NRVTSS3100ET3G
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onsemi NRVTSS3100ET3G

Manufacturer No:
NRVTSS3100ET3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
3A 100V LOW VF TRENCH RECTIFIER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTSS3100E is a Low Leakage Trench-based Schottky Rectifier produced by onsemi. This device utilizes fine lithography trench-based Schottky technology, which enables a very low forward voltage drop without the high reverse leakage trade-off commonly seen in planar Schottky rectifiers. It offers stable switching characteristics over a wide temperature range, making it an ideal output rectifier for switching power supplies.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (TL = 142°C) IF(AV) 3.0 A
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 135°C) IFRM 6 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 90 A
Storage Temperature Range Tstg -65 to +175 °C
Operating Junction Temperature TJ -55 to +175 °C
ESD Rating (Human Body Model) 1B
Instantaneous Forward Voltage (iF = 3.0 Amps, TJ = 25°C) vF 0.88 V
Reverse Current (Rated dc Voltage, TJ = 25°C) iR 0.9 µA
Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd 14.4 pF
Thermal Resistance, Junction-to-Lead, Steady State RθJL 17.5 °C/W
Thermal Resistance, Junction-to-Ambient, Steady State RθJA 90 °C/W

Key Features

  • Fine Lithography Trench-based Schottky Technology for Very Low Forward Voltage and Low Leakage
  • Fast Switching with Exceptional Temperature Stability
  • Low Power Loss and Lower Operating Temperature
  • Higher Efficiency for Achieving Regulatory Compliance
  • High Surge Capability
  • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and Halide-Free Devices

Applications

  • Switching Power Supplies including Wireless, Smartphone and Notebook Adapters
  • High Frequency and DC-DC Converters
  • Freewheeling and OR-ing diodes
  • Reverse Battery Protection
  • Instrumentation
  • LED Lighting

Q & A

  1. What is the peak repetitive reverse voltage of the NRVTSS3100E?

    The peak repetitive reverse voltage (VRRM) is 100 V.

  2. What is the average rectified forward current of the NRVTSS3100E at TL = 142°C?

    The average rectified forward current (IF(AV)) is 3.0 A at TL = 142°C.

  3. What is the non-repetitive peak surge current of the NRVTSS3100E?

    The non-repetitive peak surge current (IFSM) is 90 A.

  4. What is the operating junction temperature range of the NRVTSS3100E?

    The operating junction temperature range is -55 to +175°C.

  5. What is the instantaneous forward voltage of the NRVTSS3100E at iF = 3.0 Amps and TJ = 25°C?

    The instantaneous forward voltage (vF) is 0.88 V at iF = 3.0 Amps and TJ = 25°C.

  6. What is the reverse current of the NRVTSS3100E at rated dc voltage and TJ = 25°C?

    The reverse current (iR) is 0.9 µA at rated dc voltage and TJ = 25°C.

  7. What is the diode capacitance of the NRVTSS3100E at rated dc voltage, TJ = 25°C, and f = 1 MHz?

    The diode capacitance (Cd) is 14.4 pF at rated dc voltage, TJ = 25°C, and f = 1 MHz.

  8. What are the typical applications of the NRVTSS3100E?

    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, and LED lighting.

  9. Is the NRVTSS3100E suitable for automotive applications?
  10. Are the NRVTSS3100E devices Pb-Free and Halide-Free?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:995 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:14.4pF @ 100V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number NRVTSS3100ET3G NRVTSS5100ET3G NRVTSA3100ET3G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 3A 5A 3A
Voltage - Forward (Vf) (Max) @ If 995 mV @ 3 A 690 mV @ 5 A 995 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 µA @ 100 V 29 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 14.4pF @ 100V, 1MHz 54.4pF @ 100V, 1MHz 14.3pF @ 100V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AC, SMA
Supplier Device Package SMB SMB SMA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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