1N4004GA0
  • Share:

Taiwan Semiconductor Corporation 1N4004GA0

Manufacturer No:
1N4004GA0
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
1A,400V,STD.GLASS PASSIVATED REC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GA0 is a standard glass passivated rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is part of the 1N4001G to 1N4007G series, known for its reliability and high performance in various electrical applications. It is designed to handle high current and voltage requirements, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value Units
Peak Repetitive Reverse Voltage (VRRM) 400 V
Working Peak Reverse Voltage (VRWM) 400 V
Average Forward Rectified Output Current (IO) @ TA = 75°C 1.0 A
Non-Repetitive Peak Forward Surge Current (IFSM) 30 A
Forward Voltage @ IF = 1.0A (VFM) 1.0 V
Peak Reverse Current @ TA = 25°C (IRM) 5.0 µA µA
Typical Junction Capacitance (CJ) 8 pF pF
Typical Thermal Resistance Junction to Ambient (RθJA) 100 °C/W °C/W
Operating Junction Temperature Range (TJ) -65 to +175 °C
Storage Temperature Range (TSTG) -65 to +175 °C
Package / Case DO-204AL, DO-41, Axial

Key Features

  • High Current Capability: The 1N4004GA0 can handle an average forward rectified output current of 1.0 A and a non-repetitive peak forward surge current of 30 A.
  • Low Forward Voltage Drop: It has a forward voltage drop of 1.0 V at 1.0 A, ensuring efficient operation.
  • High Reliability: The diode is glass passivated, providing high reliability and durability.
  • High Surge Current Capability: It can withstand high surge currents, making it suitable for applications with transient loads.
  • Wide Operating Temperature Range: The diode operates within a junction temperature range of -65°C to +175°C.

Applications

  • Power Supplies: Used in rectifier circuits for converting AC to DC.
  • Consumer Electronics: Suitable for use in various consumer electronic devices requiring rectification.
  • Industrial Electronics: Employed in industrial control systems, motor drives, and other high-current applications.
  • Automotive Systems: Can be used in automotive electronics where high reliability and durability are essential.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4004GA0 diode?

    The peak repetitive reverse voltage (VRRM) is 400 V.

  2. What is the average forward rectified output current of the 1N4004GA0?

    The average forward rectified output current (IO) at TA = 75°C is 1.0 A.

  3. What is the forward voltage drop of the 1N4004GA0 at 1.0 A?

    The forward voltage drop (VFM) at IF = 1.0 A is 1.0 V.

  4. What is the non-repetitive peak forward surge current of the 1N4004GA0?

    The non-repetitive peak forward surge current (IFSM) is 30 A.

  5. What is the typical junction capacitance of the 1N4004GA0?

    The typical junction capacitance (CJ) is 8 pF.

  6. What is the operating junction temperature range of the 1N4004GA0?

    The operating junction temperature range (TJ) is -65°C to +175°C.

  7. What type of package does the 1N4004GA0 come in?

    The 1N4004GA0 comes in DO-204AL, DO-41, and axial packages.

  8. Is the 1N4004GA0 suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its high reliability and durability.

  9. What is the storage temperature range for the 1N4004GA0?

    The storage temperature range (TSTG) is -65°C to +175°C.

  10. What are some common applications of the 1N4004GA0 diode?

    Common applications include power supplies, consumer electronics, industrial electronics, and automotive systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
243

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

MURF1620CTHC0G
MURF1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V ITO-220AB
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4002G A0G
1N4002G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR460SH
MUR460SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT42 A0
BAT42 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZX84C6V2 RFG
BZX84C6V2 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 300MW SOT23
BZV55C6V8 L1G
BZV55C6V8 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZX79C5V1 A0G
BZX79C5V1 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW DO35