NRVTSA3100ET3G
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onsemi NRVTSA3100ET3G

Manufacturer No:
NRVTSA3100ET3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 3A 100V SMA-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTSA3100ET3G from onsemi is a trench-based Schottky rectifier that offers very low forward voltage and low leakage characteristics. This device is designed using fine lithography trench-based Schottky technology, which ensures exceptional temperature stability and fast switching capabilities. It is particularly suited for applications requiring high efficiency and regulatory compliance.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (TL = 134°C) IF(AV) 3.0 A
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 127°C) IFRM 6.0 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage Temperature Range Tstg -65 to +175 °C
Operating Junction Temperature TJ -55 to +175 °C
ESD Rating (Human Body Model) 1A >1000 V
Maximum Thermal Resistance, Steady State (Junction-to-Lead) RθJL 22 °C/W
Maximum Thermal Resistance, Steady State (Junction-to-Ambient) RθJA 80 °C/W
Instantaneous Forward Voltage (iF = 1.0 Amps, TJ = 25°C) vF 0.61 V
Reverse Current (Rated dc Voltage, TJ = 25°C) iR 0.90 μA μA
Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd 14.3 pF

Key Features

  • Fine lithography trench-based Schottky technology for very low forward voltage and low leakage.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • High surge capability.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Pb-free and halide-free devices.

Applications

  • Switching power supplies including wireless, smartphone, and notebook adapters.
  • High frequency and DC-DC converters.
  • Freewheeling and OR-ing diodes.
  • Reverse battery protection.
  • Instrumentation.
  • LED lighting, including automotive LED lighting.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVTSA3100ET3G?

    The peak repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average rectified forward current of the NRVTSA3100ET3G at TL = 134°C?

    The average rectified forward current (IF(AV)) is 3.0 A at TL = 134°C.

  3. What is the non-repetitive peak surge current of the NRVTSA3100ET3G?

    The non-repetitive peak surge current (IFSM) is 50 A.

  4. What is the operating junction temperature range of the NRVTSA3100ET3G?

    The operating junction temperature (TJ) range is -55 to +175°C.

  5. What is the ESD rating of the NRVTSA3100ET3G according to the Human Body Model?

    The ESD rating is >1000 V according to the Human Body Model.

  6. What is the typical instantaneous forward voltage of the NRVTSA3100ET3G at 1.0 A and 25°C?

    The typical instantaneous forward voltage (vF) is 0.61 V at 1.0 A and 25°C.

  7. Is the NRVTSA3100ET3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  8. What are the typical applications of the NRVTSA3100ET3G?

    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, and LED lighting.

  9. Is the NRVTSA3100ET3G Pb-free and halide-free?

    Yes, the device is Pb-free and halide-free.

  10. What is the package type of the NRVTSA3100ET3G?

    The device is packaged in an SMA (Small Outline, Molded) case.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:995 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:14.3pF @ 100V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number NRVTSA3100ET3G NRVTSA4100ET3G NRVTSS3100ET3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 3A 4A 3A
Voltage - Forward (Vf) (Max) @ If 995 mV @ 3 A 680 mV @ 4 A 995 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 9 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 14.3pF @ 100V, 1MHz 55pF @ 4V, 1MHz 14.4pF @ 100V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AA, SMB
Supplier Device Package SMA SMA SMB
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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