Overview
The MJD3055T4 is a silicon NPN bipolar junction transistor manufactured by STMicroelectronics. This transistor is designed for high-performance applications, featuring exceptional high gain and very low saturation voltage. It is part of the MJD2955 and MJD3055 complementary PNP-NPN pairs, making it suitable for a variety of general-purpose switching and amplifier applications. The device is manufactured using planar technology with a “base island” layout, ensuring cost-effective performance.
Key Specifications
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCBO | Collector-Base Voltage (IE = 0) | 70 | V |
| VCEO | Collector-Emitter Voltage (IB = 0) | 60 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |
| IC | Collector Current | 10 | A |
| IB | Base Current | 6 | A |
| PTOT | Total Power Dissipation at Tc = 25°C | 20 | W |
| Tstg | Storage Temperature Range | -65 to 150 | °C |
| Tj | Maximum Operating Junction Temperature | 150 | °C |
| RthJC | Thermal Resistance, Junction-to-Case | 6.25 | °C/W |
| RthJA | Thermal Resistance, Junction-to-Ambient | 100 | °C/W |
| VCE(sat) | Collector-Emitter Saturation Voltage | 1.1 V (IC = 4 A, IB = 0.4 A), 8 V (IC = 10 A, IB = 3.3 A) | V |
| VBE(on) | Base-Emitter Voltage | 1.8 V (IC = 4 A, VCE = 4 V) | V |
| hFE | DC Current Gain | 20 to 100 (IC = 4 A, VCE = 4 V), 5 (IC = 10 A, VCE = 4 V) | |
| fT | Transition Frequency | 2 MHz (IC = 0.5 A, VCE = 10 V, f = 500 kHz) |
Key Features
- High Gain Performance: The MJD3055T4 exhibits exceptional high gain performance, making it suitable for amplifier applications.
- Low Saturation Voltage: It features very low collector-emitter saturation voltage, enhancing its efficiency in switching and amplifier roles.
- Surface-Mounting Package: The transistor is housed in a DPAK (TO-252) power package, available in tape and reel, which is convenient for surface-mounting applications.
- Complementary Pair: The MJD3055T4 forms a complementary pair with the MJD2955, providing a complete solution for various circuit designs.
- High Current and Voltage Ratings: With a collector current of up to 10 A and collector-emitter voltage of up to 60 V, it is suitable for high-power applications.
- Wide Operating Temperature Range: The device can operate over a storage temperature range of -65 to 150°C and a maximum junction temperature of 150°C.
Applications
- General Purpose Switching: The MJD3055T4 is ideal for general-purpose switching applications due to its high gain and low saturation voltage.
- Amplifier Applications: It is well-suited for amplifier circuits, including audio amplifiers and other signal amplification needs.
- Power Management: Its high current and voltage ratings make it suitable for power management circuits in various electronic devices.
- Automotive and Industrial Systems: The transistor can be used in automotive and industrial systems where high reliability and performance are required.
Q & A
- What is the maximum collector current of the MJD3055T4?
The maximum collector current is 10 A.
- What is the collector-emitter voltage rating of the MJD3055T4?
The collector-emitter voltage rating is 60 V.
- What is the typical base-emitter voltage of the MJD3055T4?
The typical base-emitter voltage is 1.8 V at IC = 4 A and VCE = 4 V.
- What is the transition frequency of the MJD3055T4?
The transition frequency is 2 MHz at IC = 0.5 A, VCE = 10 V, and f = 500 kHz.
- What is the thermal resistance, junction-to-case, of the MJD3055T4?
The thermal resistance, junction-to-case, is 6.25 °C/W.
- What is the storage temperature range of the MJD3055T4?
The storage temperature range is -65 to 150 °C.
- What type of package does the MJD3055T4 come in?
The MJD3055T4 comes in a DPAK (TO-252) power package, available in tape and reel.
- Is the MJD3055T4 part of a complementary pair?
Yes, the MJD3055T4 forms a complementary pair with the MJD2955.
- What are the typical applications of the MJD3055T4?
The MJD3055T4 is typically used in general-purpose switching and amplifier applications.
- What is the maximum operating junction temperature of the MJD3055T4?
The maximum operating junction temperature is 150 °C.
