MMBT2222A RFG
  • Share:

Taiwan Semiconductor Corporation MMBT2222A RFG

Manufacturer No:
MMBT2222A RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A RFG, produced by Taiwan Semiconductor Corporation, is the SMD (SOT-23) version of the popular 2N2222A transistor. This NPN bipolar transistor is designed for low power switching and amplification applications where space is a constraint. It is widely used in various electronic circuits due to its compact size and robust performance characteristics.

Key Specifications

Parameter Value Unit
Collector Current (IC) 600 mA
Peak Pulse Collector Current (ICM) 800 mA
Collector Emitter Voltage (VCE) 40 V
Emitter Base Voltage (VBE) 6 V
DC Current Gain (hFE) 100 to 300
Rise Time (tr) 25 ns
Fall Time (tf) 60 ns
Collector Power Dissipation (PD) 310 mW
Operating and Storage Temperature Range -55 to +150 °C
Package Type SOT-23

Key Features

  • Bi-Polar small signal NPN transistor
  • Epitaxial Planar Die Construction
  • Low Saturation Voltage VCE(sat) < 300mV @ 150mA
  • Complementary PNP Type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device

Applications

  • Driver Modules like Relay Driver, LED driver, etc.
  • Switching loads up to 600mA
  • Motor speed control
  • Inverter and Rectifier circuits
  • Darlington Pair Designs

Q & A

  1. What is the collector current rating of the MMBT2222A transistor?

    The collector current rating of the MMBT2222A transistor is 600mA, with a peak pulse collector current of 800mA.

  2. What is the collector-emitter voltage (VCE) of the MMBT2222A transistor?

    The collector-emitter voltage (VCE) of the MMBT2222A transistor is 40V.

  3. What is the emitter-base voltage (VBE) of the MMBT2222A transistor?

    The emitter-base voltage (VBE) of the MMBT2222A transistor is 6V.

  4. What is the DC current gain (hFE) range of the MMBT2222A transistor?

    The DC current gain (hFE) range of the MMBT2222A transistor is 100 to 300.

  5. What are the rise and fall times of the MMBT2222A transistor?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

  6. What is the collector power dissipation (PD) of the MMBT2222A transistor?

    The collector power dissipation (PD) of the MMBT2222A transistor is 310mW.

  7. What is the operating and storage temperature range of the MMBT2222A transistor?

    The operating and storage temperature range of the MMBT2222A transistor is -55 to +150°C.

  8. What package type is the MMBT2222A transistor available in?

    The MMBT2222A transistor is available in the SOT-23 package type.

  9. Is the MMBT2222A transistor RoHS compliant?

    Yes, the MMBT2222A transistor is totally Lead-Free & Fully RoHS Compliant.

  10. What are some common applications of the MMBT2222A transistor?

    The MMBT2222A transistor is commonly used in driver modules, switching loads, motor speed control, inverter and rectifier circuits, and Darlington Pair Designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.23
2,949

Please send RFQ , we will respond immediately.

Related Product By Categories

BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
BAS40 RFG
BAS40 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 200MA SOT23
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR160SHR5G
MUR160SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZV55C13 L1G
BZV55C13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZX585B3V0 RKG
BZX585B3V0 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BC817-16 RFG
BC817-16 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323