MUR1100ERLG
  • Share:

onsemi MUR1100ERLG

Manufacturer No:
MUR1100ERLG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1000V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR1100ERLG is an ultrafast recovery rectifier produced by onsemi, designed for use in switching power supplies, inverters, and as free-wheeling diodes. This component is part of the Ultrafast "E" Series, known for its high reverse energy capability and robust performance in demanding applications.

Key Specifications

Specification Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1000 V
Average Rectified Forward Current (IF(AV)) 1.0 A
Non-Repetitive Peak Surge Current (IFSM) 35 A
Operating Junction Temperature (TJ) -65 to +175 °C
Maximum Instantaneous Forward Voltage (VF) 1.75 V
Maximum Reverse Recovery Time (trr) 75 ns
Avalanche Energy Guaranteed 10 mJ
Case Type Epoxy, Molded
Weight 0.4 gram (approximately)
Lead Temperature for Soldering 260°C Max. for 10 Seconds

Key Features

The MUR1100ERLG features several key attributes that make it suitable for high-performance applications:

  • Ultrafast 75 nanosecond recovery time, ensuring minimal switching losses.
  • Excellent protection against voltage transients in switching inductive load circuits.
  • Low forward voltage and low leakage current, enhancing efficiency and reducing power losses.
  • High temperature glass passivated junction, allowing for reliable operation up to 175°C.
  • Reverse voltage capability up to 1000 volts, providing robust protection against reverse voltage conditions.
  • Corrosion-resistant finish and readily solderable terminal leads.

Applications

The MUR1100ERLG is designed for various high-performance applications, including:

  • Switching power supplies, where its ultrafast recovery time and high reverse voltage capability are crucial.
  • Inverters, where the component's ability to handle high voltage and current transients is essential.
  • Free-wheeling diodes in motor control and power conversion systems, where its low forward voltage and high temperature operation are beneficial.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the MUR1100ERLG?

    1000 volts.

  2. What is the average rectified forward current (IF(AV)) of the MUR1100ERLG?

    1.0 ampere.

  3. What is the maximum non-repetitive peak surge current (IFSM) of the MUR1100ERLG?

    35 amperes.

  4. What is the operating junction temperature range of the MUR1100ERLG?

    -65 to +175°C.

  5. What is the maximum instantaneous forward voltage (VF) of the MUR1100ERLG?

    1.75 volts.

  6. What is the maximum reverse recovery time (trr) of the MUR1100ERLG?

    75 nanoseconds.

  7. What is the avalanche energy guaranteed for the MUR1100ERLG?

    10 millijoules.

  8. What type of case is used for the MUR1100ERLG?

    Epoxy, molded.

  9. What is the weight of the MUR1100ERLG?

    Approximately 0.4 grams.

  10. What is the lead temperature for soldering purposes?

    260°C maximum for 10 seconds.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:10 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.60
477

Please send RFQ , we will respond immediately.

Same Series
MUR1100ERLG
MUR1100ERLG
DIODE GEN PURP 1000V 1A AXIAL
MUR1100EG
MUR1100EG
DIODE GEN PURP 1000V 1A AXIAL
MUR180ERLG
MUR180ERLG
DIODE GEN PURP 800V 1A AXIAL
MUR180E
MUR180E
DIODE GEN PURP 800V 1A AXIAL
MUR1100ERL
MUR1100ERL
DIODE GEN PURP 1KV 1A AXIAL

Similar Products

Part Number MUR1100ERLG MUR1100ERL
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A 1.75 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V 10 µA @ 1000 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK