BC856B RFG
  • Share:

Taiwan Semiconductor Corporation BC856B RFG

Manufacturer No:
BC856B RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856B RFG, produced by Taiwan Semiconductor Corporation, is a PNP general-purpose bipolar junction transistor (BJT) designed for low power surface mount applications. It is housed in the SOT-23 package, making it suitable for automated placement and various electronic circuits. This transistor is part of a series that includes the BC856, BC857, and BC858, each with slightly different specifications but sharing common characteristics such as high efficiency and low power loss.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)-65V
Collector-Base Voltage (VCBO)-80V
Emitter-Base Voltage (VEB0)-5.0V
Collector Current (IC) - Continuous100mA
Collector Current (IC) - Peak (1 ms pulse)200mA
Power Dissipation (PD)250mW
DC Current Gain (hFE)200-420-
Collector-Emitter Saturation Voltage (VCE(sat))-0.3 to -0.65V
Base-Emitter Saturation Voltage (VBE(sat))-0.7 to -0.9V
Operating Temperature Range-55 to 150°C

Key Features

  • Low power loss and high efficiency, making it suitable for a wide range of applications.
  • Ideal for automated placement due to its SOT-23 package.
  • High surge current capability, enhancing its reliability in transient conditions.
  • Moisture sensitivity level: level 1, indicating minimal risk during handling and assembly.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.

Applications

The BC856B RFG is versatile and can be used in various general-purpose amplifier applications, including but not limited to:

  • Automotive electronics
  • Consumer electronics
  • Industrial control systems
  • Audio and video equipment
  • Switching and linear amplifiers

Q & A

  1. What is the collector-emitter voltage rating of the BC856B RFG?
    The collector-emitter voltage rating is -65 V.
  2. What is the maximum continuous collector current for the BC856B RFG?
    The maximum continuous collector current is 100 mA.
  3. What is the package type of the BC856B RFG?
    The package type is SOT-23.
  4. Is the BC856B RFG RoHS compliant?
    Yes, the BC856B RFG is RoHS compliant.
  5. What is the operating temperature range of the BC856B RFG?
    The operating temperature range is -55 to 150°C.
  6. What are the key features of the BC856B RFG?
    The key features include low power loss, high efficiency, high surge current capability, and suitability for automated placement.
  7. What are some common applications of the BC856B RFG?
    Common applications include automotive electronics, consumer electronics, industrial control systems, and audio/video equipment.
  8. Is the BC856B RFG AEC-Q101 qualified?
    Yes, the BC856B RFG is AEC-Q101 qualified and PPAP capable.
  9. What is the DC current gain range of the BC856B RFG?
    The DC current gain range is 200-420.
  10. What is the power dissipation rating of the BC856B RFG?
    The power dissipation rating is 250 mW.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.03
4,100

Please send RFQ , we will respond immediately.

Same Series
BC856A RFG
BC856A RFG
TRANS PNP 65V 0.1A SOT23
BC856B RFG
BC856B RFG
TRANS PNP 65V 0.1A SOT23
BC857B RFG
BC857B RFG
TRANS PNP 45V 0.1A SOT23
BC857C RFG
BC857C RFG
TRANS PNP 45V 0.1A SOT23
BC858A RFG
BC858A RFG
TRANS PNP 30V 0.1A SOT23
BC858B RFG
BC858B RFG
TRANS PNP 30V 0.1A SOT23
BC858C RFG
BC858C RFG
TRANS PNP 30V 0.1A SOT23

Similar Products

Part Number BC856B RFG BC856A RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

Related Product By Categories

BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523

Related Product By Brand

BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZV55C3V3 L0G
BZV55C3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55B4V7 L1G
BZV55B4V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX79C5V6 A0G
BZX79C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC850CW RFG
BC850CW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323