BC857C RFG
  • Share:

Taiwan Semiconductor Corporation BC857C RFG

Manufacturer No:
BC857C RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857C RFG is a PNP bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. This transistor is part of the BC857 series, known for its low power loss, high efficiency, and suitability for automated placement. The BC857C RFG is packaged in a SOT-23-3 package, which is a small, surface-mount package ideal for compact electronic designs.

The transistor is designed for general-purpose switching and amplification applications, offering a high surge current capability and a wide operating temperature range. It is also RoHS compliant, making it suitable for use in environmentally friendly designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage Vce 45 V
Collector-Base Voltage Vcb 50 V
Emitter-Base Voltage Veb 5 V
Collector Current Ic 0.1 A
Current Gain (hFe) hFe 420 to 800
Operating and Storage Temperature Range Tj, Tstg -55 to 150 °C
Transition Frequency fT 100 MHz
Power Dissipation Pd 200 mW

Key Features

  • Type: PNP Bipolar Junction Transistor
  • Package Type: SOT-23-3
  • Low Power Loss: High efficiency in operation
  • High Surge Current Capability: Suitable for applications requiring high current surges
  • Automated Placement: Ideal for automated assembly lines
  • RoHS Compliant: Lead-free and environmentally friendly
  • Wide Operating Temperature Range: -55°C to 150°C
  • Transition Frequency: 100 MHz

Applications

The BC857C RFG transistor is versatile and can be used in various applications, including:

  • General-Purpose Switching: Suitable for switching circuits where low current and voltage are required.
  • Amplification: Can be used in amplifier circuits due to its high current gain.
  • Automotive Electronics: Given its high surge current capability, it is suitable for automotive applications.
  • Consumer Electronics: Used in various consumer electronic devices requiring low power and high efficiency.

Q & A

  1. What is the collector-emitter voltage (Vce) of the BC857C RFG transistor?

    The collector-emitter voltage (Vce) of the BC857C RFG transistor is 45V.

  2. What is the current gain (hFe) range of the BC857C RFG transistor?

    The current gain (hFe) of the BC857C RFG transistor ranges from 420 to 800.

  3. What is the operating temperature range of the BC857C RFG transistor?

    The operating and storage temperature range of the BC857C RFG transistor is -55°C to 150°C.

  4. Is the BC857C RFG transistor RoHS compliant?
  5. What is the package type of the BC857C RFG transistor?

    The BC857C RFG transistor is packaged in a SOT-23-3 package.

  6. What are some common applications of the BC857C RFG transistor?

    The BC857C RFG transistor is commonly used in general-purpose switching, amplification, automotive electronics, and consumer electronics.

  7. What is the transition frequency (fT) of the BC857C RFG transistor?

    The transition frequency (fT) of the BC857C RFG transistor is 100 MHz.

  8. What is the power dissipation (Pd) of the BC857C RFG transistor?

    The power dissipation (Pd) of the BC857C RFG transistor is 200 mW.

  9. Can the BC857C RFG transistor be used in high surge current applications?
  10. Is the BC857C RFG transistor suitable for automated placement?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.03
251

Please send RFQ , we will respond immediately.

Same Series
BC856A RFG
BC856A RFG
TRANS PNP 65V 0.1A SOT23
BC856B RFG
BC856B RFG
TRANS PNP 65V 0.1A SOT23
BC857B RFG
BC857B RFG
TRANS PNP 45V 0.1A SOT23
BC857C RFG
BC857C RFG
TRANS PNP 45V 0.1A SOT23
BC858A RFG
BC858A RFG
TRANS PNP 30V 0.1A SOT23
BC858B RFG
BC858B RFG
TRANS PNP 30V 0.1A SOT23
BC858C RFG
BC858C RFG
TRANS PNP 30V 0.1A SOT23

Similar Products

Part Number BC857C RFG BC857B RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

Related Product By Categories

BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

1N4007G A0G
1N4007G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55C18 L0G
BZV55C18 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55B30 L0G
BZV55B30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZV55C2V4 L1G
BZV55C2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23