MMBT2222A RFG
  • Share:

Taiwan Semiconductor Corporation MMBT2222A RFG

Manufacturer No:
MMBT2222A RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A RFG, produced by Taiwan Semiconductor Corporation, is the SMD (SOT-23) version of the popular 2N2222A transistor. This NPN bipolar transistor is designed for low power switching and amplification applications where space is a constraint. It is widely used in various electronic circuits due to its compact size and robust performance characteristics.

Key Specifications

Parameter Value Unit
Collector Current (IC) 600 mA
Peak Pulse Collector Current (ICM) 800 mA
Collector Emitter Voltage (VCE) 40 V
Emitter Base Voltage (VBE) 6 V
DC Current Gain (hFE) 100 to 300
Rise Time (tr) 25 ns
Fall Time (tf) 60 ns
Collector Power Dissipation (PD) 310 mW
Operating and Storage Temperature Range -55 to +150 °C
Package Type SOT-23

Key Features

  • Bi-Polar small signal NPN transistor
  • Epitaxial Planar Die Construction
  • Low Saturation Voltage VCE(sat) < 300mV @ 150mA
  • Complementary PNP Type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device

Applications

  • Driver Modules like Relay Driver, LED driver, etc.
  • Switching loads up to 600mA
  • Motor speed control
  • Inverter and Rectifier circuits
  • Darlington Pair Designs

Q & A

  1. What is the collector current rating of the MMBT2222A transistor?

    The collector current rating of the MMBT2222A transistor is 600mA, with a peak pulse collector current of 800mA.

  2. What is the collector-emitter voltage (VCE) of the MMBT2222A transistor?

    The collector-emitter voltage (VCE) of the MMBT2222A transistor is 40V.

  3. What is the emitter-base voltage (VBE) of the MMBT2222A transistor?

    The emitter-base voltage (VBE) of the MMBT2222A transistor is 6V.

  4. What is the DC current gain (hFE) range of the MMBT2222A transistor?

    The DC current gain (hFE) range of the MMBT2222A transistor is 100 to 300.

  5. What are the rise and fall times of the MMBT2222A transistor?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

  6. What is the collector power dissipation (PD) of the MMBT2222A transistor?

    The collector power dissipation (PD) of the MMBT2222A transistor is 310mW.

  7. What is the operating and storage temperature range of the MMBT2222A transistor?

    The operating and storage temperature range of the MMBT2222A transistor is -55 to +150°C.

  8. What package type is the MMBT2222A transistor available in?

    The MMBT2222A transistor is available in the SOT-23 package type.

  9. Is the MMBT2222A transistor RoHS compliant?

    Yes, the MMBT2222A transistor is totally Lead-Free & Fully RoHS Compliant.

  10. What are some common applications of the MMBT2222A transistor?

    The MMBT2222A transistor is commonly used in driver modules, switching loads, motor speed control, inverter and rectifier circuits, and Darlington Pair Designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.23
2,949

Please send RFQ , we will respond immediately.

Related Product By Categories

2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB

Related Product By Brand

1.5KE120A B0G
1.5KE120A B0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAV99 RFG
BAV99 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAT54CD REG
BAT54CD REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZX585B9V1 RSG
BZX585B9V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BZV55C51 L1G
BZV55C51 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZX84C2V4 RFG
BZX84C2V4 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 300MW SOT23
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35
BZX79C3V9 A0G
BZX79C3V9 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW DO35