MMBT2222A RFG
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Taiwan Semiconductor Corporation MMBT2222A RFG

Manufacturer No:
MMBT2222A RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A RFG, produced by Taiwan Semiconductor Corporation, is the SMD (SOT-23) version of the popular 2N2222A transistor. This NPN bipolar transistor is designed for low power switching and amplification applications where space is a constraint. It is widely used in various electronic circuits due to its compact size and robust performance characteristics.

Key Specifications

Parameter Value Unit
Collector Current (IC) 600 mA
Peak Pulse Collector Current (ICM) 800 mA
Collector Emitter Voltage (VCE) 40 V
Emitter Base Voltage (VBE) 6 V
DC Current Gain (hFE) 100 to 300
Rise Time (tr) 25 ns
Fall Time (tf) 60 ns
Collector Power Dissipation (PD) 310 mW
Operating and Storage Temperature Range -55 to +150 °C
Package Type SOT-23

Key Features

  • Bi-Polar small signal NPN transistor
  • Epitaxial Planar Die Construction
  • Low Saturation Voltage VCE(sat) < 300mV @ 150mA
  • Complementary PNP Type: MMBT2907A
  • Ideal for low power amplification and switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device

Applications

  • Driver Modules like Relay Driver, LED driver, etc.
  • Switching loads up to 600mA
  • Motor speed control
  • Inverter and Rectifier circuits
  • Darlington Pair Designs

Q & A

  1. What is the collector current rating of the MMBT2222A transistor?

    The collector current rating of the MMBT2222A transistor is 600mA, with a peak pulse collector current of 800mA.

  2. What is the collector-emitter voltage (VCE) of the MMBT2222A transistor?

    The collector-emitter voltage (VCE) of the MMBT2222A transistor is 40V.

  3. What is the emitter-base voltage (VBE) of the MMBT2222A transistor?

    The emitter-base voltage (VBE) of the MMBT2222A transistor is 6V.

  4. What is the DC current gain (hFE) range of the MMBT2222A transistor?

    The DC current gain (hFE) range of the MMBT2222A transistor is 100 to 300.

  5. What are the rise and fall times of the MMBT2222A transistor?

    The rise time (tr) is 25ns, and the fall time (tf) is 60ns.

  6. What is the collector power dissipation (PD) of the MMBT2222A transistor?

    The collector power dissipation (PD) of the MMBT2222A transistor is 310mW.

  7. What is the operating and storage temperature range of the MMBT2222A transistor?

    The operating and storage temperature range of the MMBT2222A transistor is -55 to +150°C.

  8. What package type is the MMBT2222A transistor available in?

    The MMBT2222A transistor is available in the SOT-23 package type.

  9. Is the MMBT2222A transistor RoHS compliant?

    Yes, the MMBT2222A transistor is totally Lead-Free & Fully RoHS Compliant.

  10. What are some common applications of the MMBT2222A transistor?

    The MMBT2222A transistor is commonly used in driver modules, switching loads, motor speed control, inverter and rectifier circuits, and Darlington Pair Designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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In Stock

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