MMBT2222A RFG
  • Share:

Taiwan Semiconductor Corporation MMBT2222A RFG

Manufacturer No:
MMBT2222A RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A RFG, produced by Taiwan Semiconductor Corporation, is the SMD (SOT-23) version of the popular 2N2222A transistor. This NPN bipolar transistor is designed for low power switching and amplification applications where space is a constraint. It is widely used in various electronic circuits due to its compact size and robust performance characteristics.

Key Specifications

Parameter Value Unit
Collector Current (IC) 600 mA
Peak Pulse Collector Current (ICM) 800 mA
Collector Emitter Voltage (VCE) 40 V
Emitter Base Voltage (VBE) 6 V
DC Current Gain (hFE) 100 to 300
Rise Time (tr) 25 ns
Fall Time (tf) 60 ns
Collector Power Dissipation (PD) 310 mW
Operating and Storage Temperature Range -55 to +150 °C
Package Type SOT-23

Key Features

  • Bi-Polar small signal NPN transistor
  • Epitaxial Planar Die Construction
  • Low Saturation Voltage VCE(sat) < 300mV @ 150mA
  • Complementary PNP Type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device

Applications

  • Driver Modules like Relay Driver, LED driver, etc.
  • Switching loads up to 600mA
  • Motor speed control
  • Inverter and Rectifier circuits
  • Darlington Pair Designs

Q & A

  1. What is the collector current rating of the MMBT2222A transistor?

    The collector current rating of the MMBT2222A transistor is 600mA, with a peak pulse collector current of 800mA.

  2. What is the collector-emitter voltage (VCE) of the MMBT2222A transistor?

    The collector-emitter voltage (VCE) of the MMBT2222A transistor is 40V.

  3. What is the emitter-base voltage (VBE) of the MMBT2222A transistor?

    The emitter-base voltage (VBE) of the MMBT2222A transistor is 6V.

  4. What is the DC current gain (hFE) range of the MMBT2222A transistor?

    The DC current gain (hFE) range of the MMBT2222A transistor is 100 to 300.

  5. What are the rise and fall times of the MMBT2222A transistor?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

  6. What is the collector power dissipation (PD) of the MMBT2222A transistor?

    The collector power dissipation (PD) of the MMBT2222A transistor is 310mW.

  7. What is the operating and storage temperature range of the MMBT2222A transistor?

    The operating and storage temperature range of the MMBT2222A transistor is -55 to +150°C.

  8. What package type is the MMBT2222A transistor available in?

    The MMBT2222A transistor is available in the SOT-23 package type.

  9. Is the MMBT2222A transistor RoHS compliant?

    Yes, the MMBT2222A transistor is totally Lead-Free & Fully RoHS Compliant.

  10. What are some common applications of the MMBT2222A transistor?

    The MMBT2222A transistor is commonly used in driver modules, switching loads, motor speed control, inverter and rectifier circuits, and Darlington Pair Designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.23
2,949

Please send RFQ , we will respond immediately.

Related Product By Categories

BC857W,115
BC857W,115
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP

Related Product By Brand

1.5KE6.8A R0G
1.5KE6.8A R0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
MUR160AHB0G
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZX84C13 RFG
BZX84C13 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 300MW SOT23
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX585B13 RKG
BZX585B13 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35