Overview
The BC848BW-7-F is a surface mount NPN general-purpose transistor manufactured by Diodes Incorporated. This transistor is part of the BC848 series, known for its versatility in various electronic applications. It is packaged in the SOT-323 format, making it suitable for compact and efficient circuit designs. The BC848BW-7-F is designed to handle a range of operating conditions and is ideal for both switching and amplifier applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Breakdown Voltage | VCBO | 30 | V |
| Collector-Emitter Breakdown Voltage | VCEO | 30 | V |
| Emitter-Base Breakdown Voltage | VEB0 | 5 | V |
| Continuous Collector Current | IC | 100 mA | A |
| Peak Collector Current | ICM | 200 mA | A |
| Peak Base Current | IBM | 200 mA | A |
| Junction Temperature | Tj | -65 to +150 °C | °C |
| Storage Temperature | Tstg | -65 to +150 °C | °C |
| Power Dissipation | PD | 200 mW | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 625 °C/W | °C/W |
| DC Current Gain (hFE) | hFE | 200 - 450 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.58 - 0.77 V | V |
| Transition Frequency | fT | 100 - 300 MHz | MHz |
Key Features
- Compact SOT-323 Package: Suitable for space-saving designs and high-density mounting.
- High DC Current Gain: hFE ranges from 200 to 450, ensuring reliable amplification.
- Low Collector-Emitter Saturation Voltage: VCE(sat) as low as 0.58 V, reducing power consumption.
- High Transition Frequency: Up to 300 MHz, making it suitable for high-frequency applications.
- Robust Thermal Characteristics: Thermal resistance of 625 °C/W (Junction to Ambient) and 115 °C/W (Junction to Case).
- ESD Protection: Human Body Model (HBM) ESD rating of 4,000 V and Charged Device Model (CDM) ESD rating of 1,000 V.
Applications
- Switching Applications: Suitable for high-speed switching due to its low saturation voltage and high transition frequency.
- Amplifier Applications: Ideal for audio frequency (AF) amplifiers and other general-purpose amplification needs.
- Automotive Electronics: Meets AEC-Q101 standards, making it reliable for use in automotive systems.
- Consumer Electronics: Used in various consumer electronic devices requiring compact and efficient transistor solutions.
Q & A
- What is the package type of the BC848BW-7-F transistor?
The BC848BW-7-F transistor is packaged in the SOT-323 format.
- What is the maximum collector current of the BC848BW-7-F transistor?
The maximum continuous collector current is 100 mA, and the peak collector current is 200 mA.
- What is the DC current gain (hFE) of the BC848BW-7-F transistor?
The DC current gain (hFE) ranges from 200 to 450.
- What is the collector-emitter breakdown voltage of the BC848BW-7-F transistor?
The collector-emitter breakdown voltage (VCEO) is 30 V.
- What is the junction temperature range of the BC848BW-7-F transistor?
The junction temperature range is -65 to +150 °C.
- What is the thermal resistance of the BC848BW-7-F transistor?
The thermal resistance from junction to ambient (RθJA) is 625 °C/W, and from junction to case (RθJC) is 115 °C/W.
- Does the BC848BW-7-F transistor have ESD protection?
Yes, it has an ESD rating of 4,000 V for the Human Body Model (HBM) and 1,000 V for the Charged Device Model (CDM).
- What are the typical applications of the BC848BW-7-F transistor?
It is suitable for switching and amplifier applications, including automotive electronics and consumer electronic devices.
- What is the transition frequency of the BC848BW-7-F transistor?
The transition frequency (fT) is up to 300 MHz.
- Is the BC848BW-7-F transistor AEC-Q101 qualified?
Yes, it meets the AEC-Q101 standards for automotive applications.
