Overview
The NRVTSS3100E is a Low Leakage Trench-based Schottky Rectifier produced by onsemi. This device utilizes fine lithography trench-based Schottky technology, which enables a very low forward voltage drop without the high reverse leakage trade-off commonly seen in planar Schottky rectifiers. It offers stable switching characteristics over a wide temperature range, making it an ideal output rectifier for switching power supplies.
Key Specifications
Rating | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 100 | V |
Average Rectified Forward Current (TL = 142°C) | IF(AV) | 3.0 | A |
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 135°C) | IFRM | 6 | A |
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 90 | A |
Storage Temperature Range | Tstg | -65 to +175 | °C |
Operating Junction Temperature | TJ | -55 to +175 | °C |
ESD Rating (Human Body Model) | 1B | ||
Instantaneous Forward Voltage (iF = 3.0 Amps, TJ = 25°C) | vF | 0.88 | V |
Reverse Current (Rated dc Voltage, TJ = 25°C) | iR | 0.9 µA | |
Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) | Cd | 14.4 pF | |
Thermal Resistance, Junction-to-Lead, Steady State | RθJL | 17.5 °C/W | |
Thermal Resistance, Junction-to-Ambient, Steady State | RθJA | 90 °C/W |
Key Features
- Fine Lithography Trench-based Schottky Technology for Very Low Forward Voltage and Low Leakage
- Fast Switching with Exceptional Temperature Stability
- Low Power Loss and Lower Operating Temperature
- Higher Efficiency for Achieving Regulatory Compliance
- High Surge Capability
- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free and Halide-Free Devices
Applications
- Switching Power Supplies including Wireless, Smartphone and Notebook Adapters
- High Frequency and DC-DC Converters
- Freewheeling and OR-ing diodes
- Reverse Battery Protection
- Instrumentation
- LED Lighting
Q & A
- What is the peak repetitive reverse voltage of the NRVTSS3100E?
The peak repetitive reverse voltage (VRRM) is 100 V.
- What is the average rectified forward current of the NRVTSS3100E at TL = 142°C?
The average rectified forward current (IF(AV)) is 3.0 A at TL = 142°C.
- What is the non-repetitive peak surge current of the NRVTSS3100E?
The non-repetitive peak surge current (IFSM) is 90 A.
- What is the operating junction temperature range of the NRVTSS3100E?
The operating junction temperature range is -55 to +175°C.
- What is the instantaneous forward voltage of the NRVTSS3100E at iF = 3.0 Amps and TJ = 25°C?
The instantaneous forward voltage (vF) is 0.88 V at iF = 3.0 Amps and TJ = 25°C.
- What is the reverse current of the NRVTSS3100E at rated dc voltage and TJ = 25°C?
The reverse current (iR) is 0.9 µA at rated dc voltage and TJ = 25°C.
- What is the diode capacitance of the NRVTSS3100E at rated dc voltage, TJ = 25°C, and f = 1 MHz?
The diode capacitance (Cd) is 14.4 pF at rated dc voltage, TJ = 25°C, and f = 1 MHz.
- What are the typical applications of the NRVTSS3100E?
Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, and LED lighting.
- Is the NRVTSS3100E suitable for automotive applications?
- Are the NRVTSS3100E devices Pb-Free and Halide-Free?