Overview
The NRVTSS5100ET3G is a Trench Schottky rectifier produced by ON Semiconductor. This device is designed to offer fast switching performance, exceptional temperature stability, and very low leakage, making it suitable for a variety of applications where high efficiency and reliability are crucial. The rectifier features fine lithography trench-based Schottky technology, which ensures low forward voltage and minimal power loss. It is also AEC-Q101 qualified and PPAP capable, making it ideal for automotive and other demanding applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Average Rectified Forward Current (TL = 100°C) | IF(AV) | 5.0 | A |
| Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 83°C) | IFRM | 10 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 50 | A |
| Storage Temperature Range | Tstg | −65 to +175 | °C |
| Operating Junction Temperature | TJ | −55 to +175 | °C |
| Instantaneous Forward Voltage (iF = 5 A, TJ = 25°C) | vF | 0.65 | V |
| Reverse Current (Rated dc Voltage, TJ = 25°C) | iR | 2.6 μA | μA |
| Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) | Cd | 54.4 pF | pF |
| Thermal Resistance, Junction-to-Ambient | RθJA | 71.1 °C/W | °C/W |
Key Features
- Fine lithography trench-based Schottky technology for very low forward voltage and low leakage.
- Fast switching with exceptional temperature stability.
- Low power loss and lower operating temperature for higher efficiency.
- High surge capability.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halide-free, and RoHS compliant.
- Compact epoxy package with a lead finish of 100% matte Sn (tin).
Applications
- Switching power supplies, including wireless, smartphone, and notebook adapters.
- High frequency and DC-DC converters.
- Freewheeling and OR-ing diodes.
- Reverse battery protection.
- Instrumentation.
- LED lighting.
Q & A
- What is the peak repetitive reverse voltage of the NRVTSS5100ET3G? The peak repetitive reverse voltage is 100 V.
- What is the average rectified forward current at 100°C? The average rectified forward current is 5.0 A.
- What is the non-repetitive peak surge current? The non-repetitive peak surge current is 50 A.
- What is the operating junction temperature range? The operating junction temperature range is −55 to +175°C.
- Is the NRVTSS5100ET3G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the thermal resistance, junction-to-ambient? The thermal resistance, junction-to-ambient, is 71.1 °C/W.
- What are the typical applications of the NRVTSS5100ET3G? Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, and LED lighting.
- Is the device Pb-free and RoHS compliant? Yes, the device is Pb-free, halide-free, and RoHS compliant.
- What is the instantaneous forward voltage at 5 A and 25°C? The instantaneous forward voltage at 5 A and 25°C is 0.65 V.
- What is the diode capacitance at 25°C and 1 MHz? The diode capacitance is 54.4 pF.
