Emitter Breakdown Voltage (BVCEO)80VIC = 10mA
Emitter-Base Breakdown Voltage (BVEBO)7VIE = 10µA
Collector Current (IC)1A
Peak Pulse Collector Current (ICM)2AtP < 5ms
Total Power Dissipation (Ptot)2WTamb = 25°C
Collector-Emitter Saturation Voltage (VCE(SAT))< 500mVIC = 0.5A, IB = 50mA
Static Forward Current Transfer Ratio (hFE)40 - 250IC = 5mA, VCE = 2V
Base-Emitter Turn-On Voltage (VBE(on))< 1.0VIC = 500mA, VCE = 2V
Transition Frequency (fT)100 - 150MHzIC = 50mA, VCE = 10V, f = 100MHz
PackageSOT223
Case MaterialMolded Plastic, “Green” Molding Compound
UL Flammability Rating94V-0
Moisture SensitivityLevel 1 per J-STD-020
Terminals FinishMatte Tin Plated LeadsSolderable per MIL-STD-202, Method 208
Weight0.112 grams (Approximate)

Key Features

  • High Continuous Collector Current: 1A
  • Peak Pulse Current: 2A
  • Low Saturation Voltage: VCE(SAT) < 500mV @ 0.5A
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free, “Green” Device
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities
  • UL Flammability Rating 94V-0 and Moisture Sensitivity Level 1 per J-STD-020

Applications

  • Medium Power Switching or Amplification Applications
  • AF Driver and Output Stages
  • Automotive applications requiring specific change control and high reliability

Q & A

  1. What is the collector-emitter breakdown voltage of the BCP5616TQTC?
    The collector-emitter breakdown voltage (BVCEO) is 80V.
  2. What is the maximum continuous collector current of the BCP5616TQTC?
    The maximum continuous collector current (IC) is 1A.
  3. What is the peak pulse collector current of the BCP5616TQTC?
    The peak pulse collector current (ICM) is 2A.
  4. What is the total power dissipation of the BCP5616TQTC?
    The total power dissipation (Ptot) is 2W at Tamb = 25°C.
  5. Is the BCP5616TQTC RoHS compliant?
    Yes, the BCP5616TQTC is totally lead-free and fully RoHS compliant.
  6. What is the package type of the BCP5616TQTC?
    The package type is SOT223.
  7. What are the environmental certifications of the BCP5616TQTC?
    The BCP5616TQTC is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
  8. What are the typical applications of the BCP5616TQTC?
    The typical applications include medium power switching or amplification, AF driver and output stages, and automotive applications.
  9. What is the UL flammability rating of the BCP5616TQTC?
    The UL flammability rating is 94V-0.
  10. What is the moisture sensitivity level of the BCP5616TQTC?
    The moisture sensitivity level is Level 1 per J-STD-020.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.5 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.11
246

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCP5616TQTC BCP5616TTC BCP5616QTC BCP5616TQTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.5 W 2.5 W 2 W 2.5 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

1N5711W-13
1N5711W-13
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
BAS70-05-7
BAS70-05-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAS16HLPQ-7B
BAS16HLPQ-7B
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
1N4148WT-7
1N4148WT-7
Diodes Incorporated
DIODE GEN PURP 80V 125MA SOD523
BAS21-7
BAS21-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT23
BZX84C15S-7-F
BZX84C15S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 15V SOT363
BZX84B18Q-7-F
BZX84B18Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER DIODE SOT2
BZX84C39-7-F-79
BZX84C39-7-F-79
Diodes Incorporated
DIODE ZENER
BC857C-7-F
BC857C-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT23-3
BCP53QTA
BCP53QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
MMBT3904T-7-F-79
MMBT3904T-7-F-79
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP